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1. 发明申请

US20060009034A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060009034A1
公开(公告)日：2006-01-12
申请号：US11038592
申请日：2005-01-19
申请人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
发明人： Ken Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung , Jeong Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

2. 发明授权

US07745333B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07745333B2
公开(公告)日：2010-06-29
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

3. 发明申请

US20080280438A1 METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES 有权
标题翻译：沉积原子层沉积技术的沉积层的方法
公开(公告)号：US20080280438A1
公开(公告)日：2008-11-13
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Aygerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

4. 发明授权

US07405158B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07405158B2
公开(公告)日：2008-07-29
申请号：US11038592
申请日：2005-01-19
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Averginos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Averginos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

5. 发明申请

US20060040052A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 审中-公开
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060040052A1
公开(公告)日：2006-02-23
申请号：US10418728
申请日：2003-04-18
申请人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
发明人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要翻译：提供了在基板表面上形成钨层的方法。在一个方面，该方法包括将衬底表面定位在处理室中并将衬底表面暴露于浸泡。然后通过交替地脉冲选择由硅烷，乙硅烷，二氯硅烷及其衍生物组成的组中的含钨化合物和还原气体，在相同的处理室中的基底表面上沉积成核层。然后可以使用循环沉积，化学气相沉积或物理气相沉积技术在成核层上沉积钨体层。

6. 发明授权

US08893536B2 Rekeyable lock cylinder 有权
标题翻译：可锁紧锁芯
公开(公告)号：US08893536B2
公开(公告)日：2014-11-25
申请号：US12651271
申请日：2009-12-31
申请人： Chao-Ming Huang , Chi-Ming Chen
发明人： Chao-Ming Huang , Chi-Ming Chen
IPC分类号： E05B29/04 , E05B27/04 , E05B27/00 , E05B29/00
CPC分类号： E05B27/005 , E05B29/004 , Y10T70/7463 , Y10T70/7599 , Y10T70/7734 , Y10T70/774
摘要： A rekeyable lock cylinder comprises a cylinder body, a plug assembly disposed within the cylinder body and an operation error preventing unit. The cylinder body has a plurality of upper pin holes and an accommodating hole. The plug assembly comprises a plug body, a plurality of assembled rack components and a position block disposed within the plug body. The plug body has an outside wall, a keyhole, a plurality of lower pin holes and a first hole in communication with the outside wall and the keyhole. The assembled rack components are disposed at each of the lower pin holes of the plug body respectively. The operation error preventing unit comprises a first movable member disposed at the accommodating hole of the cylinder body and a second movable member disposed at the first hole of the plug body, and the first movable member may contact against the second movable member.
摘要翻译：可重新锁定的锁芯包括缸体，设置在缸体内的插头组件和操作错误防止单元。缸体具有多个上销孔和容纳孔。插头组件包括插头主体，多个组装的支架部件和设置在插头主体内的位置块。插头体具有与外壁和锁孔连通的外壁，锁孔，多个下销孔和第一孔。组装的齿条部件分别设置在塞体的每个下销孔处。操作错误防止单元包括设置在缸体的容纳孔处的第一可动构件和设置在塞体的第一孔处的第二可动构件，第一可动构件可以抵靠第二可动构件。

7. 发明申请

US20110271724A1 LOCK CYLINDER ASSEMBLY 审中-公开
标题翻译：液压缸组件
公开(公告)号：US20110271724A1
公开(公告)日：2011-11-10
申请号：US13188864
申请日：2011-07-22
申请人： Chao-Ming Huang , Chi-Ming Chen
发明人： Chao-Ming Huang , Chi-Ming Chen
IPC分类号： E05B27/02
CPC分类号： E05B27/00 , E05B27/0032 , E05B27/0042 , E05B27/0057 , E05B27/08 , Y10T70/7605
摘要： A lock cylinder assembly comprises a cylinder body, a plug, a plurality of pin sets and a position block, wherein the plug comprising a keyhole is rotatable within the cylinder body between a locked position and an unlocked position, the pin sets enable the plug disposed relative to the cylinder body to change state between a non-interference state and an interference state, the position block enables the plug disposed relative to the cylinder body to change state between the non-interference state and the interference state, and at least one of the pin sets and the position block is situated in the interference state to disable the lock cylinder from the locked position without a matched key in the keyhole.
摘要翻译：锁芯组件包括圆柱体，插头，多个销组和位置块，其中包括锁眼的插头可在锁定位置和解锁位置之间在所述缸体内旋转，所述销组使所述插头设置相对于缸体在非干涉状态和干涉状态之间改变状态，所述位置块使得能够相对于所述缸体设置的所述栓塞在所述非干涉状态和所述干涉状态之间改变状态，并且至少一个销组件和位置块处于干涉状态，以使锁芯从锁定位置禁止，而锁孔中没有匹配的键。

8. 发明申请

US20110080813A1 METHODS FOR OVERWITE CYCLE IMPROVEMENT OF OPTICAL STORAGE MEDIUM AND RELATED MACHINE READABLE MEDIA 有权
标题翻译：光存储介质过渡周期改进方法及相关机器可读介质
公开(公告)号：US20110080813A1
公开(公告)日：2011-04-07
申请号：US12572254
申请日：2009-10-01
申请人： Chia-Hung Lee , Chao-Ming Huang , Jui-Hung Yen
发明人： Chia-Hung Lee , Chao-Ming Huang , Jui-Hung Yen
IPC分类号： G11B21/08
CPC分类号： G11B7/006 , G11B7/0945 , G11B7/126 , G11B20/10009 , G11B20/10027 , G11B20/10222 , G11B27/32 , G11B27/36 , G11B2020/10898 , G11B2020/1277 , G11B2220/216 , G11B2220/2541 , G11B2220/2562
摘要： A method of recording data onto an optical storage medium includes: before starting recording data onto the optical storage medium from an expected link point on the optical storage medium, setting a current recording condition corresponding to the expected link point according to at least one previous recording condition corresponding to the expected link point; and controlling an operation of recording the data onto the optical storage medium according to the current recording condition.
摘要翻译：一种在光存储介质上记录数据的方法包括：在从光存储介质上的预期链接点开始将数据记录到光存储介质上之前，根据至少一个先前的记录设置与预期链接点对应的当前记录条件条件对应于预期的链接点; 以及根据当前记录条件控制将数据记录到光存储介质上的操作。

9. 发明申请

US20090277236A1 QUICKLY REKEYABLE LOCK CYLINDER AND PLUG ASSEMBLY THEREOF 有权
标题翻译：快速可锁定的缸体及其组装
公开(公告)号：US20090277236A1
公开(公告)日：2009-11-12
申请号：US12464424
申请日：2009-05-12
申请人： Chao-Ming Huang , Chi-Ming Chen
发明人： Chao-Ming Huang , Chi-Ming Chen
IPC分类号： E05B25/00 , E05B15/00
CPC分类号： E05B29/004 , Y10T70/7463 , Y10T70/7469 , Y10T70/7599 , Y10T70/7605 , Y10T70/7644 , Y10T70/7734 , Y10T70/774 , Y10T70/7746
摘要： A quickly rekeyable lock cylinder comprises a cylinder body and a plug assembly disposed within the cylinder body. The plug assembly comprises a plug body, a position block disposed at the plug body, a first rack group and a second rack group. The plug body has a longitudinal axis, a transverse axis vertical to the longitudinal axis and a rekeying tool opening. The first rack group has a plurality of first rack components. The second rack group may push the position block to move and has a plurality of second rack components in engagement with the first rack components and at least one tool-receiving portion pushed by the rekeying tool. The second rack components can move along transverse axis of the plug body to release engagement with the first rack components.
摘要翻译：快速可重新锁定的锁芯包括缸体和设置在缸体内的插头组件。插头组件包括插头主体，设置在插头主体上的定位块，第一机架组和第二机架组。插头本体具有纵向轴线，垂直于纵向轴线的横向轴线和重新键入工具开口。第一个机架组具有多个第一机架组件。第二机架组可以推动位置块移动并且具有与第一机架部件接合的多个第二机架部件和由重新键控工具推动的至少一个工具接收部分。第二机架部件可以沿着插塞主体的横向轴线移动以释放与第一机架部件的接合。

10. 发明申请

US20090277233A1 REKEYABLE LOCK CYLINDER AND OPERATING METHOD THEREOF 有权
标题翻译：可锁定的缸体及其操作方法
公开(公告)号：US20090277233A1
公开(公告)日：2009-11-12
申请号：US12432201
申请日：2009-04-29
申请人： Chao-Ming Huang , Chi-Ming Chen
发明人： Chao-Ming Huang , Chi-Ming Chen
IPC分类号： E05B25/00 , E05B15/00
CPC分类号： E05B29/004 , Y10T70/7452 , Y10T70/7463 , Y10T70/7559 , Y10T70/7599 , Y10T70/7605 , Y10T70/7616 , Y10T70/7644 , Y10T70/7734 , Y10T70/774 , Y10T70/7746 , Y10T70/778
摘要： A rekeyable lock cylinder comprises a cylinder body and a plug assembly disposed within the cylinder body. The plug assembly comprises a plug body, a plurality of assembled pins and a position block. The plug body has a longitudinal axis, a transverse axis vertical to the longitudinal axis, a keyhole and a first through hole. Each of the assembled pins is movably disposed in the plug body and comprises a first rack component and a second rack component selectively engaging with the first rack component. The position block disposed at the plug body has a plurality of pin runners used for disposing the first rack components, a second through hole corresponding to the first through hole and a tool-contacting surface located within the second through hole. The position block can move along the transverse axis-direction of the plug body to make each of the first rack components reengage with each of the second rack components.
摘要翻译：可重新连接的锁芯包括缸体和设置在缸体内的插头组件。插头组件包括插头主体，多个组装销和位置块。塞体具有纵向轴线，垂直于纵向轴线的横向轴线，锁孔和第一通孔。每个组装的销可移动地设置在插头主体中，并且包括选择性地与第一机架部件接合的第一机架部件和第二机架部件。设置在插头主体上的位置块具有用于设置第一齿条部件的多个销子流道，与第一通孔相对应的第二通孔和位于第二通孔内的工具接触表面。位置块可以沿着插塞主体的横向轴线方向移动，以使每个第一机架部件与每个第二机架部件重新接合。

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