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91. 发明申请

US20060009034A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060009034A1
公开(公告)日：2006-01-12
申请号：US11038592
申请日：2005-01-19
申请人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
发明人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

92. 发明申请

US20050287807A1 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US20050287807A1
公开(公告)日：2005-12-29
申请号：US11206491
申请日：2005-08-18
申请人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
发明人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

93. 发明授权

US06916398B2 Gas delivery apparatus and method for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US06916398B2
公开(公告)日：2005-07-12
申请号：US10032284
申请日：2001-12-21
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：气体输送组件的一个实施例包括覆盖构件，该覆盖构件在覆盖构件的中心部分处具有扩张通道，并且具有从膨胀通道延伸到覆盖构件的周边部分的底面。一个或多个气体导管联接到膨胀通道，在该扩张通道中，一个或多个气体导管与扩张通道的中心成一角度定位。室的一个实施例包括具有基板接收表面的基板支撑件。该腔室还包括腔室盖，该室盖具有在腔室盖的中心部分处的通道和从通道延伸到腔室盖的周边部分的锥形底面。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。在一个方面，室盖的底表面可以是锥形的。在另一方面，限定在室盖和基板接收表面之间的反应区域可以包括小体积。在另一方面，通道可以包括从腔室盖的中心部分延伸的锥形扩张通道。腔室的另一实施例包括具有基底接收表面的基底支撑件。腔室还包括腔室盖，其具有从腔室盖的中心部分延伸的膨胀通道，并且具有从膨胀通道延伸到腔室盖的周边部分的锥形底面。一个或多个气体管道设置在扩张通道的上部周围，其中一个或多个气体管道以与扩张通道的中心成一定角度设置。扼流圈设置在邻近锥形底面的周边的腔室盖上。

94. 发明申请

US20050059241A1 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US20050059241A1
公开(公告)日：2005-03-17
申请号：US10951354
申请日：2004-09-29
申请人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

95. 发明授权

US06772072B2 Method and apparatus for monitoring solid precursor delivery 有权
公开(公告)号：US06772072B2
公开(公告)日：2004-08-03
申请号：US10200613
申请日：2002-07-22
申请人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
发明人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
IPC分类号： G06F1900
CPC分类号： C23C16/52 , C23C16/4481
摘要： A method and apparatus for monitoring the delivery of a solid precursor from a vessel to a process chamber via a process gas produced by flowing a carrier gas into the vessel is provided. The precursor typically changes state from a solid to a gas (vapor) through a sublimation process within the chamber. The apparatus comprises a gas analyzer to generate a first signal indicative of a density of the precursor in the process gas and a controller. The controller receives the first signal and a second signal indicative of a volume flow rate of the process gas or the carrier gas and calculates a mass flow rate and/or a total amount consumed of the precursor based on the first and second signals. The controller may calculate an amount precursor remaining in the vessel based on the total amount consumed and an initial amount. The amount of precursor remaining in the vessel may be used by an operator to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.

96. 发明授权

US06551929B1 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 有权
$Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques$
标题翻译：使用原子层沉积和化学气相沉积技术沉积难熔金属层的分叉沉积工艺
公开(公告)号：US06551929B1
公开(公告)日：2003-04-22
申请号：US09605593
申请日：2000-06-28
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统具有分叉沉积工艺，其包括使用ALD技术使衬底成核，以将衬底串行地暴露于第一和第二反应气体，然后使用邻近成核层的本体层，使用同时将成核层暴露于第一和第二气体的CVD技术。

97. 发明授权

US08626330B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08626330B2
公开(公告)日：2014-01-07
申请号：US13235855
申请日：2011-09-19
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

98. 发明授权

US08293647B2 Bottom up plating by organic surface passivation and differential plating retardation 失效
标题翻译：通过有机表面钝化和差分电镀延迟向下电镀
公开(公告)号：US08293647B2
公开(公告)日：2012-10-23
申请号：US12620818
申请日：2009-11-18
申请人： Jenn-Yue Wang , Hua Chung , Rong Tao , Hong Zhang
发明人： Jenn-Yue Wang , Hua Chung , Rong Tao , Hong Zhang
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , C25D5/022 , C25D5/10 , H01L21/2885 , H01L21/321 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。一个实施例提供了一种提供用于处理衬底的方法的方法，包括在其上形成有沟槽或通孔结构的衬底上形成晶种层，用有机钝化膜涂覆种子层的一部分，以及将沟槽或通孔结构浸入电镀溶液以在未被有机钝化膜覆盖的种子层上沉积导电材料。

99. 发明申请

US20120234238A1 INTEGRATED METROLOGY FOR WAFER SCREENING 审中-公开
标题翻译：用于筛选筛选的综合方程
公开(公告)号：US20120234238A1
公开(公告)日：2012-09-20
申请号：US13419121
申请日：2012-03-13
申请人： Wei-Yung Hsu , Hua Chung , Ting-Ruei Shiu , Jie Cui
发明人： Wei-Yung Hsu , Hua Chung , Ting-Ruei Shiu , Jie Cui
IPC分类号： C23C16/52 , G01N3/00
CPC分类号： G01N3/20 , G01N3/068 , G01N3/12 , G01N2203/0282 , H01L21/67109 , H01L21/67115 , H01L21/67207 , H01L21/67288 , H01L21/67754 , H01L21/68764 , H01L21/68771
摘要： Integrated wafer or substrate bow measurement modules are described. For example, a multi-chamber system includes a chamber housing a bow measurement module. In another example, a method of pre-screening a wafer includes inserting a wafer or a substrate into a multi-chamber system. A bow parameter of the wafer or the substrate is measured in a bow measurement module housed in a chamber of the multi-chamber system.
摘要翻译：描述了集成的晶片或衬底弓测量模块。例如，多室系统包括容纳弓测量模块的腔室。在另一示例中，预筛选晶片的方法包括将晶片或基板插入多室系统中。在容纳在多室系统的室中的弓测量模块中测量晶片或基板的弓形参数。

100. 发明申请

US20120175245A1 GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS 审中-公开
标题翻译：相变材料的GAP填充改进方法
公开(公告)号：US20120175245A1
公开(公告)日：2012-07-12
申请号：US13422671
申请日：2012-03-16
申请人： Mengqi Ye , Hua Chung , Goichi Yoshidome , Philip Fulmer
发明人： Mengqi Ye , Hua Chung , Goichi Yoshidome , Philip Fulmer
IPC分类号： C23C14/34
CPC分类号： C23C14/358 , C23C14/046 , C23C14/0623 , C23C14/345 , C23C14/3485 , H01J37/321 , H01J37/32706 , H01J37/3408 , H01J37/347
摘要： Methods and apparatus are provided for depositing phase-change materials. In one embodiment, a method is provided for processing a substrate including positioning a substrate in a processing chamber having a phase change material-based target coupled to a first power source, one or more coils coupled to a second power source, a substrate support coupled to a third power source, providing a processing gas to the processing chamber, biasing the phase change material-based target with continuous DC or pulsed DC power, applying power to the coils to generate an inductively coupled plasma, applying a bias to the substrate support, sputtering material from the target, ionizing the sputtered materials, and depositing the sputtered materials on the substrate surface.
摘要翻译：提供了用于沉积相变材料的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括将衬底定位在处理室中，所述处理室具有耦合到第一电源的相变材料基靶，耦合到第二电源的一个或多个线圈，向处理室提供处理气体，以连续DC或脉冲DC功率偏置基于相变材料的靶，向线圈施加电力以产生电感耦合等离子体，向衬底支撑件施加偏压，从目标溅射材料，电离溅射的材料，以及将溅射的材料沉积在衬底表面上。

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