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91. 发明申请

US20150295227A1 SILICON AND GRAPHENE-INCORPORATED RECHARGEABLE LI-ION BATTERIES WITH ENHANCED ENERGY DELIVERY AND CYCLING LIFE BY USING SILECON AND GRAPHENE BASED ANODE FOR ENERGY STORAGE 审中-公开
标题翻译：通过使用基于石墨和基于石墨的阳极进行能源储存的具有增强能量输送和循环寿命的硅和石墨可再充电锂离子电池
公开(公告)号：US20150295227A1
公开(公告)日：2015-10-15
申请号：US14250398
申请日：2014-04-11
申请人： Xin Zhao , Minjie Li , Yu-Ming Lin
发明人： Xin Zhao , Minjie Li , Yu-Ming Lin
IPC分类号： H01M4/134 , H01M4/1395 , H01M4/04
CPC分类号： H01M4/134 , H01M4/0404 , H01M4/0409 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/587 , H01M4/622 , H01M4/625
摘要： A silicon graphene-incorporated rechargeable Li-ion battery with enhanced energy delivery and cycling life comprising a high-performance Si/graphene composite anode, a cathode film and electrolyte is disclosed. The anode and cathode are immersed in or partially immersed in the electrolyte; wherein the anode is formed of a mixture of carbon coated Si and graphene composite with a polymer binder and a conductive additive. A method for fabricating such Si and graphene-based anode comprises the steps synthesis of carbon coated Si particles by polymer encapsulation and carbonization; enveloping the coated Si particles in graphene by mechanical agitation; formulating the carbon coated Si and graphene with a polymer binder and conductive additive; depositing the mixture onto current collectors. The anode structure affords a combination of superior rate capability, cycling life and improved volumetric capacity.
摘要翻译：公开了一种具有增强的能量输送和循环寿命的含硅石墨烯的可充电锂离子电池，其包括高性能Si /石墨烯复合阳极，阴极膜和电解质。将阳极和阴极浸入或部分浸入电解质中; 其中所述阳极由碳涂覆的Si和石墨烯复合材料与聚合物粘合剂和导电添加剂的混合物形成。制造这种Si和石墨烯阳极的方法包括通过聚合物包封和碳化合成碳包覆的Si颗粒的步骤; 通过机械搅拌将涂覆的Si颗粒包裹在石墨烯中; 用聚合物粘合剂和导电添加剂配制碳涂覆的Si和石墨烯; 将混合物沉积到集电器上。阳极结构提供优越的速率能力，循环寿命和改进的体积容量的组合。

92. 发明授权

US08816787B2 High frequency oscillator circuit and method to operate same 有权
标题翻译：高频振荡电路及其操作方法相同
公开(公告)号：US08816787B2
公开(公告)日：2014-08-26
申请号：US13551708
申请日：2012-07-18
申请人： Keith A. Jenkins , Yu-ming Lin
发明人： Keith A. Jenkins , Yu-ming Lin
IPC分类号： H03B7/06 , H03B5/12
CPC分类号： H03B7/06 , H03B2200/0084
摘要： A method includes providing an oscillator having a field effect transistor connected with a resonant circuit. The field effect transistor has a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The method further includes biasing the graphene channel via the gate electrode into a negative differential resistance region of operation to cause the oscillator to generate a frequency signal having a resonant frequency f0. There can be an additional step of varying the gate voltage so as to bias the graphene channel into the negative differential resistance region of operation and out of the negative differential resistance region of operation so as to turn on the frequency signal and to turn off the frequency signal, respectively.
摘要翻译：一种方法包括提供具有与谐振电路连接的场效应晶体管的振荡器。场效应晶体管具有耦合到栅极电压源的栅电极，源电极，漏电极和设置在源电极和漏电极之间并与其电连接的石墨烯通道。该方法还包括经由栅电极将石墨烯通道偏压成负的差分电阻区域，以使振荡器产生具有谐振频率f0的频率信号。可以存在改变栅极电压以便将石墨烯通道偏压到负的差分电阻区域和负的差分电阻区域的附加步骤，以便接通频率信号并且关闭频率信号。

93. 发明授权

US08796668B2 Metal-free integrated circuits comprising graphene and carbon nanotubes 有权
公开(公告)号：US08796668B2
公开(公告)日：2014-08-05
申请号：US12614724
申请日：2009-11-09
申请人： Yu-Ming Lin , Jeng-Bang Yau
发明人： Yu-Ming Lin , Jeng-Bang Yau
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/1606 , B82Y10/00 , H01L27/124 , H01L29/0665 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/7781 , H01L29/78618 , H01L29/78684
摘要： An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene.

94. 发明申请

US20140057113A1 Graphene Structures with Enhanced Stability and Composite Materials Formed Therefrom 有权
标题翻译：具有增强稳定性的石墨烯结构和形成的复合材料
公开(公告)号：US20140057113A1
公开(公告)日：2014-02-27
申请号：US13592370
申请日：2012-08-23
申请人： Xin Zhao , Yu-Ming Lin
发明人： Xin Zhao , Yu-Ming Lin
IPC分类号： B05D3/10 , B32B9/00 , B23P17/04 , H01M10/0525 , B82Y30/00
CPC分类号： H01M4/133 , B82Y30/00 , H01M4/96 , H01M8/04216 , H01M10/0525 , Y10T29/49115 , Y10T29/49885 , Y10T428/30
摘要： Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.
摘要翻译：本发明的方面涉及形成石墨烯结构的方法。最初，接收到一群粒子。颗粒簇包括多个颗粒，多个颗粒中的每个颗粒与多个颗粒中的一个或多个其它颗粒接触。随后，一层或多层沉积在颗粒簇上，其中一层或多层包含石墨烯。然后蚀刻掉多个颗粒，而基本上不蚀刻沉积的一个或多个层。最后，将剩余的一层或多层干燥。所得到的石墨烯结构特别抵抗聚集和压实的负面影响。

95. 发明申请

US20140022700A1 Graphene Composite Electrodes for Energy Storage Devices 有权
标题翻译：用于储能装置的石墨烯复合电极
公开(公告)号：US20140022700A1
公开(公告)日：2014-01-23
申请号：US13553846
申请日：2012-07-20
申请人： Xin Zhao , Yu-Ming Lin
发明人： Xin Zhao , Yu-Ming Lin
IPC分类号： H01G9/155 , B29C41/22 , C23C16/01 , B29C41/08 , H01M6/00 , H01M4/58 , H01M4/04 , B82Y99/00 , B82Y40/00
CPC分类号： H01M4/0428 , B82Y30/00 , B82Y40/00 , H01M4/133 , H01M4/1393 , H01M4/362 , H01M4/587 , Y10T29/49115
摘要： Aspects of the invention are directed to a method for forming a graphene composite structure. Initially, an encapsulating film is formed on a substrate. The encapsulating film comprises graphene. Subsequently, a plurality of particles are deposited on the encapsulating film, and then a temporary layer is deposited on the plurality of active particles and the encapsulating film. The substrate is then removed. Lastly, the temporary layer is also removed so as to cause the plurality of particles to form a cluster that is at least partially encapsulated by the encapsulating film.
摘要翻译：本发明的方面涉及一种形成石墨烯复合结构的方法。最初，在基板上形成封装膜。封装膜包括石墨烯。随后，在封装膜上沉积多个颗粒，然后在多个活性颗粒和封装膜上沉积临时层。然后去除衬底。最后，临时层也被去除，从而使多个颗粒形成至少部分被封装膜封装的簇。

96. 发明授权

US08546246B2 Radiation hardened transistors based on graphene and carbon nanotubes 有权
公开(公告)号：US08546246B2
公开(公告)日：2013-10-01
申请号：US13006081
申请日：2011-01-13
申请人： Yu-Ming Lin , Jeng-Bang Yau
发明人： Yu-Ming Lin , Jeng-Bang Yau
IPC分类号： H01L21/20
CPC分类号： H01L29/16 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02527 , H01L21/02656 , H01L29/1606 , H01L29/66742 , H01L29/78603 , H01L29/78684
摘要： Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.

97. 发明授权

US08445320B2 Graphene channel-based devices and methods for fabrication thereof 有权
标题翻译：石墨烯基通道器件及其制造方法
公开(公告)号：US08445320B2
公开(公告)日：2013-05-21
申请号：US12783676
申请日：2010-05-20
申请人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
发明人： Phaedon Avouris , Kuan-Neng Chen , Damon Farmer , Yu-Ming Lin
IPC分类号： H01L21/00
CPC分类号： H01L21/50 , B82Y10/00 , B82Y40/00 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L27/1207 , H01L29/1606 , H01L29/66742 , H01L29/775 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , H01L2924/00
摘要： Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.
摘要翻译：提供了基于石墨烯基通道的器件及其制造技术。在一个方面，一种半导体器件包括：第一晶片，其具有形成在第一衬底上的至少一个石墨烯通道;围绕石墨烯通道的第一氧化物层;延伸穿过第一氧化物层的石墨烯通道的源极和漏极接触; 以及第二晶片，其具有形成在第二基板中的CMOS器件层，围绕所述CMOS器件层的第二氧化物层和延伸穿过所述第二氧化物层的所述CMOS器件层的多个触点，所述晶片通过氧化物层之间的氧化物 - 氧化物键。与CMOS器件层的一个或多个触点与源极和漏极触点接触。 CMOS器件层的一个或多个其它触点是用于石墨烯通道的栅极触点。

98. 发明授权

US08053782B2 Single and few-layer graphene based photodetecting devices 有权
标题翻译：基于单层和几层石墨烯的光电检测器件
公开(公告)号：US08053782B2
公开(公告)日：2011-11-08
申请号：US12546097
申请日：2009-08-24
申请人： Phaedon Avouris , Yu-Ming Lin , Thomas Mueller , Fengnian Xia
发明人： Phaedon Avouris , Yu-Ming Lin , Thomas Mueller , Fengnian Xia
IPC分类号： H01L29/15
CPC分类号： H01L51/428 , H01L29/1606 , H01L31/02327 , H01L31/035209 , H01L31/101 , Y02E10/549
摘要： A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.
摘要翻译：公开了使用单层或多层石墨烯作为光子检测层的光电探测器。公开了具有不同配置的电极的多个实施例。此外，公开了包括多个光电检测元件的光电探测器阵列，用于诸如成像和监视的应用。

99. 发明申请

US20110114919A1 SELF-ALIGNED GRAPHENE TRANSISTOR 有权
标题翻译：自对准的石墨晶体管
公开(公告)号：US20110114919A1
公开(公告)日：2011-05-19
申请号：US12617770
申请日：2009-11-13
申请人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
发明人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/78684
摘要： A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
摘要翻译：石墨烯场效应晶体管包括栅极堆叠，栅极堆叠包括种子层，形成在种子层上的栅极氧化物和形成在栅极氧化物上的栅极金属; 绝缘层; 以及在种子层和绝缘层之间移动的石墨烯片。

100. 发明申请

US20110114918A1 FABRICATION OF GRAPHENE NANOELECTRONIC DEVICES ON SOI STRUCTURES 有权
标题翻译：石墨纳米电子器件在SOI结构上的制造
公开(公告)号：US20110114918A1
公开(公告)日：2011-05-19
申请号：US12620320
申请日：2009-11-17
申请人： Yu-Ming Lin , Jeng-Bang Yau
发明人： Yu-Ming Lin , Jeng-Bang Yau
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/1606 , H01L29/66742 , H01L29/7781 , H01L29/78687
摘要： A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer.
摘要翻译：公开了一种绝缘体上半导体结构和一种形成包括一体化石墨烯层的绝缘体上硅结构的方法。在一个实施例中，该方法包括处理硅材料以在硅材料内形成掩埋氧化物层，在掩埋氧化物之下形成硅衬底，以及在掩埋氧化物上形成绝缘体上硅层。将石墨烯层转移到绝缘体上硅层上。源极和漏极区域形成在绝缘体上硅层中，并且在石墨烯上方形成栅极。在一个实施例中，该处理包括在第一和第二硅部分中的每一个上生长相应的氧化物层，并且经由氧化物层将这些硅部分连接在一起以形成硅材料。在一个实施例中，所述处理还包括去除所述第一硅部分的一部分，在所述键合的氧化物上留下残留的硅层，并且所述石墨烯层位于所述剩余硅层上。

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