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    • 95. 发明授权
    • Signal amplification apparatus with advanced linearization
    • 具有高级线性化的信号放大装置
    • US07940126B2
    • 2011-05-10
    • US12625201
    • 2009-11-24
    • Young-Wan ChoiDo-Gyun KimNam-Pyo Hong
    • Young-Wan ChoiDo-Gyun KimNam-Pyo Hong
    • H03F3/04
    • H03F1/223H03F1/3205H03F2200/108H03F2200/181H03F2200/451
    • Provided is a signal amplification apparatus with advanced linearization, the signal amplification apparatus including: a driving unit having a structure of a cascode amplifier including a first active element and a second active element and outputting an amplification signal in which an input signal is amplified, to an output terminal; a third active element receiving a signal diverged between the first active element and the second active element while gate and drain terminals of the third active element are shorted; a fourth active element of which gate and drain terminals are connected to a source terminal of the third active element; and a fifth active element of which gate terminal is connected to the drain terminal of the fourth active element, outputting a non-linear signal having an opposite phase to the amplification signal to the output terminal so as to cancel a third-order inter-modulation distortion component included in the input signal. An amplification signal in which an input signal is amplified is combined with a non-linear signal having an opposite phase to the amplification signal and a low gain and is output so that a third-order inter-modulation distortion component included in the input signal can be cancelled and a signal with advanced linearity can be output.
    • 提供一种具有高级线性化的信号放大装置,该信号放大装置包括:驱动单元,具有包括第一有源元件和第二有源元件的共源共栅放大器的结构,并输出其中输入信号被放大的放大信号, 输出端子; 第三有源元件接收在第一有源元件和第二有源元件之间发散的信号,同时第三有源元件的栅极和漏极端子短路; 栅极和漏极端子连接到第三有源元件的源极端子的第四有源元件; 以及第五有源元件,其栅极端子连接到第四有源元件的漏极端子,向输出端子输出具有与放大信号相反的相位的非线性信号,以消除三阶互调 失真分量包含在输入信号中。 其中输入信号被放大的放大信号与与放大信号具有相反相位的非线性信号和低增益组合,并被输出,使得输入信号中包括的三阶互调失真分量可以 被取消,并且可以输出具有高线性度的信号。
    • 98. 发明授权
    • Semiconductor device having trench isolation region and methods of fabricating the same
    • 具有沟槽隔离区域的半导体器件及其制造方法
    • US07781304B2
    • 2010-08-24
    • US12216820
    • 2008-07-11
    • Kyung-Mun ByunJu-Seon GooSang-Ho RhaEun-Kyung BaekJong-Wan Choi
    • Kyung-Mun ByunJu-Seon GooSang-Ho RhaEun-Kyung BaekJong-Wan Choi
    • H01L21/76
    • H01L21/76229
    • A semiconductor device having a trench isolation region and methods of fabricating the same are provided. The method includes forming a first trench region in a substrate, and a second trench region having a larger width than the first trench region in the substrate. A lower material layer may fill the first and second trench regions. The lower material layer may be etched by a first etching process to form a first preliminary lower material layer pattern remaining in the first trench region and form a second preliminary lower material layer pattern that remains in the second trench region. An upper surface of the second preliminary lower material layer pattern may be at a different height than the first preliminary lower material layer pattern. The first and second preliminary lower material layer patterns may be etched by a second etching process to form first and second lower material layer patterns having top surfaces at substantially the same height. First and second upper material layer patterns may be formed on the first and second lower material layer patterns, respectively.
    • 提供了具有沟槽隔离区域的半导体器件及其制造方法。 该方法包括在衬底中形成第一沟槽区域和在衬底中具有比第一沟槽区域宽的宽度的第二沟槽区域。 下部材料层可以填充第一和第二沟槽区域。 可以通过第一蚀刻工艺蚀刻下部材料层,以形成残留在第一沟槽区域中的第一初步下部材料层图案,并形成保留在第二沟槽区域中的第二预备下部材料层图案。 第二初步下层材料层图案的上表面可以处于与第一预备下层材料层图案不同的高度。 可以通过第二蚀刻工艺蚀刻第一和第二初级下部材料层图案,以形成具有基本上相同高度的顶表面的第一和第二下部材料层图案。 可以分别在第一和第二下部材料层图案上形成第一和第二上部材料层图案。
    • 100. 发明申请
    • METHOD AND APPARATUS FOR EFFECTIVE MULTI-CELL INTERFERENCE CONTROL SERVICE
    • 用于有效的多细胞干扰控制服务的方法和装置
    • US20100159972A1
    • 2010-06-24
    • US12371602
    • 2009-02-15
    • Sung-Rae CHOWan ChoiDong-In Kim
    • Sung-Rae CHOWan ChoiDong-In Kim
    • H04B7/00
    • H04B7/022
    • There are provided a method and apparatus for an effective multi-cell interference control service, to make it possible for users located at a cell boundary to dynamically select a suitable interference control technique by monitoring interference information collected by user terminals and network conditions of a serving base station and adjacent base stations to solve co-channel interference by adjacent cell users.The apparatus for a multi-cell interference control service comprises: a user terminal for requesting interference control from a BS (base station); and a serving BS for requesting the interference control from an adjacent BS, wherein the user terminal comprises: an SINR (signal to interference plus noise ratio) measurement unit for sensing interference level of an adjacent cell; a collaboration determination unit for determining whether to collaborate with the adjacent BS, considering a user QoS (quality of service); a collaboration gain determination unit for requesting multi-cell interference control, considering interference control gain; and a collaboration request signal transmission unit for requesting collaboration with the adjacent BS from the serving BS, and wherein the serving BS comprises: a collaboration gain information collection unit for collecting collaboration gain information of the user terminal; an inter-cell signal control unit for requesting inter-cell interference control; and a service start determination unit for determining whether to start an interference control service with a collaborating adjacent cell.
    • 提供了一种有效的多小区干扰控制服务的方法和装置,使得位于小区边界的用户能够通过监视由用户终端收集的干扰信息和服务的网络条件来动态地选择合适的干扰控制技术 基站和相邻基站,以解决相邻小区用户的同信道干扰。 用于多小区干扰控制服务的装置包括:用于从BS(基站)请求干扰控制的用户终端; 以及用于请求来自相邻BS的干扰控制的服务BS,其中所述用户终端包括:用于感测相邻小区的干扰电平的SINR(信号与干扰加噪声比)测量单元; 协作确定单元,用于考虑用户QoS(服务质量)来确定是否与相邻BS协作; 考虑干扰控制增益的协议增益确定单元,用于请求多小区干扰控制; 以及协作请求信号发送单元,用于从服务BS请求与相邻BS的协作,并且其中所述服务BS包括:协作增益信息收集单元,用于收集用户终端的协作增益信息; 用于请求小区间干扰控制的小区间信号控制单元; 以及服务开始确定单元,用于确定是否与协作相邻小区开始干扰控制服务。