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    • 93. 发明授权
    • Method and apparatus for providing parallel optoelectronic communication with an electronic device
    • 用于提供与电子设备的平行光电通信的方法和设备
    • US06955481B2
    • 2005-10-18
    • US10667234
    • 2003-09-17
    • Evan G. ColganBruce K. FurmanDaniel J. Stigliani, Jr.
    • Evan G. ColganBruce K. FurmanDaniel J. Stigliani, Jr.
    • G02B6/42G02B6/36
    • G02B6/4214G02B6/4246G02B6/4249
    • An optoelectronic assembly for an electronic system includes a support electronic chip set configured for at least one of providing multiplexing, demultiplexing, coding, decoding and optoelectronic transducer driving and receive functions. A first substrate having a first surface and an opposite second surface is in communication with the support electronic chip set via the first surface while a second substrate is in communication with the second surface of the first substrate. The second substrate is configured for mounting at least one of data processing, data switching and data storage chips. An optoelectronic transducer is in signal communication with the support electronic chip set and an optical fiber array is aligned at a first end with the optoelectronic transducer and with an optical signaling medium at a second end. An electrical signal from the support electronic chip set is communicated to the optoelectronic transducer via an electrical signaling medium, and the support electronic chip set and the optoelectronic transducer share a common thermal path for cooling.
    • 一种用于电子系统的光电组件,包括配置用于提供多路复用,解复用,编码,解码和光电换能器驱动和接收功能中的至少一个的支持电子芯片组。 具有第一表面和相对的第二表面的第一基板经由第一表面与支撑电子芯片组连通,而第二基板与第一基板的第二表面连通。 第二基板被配置用于安装数据处理,数据交换和数据存储芯片中的至少一个。 光电子传感器与支撑电子芯片组进行信号通信,光纤阵列在第一端与光电转换器对准,并在第二端与光信号介质对准。 来自支持电子芯片组的电信号通过电信号介质传送到光电转换器,并且支持电子芯片组和光电转换器共享用于冷却的公共热路径。
    • 95. 发明授权
    • Self-aligned structures for improved wide viewing angle for liquid crystal displays
    • 自对准结构,用于改善液晶显示器的广视角
    • US06256080B1
    • 2001-07-03
    • US09339262
    • 1999-06-23
    • Evan G. ColganShui-Chih A. LienKai R. Schleupen
    • Evan G. ColganShui-Chih A. LienKai R. Schleupen
    • G02F11337
    • G02F1/133753G02F1/133512G02F1/133707
    • In accordance with the present invention, a liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. The light absorbent material includes a portion disposed within a pixel area. A conductive layer is formed on the light absorbent material for forming a first transparent electrode. A second electrode is spaced apart from the first electrode by a gap. The gap includes liquid crystal. A ridge or a trench is formed in the pixel area and projects into the liquid crystal. The ridge or trench is self-aligned to the portions of the light absorbent material in the pixel area. The first electrode and the second electrode provide an electric field therebetween wherein the ridge or trench provides pretilt control for the liquid crystal to provide an improved wide viewing angle and the portions of the light absorbent material absorb light leaked from the ridge. Other embodiments for active and passive displays are included as well as a method for employing the invention.
    • 根据本发明,液晶显示单元包括具有图案化的吸光材料的第一基板。 吸光材料包括设置在像素区域内的部分。 在用于形成第一透明电极的光吸收材料上形成导电层。 第二电极通过间隙与第一电极间隔开。 间隙包括液晶。 在像素区域中形成脊或沟槽并突出到液晶中。 脊或沟槽与像素区域中的光吸收材料的部分自对准。 第一电极和第二电极在其间提供电场,其中脊或沟槽为液晶提供预先控制以提供改进的宽视角,并且光吸收材料的部分吸收从脊部泄漏的光。 包括有源和无源显示器的其它实施例以及采用本发明的方法。
    • 97. 发明授权
    • Self-aligned process for capping copper lines
    • 自动对线加工铜线
    • US5310602A
    • 1994-05-10
    • US960627
    • 1992-10-13
    • Jian LiJames W. MayerEvan G. ColganJeffrey P. Gambino
    • Jian LiJames W. MayerEvan G. ColganJeffrey P. Gambino
    • H01L21/768H01L23/532B32B9/00
    • H01L21/76858H01L21/76838H01L21/76852H01L21/76856H01L21/76867H01L21/76886H01L23/53233H01L23/53238H01L2924/0002Y10T428/238Y10T428/239Y10T428/24917
    • The present invention features a process and a resulting article in which copper-based multilevel interconnects are fabricated. The copper-based multilevel interconnect formed by the inventive process first includes the process step of depositing a pattern of copper lines upon or in an applicable substrate, such as silicon dioxide. The copper lines are approximately one micron thick. The lines are coated with approximately 50 to 100 nm of titanium by sputter deposition, and undergo subsequent annealing at approximately 300.degree. C. to 400.degree. C. in an argon ambient. The titanium and copper layers are annealed to provide a Cu.sub.3 Ti alloy at the copper/titanium junction. The unreacted titanium between the copper features is then stripped away by dry etching with fluorine-based etch. The remaining Cu.sub.3 Ti alloy is subsequently transformed into TiN(O) and copper by a rapid thermal annealing in an NH.sub.3 atmosphere at an approximate temperature of below 650.degree. C., and then usually at temperatures ranging from between 550.degree. C. to 650.degree. C. for approximately five minutes. The copper lines are thereby capped with a layer of TiN(O), since oxygen is incorporated into the TiN layer during the heat treatment. The TiN(O) layer is more effective as a diffusion barrier than is TiN.
    • 本发明的特征在于制造铜基多层互连的工艺和所得到的制品。 由本发明的方法形成的基于铜的多层互连首先包括将铜线图案沉积在诸如二氧化硅之类的适用基底上或其中的工艺步骤。 铜线约为1微米厚。 线通过溅射沉积涂覆有约50至100nm的钛,并在氩气氛围中在约300℃至400℃下进行随后的退火。 对钛和铜层进行退火以在铜/钛结处提供Cu 3 Ti合金。 然后通过用氟基蚀刻的干蚀刻剥离铜特征之间的未反应的钛。 剩余的Cu3Ti合金随后在NH3气氛中在大约650℃左右的快速热退火下转化成TiN(O)和铜,然后通常在550℃至650℃的温度范围内 约五分钟。 因此,铜线由TiN(O)层覆盖,因为在热处理期间氧被并入到TiN层中。 作为扩散阻挡层,TiN(O)层比TiN更有效。