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91. 发明授权

US06667577B2 Plasma reactor with spoke antenna having a VHF mode with the spokes in phase 失效
标题翻译：具有辐射天线的等离子体反应器具有VHF模式，辐条处于同相状态
公开(公告)号：US06667577B2
公开(公告)日：2003-12-23
申请号：US10025408
申请日：2001-12-18
申请人： Steven Shannon , Daniel Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , Douglas A. Buchberger, Jr. , Shiang-Bau Wang , Robert B. Hagen , Matthew L Miller , Stephen Thai
发明人： Steven Shannon , Daniel Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , Douglas A. Buchberger, Jr. , Shiang-Bau Wang , Robert B. Hagen , Matthew L Miller , Stephen Thai
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.
摘要翻译：反应器的RF功率施加器包括内部和外部导电的径向辐条。一组内导电轮辐径向向外延伸并且与导电柱电连接到导电侧壁。一组外导电轮辐径向向内延伸到导电柱，并与导电侧壁电连接。以这种方式，导电辐条的内部和外部组电连接在一起，内部和外部组的辐条与导电外壳的组合具有与导电外壳的高度成反比的基本谐振频率和内外套导电辐条。 RF源功率发生器耦合在RF功率施加器上并且具有对应于基本谐振频率的RF频率。

92. 发明授权

US06607675B1 Method of etching carbon-containing silicon oxide films 失效
标题翻译：蚀刻含碳氧化硅膜的方法
公开(公告)号：US06607675B1
公开(公告)日：2003-08-19
申请号：US09650975
申请日：2000-08-29
申请人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
发明人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
IPC分类号： H01L21027
CPC分类号： H01L21/31116
摘要： We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon-containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. When the method of the invention is used, a higher carbon content in the carbon-containing silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon-containing silicon oxide film is plasma etched using a plasma generated from a source gas comprising NH3 and CxFy. It is necessary to achieve the proper balance between the relative amounts of NH3 and CxFy in the plasma source gas in order to provide a balance between etch by-product polymer deposition and removal on various surfaces of the substrate being etched. The NH3 gas functions to “clean up” deposited polymer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon:nitrogen in the plasma source gas typically ranges from about 0.3:1 to about 3:1. We have found that C2F6 and C4F8 provide excellent etch rates during etching of carbon-containing silicon oxide films.
摘要翻译：我们已经发现了一种用于等离子体蚀刻含碳氧化硅膜的方法，其提供优异的蚀刻轮廓控制，含碳氧化硅膜的快速蚀刻速率，以及优选将含碳氧化硅膜蚀刻到覆盖光致抗蚀剂掩模材料。当使用本发明的方法时，含碳氧化硅膜中较高的碳含量导致更快的蚀刻速率，至少达到20原子百分比的碳含量。特别地，使用由包含NH 3和C x F y的源气体产生的等离子体对含碳氧化硅膜进行等离子体蚀刻。为了提供等离子体源气体中NH 3和C x F y的相对量之间的适当平衡，为了提供蚀刻副产物聚合物沉积和被蚀刻的衬底的各种表面上的去除之间的平衡。 NH 3气体用于“清除”沉积的聚合物在光致抗蚀剂表面，蚀刻表面和处理室表面上。等离子体源气体中的碳：氮的原子比通常为约0.3:1至约3:1。我们发现C2F6和C4F8在含碳氧化硅膜的蚀刻过程中提供了优异的蚀刻速率。

93. 发明授权

US06312554B1 Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber 失效
标题翻译：用于控制半导体晶片处理室中的反应性与非反应性离子的比率的装置和方法
公开(公告)号：US06312554B1
公开(公告)日：2001-11-06
申请号：US08761024
申请日：1996-12-05
申请人： Yan Ye
发明人： Yan Ye
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H05H1/46
摘要： A applicator for focusing a plasma directly into a process chamber in which a process gas is injected into an applicator housing through a narrow channel. A focused power source generates a homogeneous plasma from the process gas within the applicator. The homogeneous plasma is focused directly into the process chamber through an outlet defined in the applicator. The outlet is configured to provide a desired expansion of gas or plasma torch strength. In the preferred embodiment of the invention, a plasma of non-reactive species is directly focused into the process chamber to increase the density of the non-reactive ions in the chamber, such that the ratio of reactive and non-reactive ions in the process chamber is controlled, and etch process performance is enhanced.
摘要翻译：一种用于将等离子体直接聚焦到处理室中的处理气体，其中处理气体通过狭窄的通道注入到施用器壳体中。聚焦电源从施加器内的工艺气体产生均匀的等离子体。均质等离子体通过施加器中限定的出口直接聚焦到处理室中。出口构造成提供气体或等离子体炬强度的期望的膨胀。在本发明的优选实施方案中，非反应性物质的等离子体直接聚焦到处理室中以增加室中的非反应性离子的密度，使得过程中反应性和非反应性离子的比例室被控制，并且蚀刻工艺性能得到提高。

94. 发明授权

US6008140A Copper etch using HCI and HBr chemistry 失效
标题翻译：铜蚀刻使用HCI和HBr化学
公开(公告)号：US6008140A
公开(公告)日：1999-12-28
申请号：US911878
申请日：1997-08-13
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： C23F4/00 , H01L21/02 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.
摘要翻译：铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％。最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

95. 发明授权

US5891348A Process gas focusing apparatus and method 失效
标题翻译：工艺气体聚焦装置及方法
公开(公告)号：US5891348A
公开(公告)日：1999-04-06
申请号：US592821
申请日：1996-01-26
申请人： Yan Ye , Gerald Zheyao Yin , Diana Xiaobing Ma , Steve S. Y. Mak
发明人： Yan Ye , Gerald Zheyao Yin , Diana Xiaobing Ma , Steve S. Y. Mak
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/687 , H05H1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32642 , H01L21/68721 , Y10S156/915
摘要： An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface. The inlet (105) of the channel (100) has a width w sized to allow a sufficient amount of process gas to flow into the channel (100) to maintain substantially equal processing rates at the center (80) and peripheral edge (85) of the substrate surface.
摘要翻译：一种用于均匀地处理具有中心（80）和周缘（85）的表面的基板（25）的装置（20）。设备（20）包括（i）具有用于在处理室（30）中分配处理气体的气体分配器（55）的处理室（30）。（ii）用于在处理室（30）中支撑衬底（25）的支撑件（75）; （iii）用于在所述处理室（30）中从所述处理气体形成等离子体的等离子体发生器; 和（iv）处理室（30）中的聚焦环（90）。聚焦环（90）包括（a）围绕基底（25）以在基底表面上基本上包含等离子体的壁（95），和（b）壁（95）中的通道（100）。通道（100）具有与衬底表面的周边边缘（85）相邻并且基本上连续地延伸的入口（105）。通道（100）的入口（105）具有宽度w，其尺寸允许足够量的处理气体流入通道（100），以在中心（80）和外围边缘（85）处保持基本上相等的处理速率，的基板表面。

96. 发明授权

US5817534A RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers 失效
标题翻译： RF等离子体反应器，其具有用于在半导体晶片的处理期间进行清洁的清洁电极
公开(公告)号：US5817534A
公开(公告)日：1998-10-06
申请号：US567376
申请日：1995-12-04
申请人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
发明人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/00
CPC分类号： H01L21/67028 , H01J37/32862 , Y10S438/905
摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
摘要翻译：本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行在一个表面上去除在晶片加工期间沉积的污染物。通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。

97. 发明授权

US5753137A Dry cleaning of semiconductor processing chambers using non-metallic, carbon-comprising material 失效
标题翻译：使用非金属的含碳材料干燥半导体处理室
公开(公告)号：US5753137A
公开(公告)日：1998-05-19
申请号：US786406
申请日：1997-01-21
申请人： Yan Ye , Charles Steven Rhoades , Gerald Z. Yin
发明人： Yan Ye , Charles Steven Rhoades , Gerald Z. Yin
IPC分类号： C23C14/00 , B08B7/00 , C23C16/44 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , C09K13/00
CPC分类号： H01L21/02046 , B08B7/0035 , C23C16/4405 , H01L21/67028 , H01L21/67034 , Y10S438/905
摘要： In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.
摘要翻译：根据本发明，可以通过在半导体加工期间将非气态干洗增强材料放置在被工件占据的位置来改善半导体处理室壁的等离子体干洗率。非气态干洗增强材料能够产生干洗反应物质和/或降低从等离子体气体进料到处理室产生的干洗反应物质的消耗。当在等离子体干洗期间通过将等离子体处理室内的非气态反应性物质产生材料源放置在等离子体处理室表面中来处理室非挥发性污染物沉积物时，产生非反应性物质的非气态源材料不需要在工件支撑平台上或邻近工件支撑平台上进行：然而，该位置在典型的工艺室设计中提供了极好的清洁效果。

98. 发明授权

US5685916A Dry cleaning of semiconductor processing chambers 失效
标题翻译：半导体处理室的干洗
公开(公告)号：US5685916A
公开(公告)日：1997-11-11
申请号：US499157
申请日：1995-07-07
申请人： Yan Ye , Charles Steven Rhoades , Gerald Z. Yin
发明人： Yan Ye , Charles Steven Rhoades , Gerald Z. Yin
IPC分类号： C23C14/00 , B08B7/00 , C23C16/44 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02046 , B08B7/0035 , C23C16/4405 , H01L21/67028 , H01L21/67034 , Y10S438/905
摘要： In accordance with the present invention, the plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be loacted upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.
摘要翻译：根据本发明，可以通过在半导体加工期间将非气态干洗增强材料放置在被工件占据的位置来改善半导体处理室壁的等离子体干洗率。非气态干洗增强材料能够产生干洗反应物质和/或降低从等离子体气体进料到处理室产生的干洗反应物质的消耗。当在等离子体干洗期间通过将等离子体处理室内的非气态反应性物质产生材料源放置在等离子体处理室表面中来处理室非挥发性污染物沉积物时，产生非反应性物质的非气态源材料不需要在工件支撑平台上或邻近工件支撑平台上进行：然而，该位置在典型的工艺室设计中提供了极好的清洁效果。

99. 发明授权

US5608155A Method and apparatus for detecting particles on a substrate 失效
标题翻译：用于检测基板上的颗粒的方法和装置
公开(公告)号：US5608155A
公开(公告)日：1997-03-04
申请号：US496946
申请日：1995-06-30
申请人： Yan Ye , Anand Gupta
发明人： Yan Ye , Anand Gupta
IPC分类号： G01N21/88 , G01N15/06 , G01N15/14 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/66 , H01S3/00
CPC分类号： G01N15/1468 , G01N15/065 , G01N21/9501 , G01N2015/1493
摘要： The apparent size of sub-micron contaminant particles on a wafer surface is enlarged by selective condensation of a vapor on the particles. The substrate is located proximate to and spaced apart from a liquid vapor source which is heated. The vaporized liquid adheres to the particles, and after a predetermined period of time, condensation of vapor on the substrate is stopped, and the substrate is scanned for detecting the particles.
摘要翻译：通过颗粒上的蒸气的选择性缩合，晶片表面上的亚微米污染物颗粒的表观尺寸增大。衬底位于与加热的液体蒸气源相邻并间隔开的位置。蒸发的液体粘附到颗粒上，并且在预定时间之后，停止在基板上的蒸气冷凝，并且扫描基板以检测颗粒。

100. 发明授权

US5578131A Reduction of contaminant buildup in semiconductor processing apparatus 失效
标题翻译：减少半导体加工设备中的污染物累积
公开(公告)号：US5578131A
公开(公告)日：1996-11-26
申请号：US459197
申请日：1995-06-02
申请人： Yan Ye , Anand Gupta , Shamouil Shamouliam
发明人： Yan Ye , Anand Gupta , Shamouil Shamouliam
IPC分类号： C09D127/18 , C09D127/12 , C23C14/56 , C23C16/44 , H01J37/32 , H01L21/00 , H01L21/205 , C23C16/00
CPC分类号： H01L21/6715 , C23C14/564 , C23C16/4404 , H01J37/32477 , H01L21/67011 , H01J2237/022
摘要： The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.
摘要翻译：本发明提供了一种用于半导体处理的装置，其中连接到腔室的反应室和真空管道装置涂覆有具有低蒸气压和低粘着系数的卤化聚合物材料的膜。优选的材料包括低分子量聚氟乙烯聚合物，例如聚四氟乙烯和聚氯三氟乙烯。提供一种方法来防止在加工工件期间在半导体处理室和连接到其上的真空管道装置的涂覆表面上产生污染物积聚。

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