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    • 5. 再颁专利
    • Semiconductor light emitting device with transparent electrode having holes
    • 具有透明电极的半导体发光器件具有孔
    • USRE45217E1
    • 2014-10-28
    • US12211707
    • 2008-09-16
    • Jun-Seok HaJun-Ho JangJae-Wan ChoiJung-Hoon Seo
    • Jun-Seok HaJun-Ho JangJae-Wan ChoiJung-Hoon Seo
    • H01L21/00
    • H01L33/42H01L33/387
    • A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer. Further, the first transparent electrode is in the shape of columns with gaps therebetween on the second type semiconductor layer, and the second transparent electrode completely covers the first transparent electrode and fills the gaps of the first transparent electrode.
    • 一种半导体发光器件及其制造方法,包括:提供衬底; 在基板上形成n型半导体层,发光层,p型半导体层; 在p型半导体层上形成每一个区域上具有孔的第一透明电极; 以及在所述第一透明电极上形成第一焊盘。 一种制造半导体发光器件的方法,包括在所述第一类型半导体层上形成发光层; 在所述发光层上形成第二类型半导体层; 在所述第二类型半导体层上形成第一透明电极,所述第一透明电极在某一区域具有孔,从而暴露所述第二类型半导体层; 在所述第一透明电极上形成第二透明电极; 在所述第二透明电极上形成第一焊盘; 以及在所述第一类型半导体层上形成第二焊盘。 此外,第一透明电极是在第二类型半导体层上具有间隙的列的形状,并且第二透明电极完全覆盖第一透明电极并填充第一透明电极的间隙。
    • 8. 发明授权
    • Micro-resonator sensor using evanescent wave of total reflection mirror
    • 微谐振传感器使用全反射镜的消逝波
    • US08346031B2
    • 2013-01-01
    • US12993777
    • 2009-06-19
    • Young-Wan ChoiDoo Gun Kim
    • Young-Wan ChoiDoo Gun Kim
    • G02B6/00G01J3/44
    • G01N21/7746G01N21/552G01N2021/7779
    • A micro-resonator sensor uses an evanescent wave of a total reflection mirror. The sensor includes an input waveguide for guiding inspection light incidented on one end section to the other section. A total reflection mirror is disposed at the other section of the input waveguide such that an incident angle made with the input waveguide is larger than a total reflection threshold angle at which the inspection light is totally reflected, and includes a receptor provided on the other side from the side on which the inspection light is incidented and combined with a measurement-subject material. An output waveguide is disposed at a certain output angle relative to the total reflection mirror for outputting a reflection light whose intensity changes according to the measurement-subject material due to an interaction between the evanescent wave generated by the inspection light incidented to the total reflection mirror and the measurement-subject material.
    • 微谐振器传感器使用全反射镜的ev逝波。 传感器包括用于将入射到一个端部的检查光导向另一部分的输入波导。 全反射镜设置在输入波导的另一部分处,使得与输入波导形成的入射角大于检查光全反射的全反射阈值角,并且包括设置在另一侧的受体 从检查光入射的一侧与测量对象材料组合。 输出波导相对于全反射镜以一定的输出角设置,用于输出由于由入射到全反射镜的检查光产生的ev逝波之间的相互作用,其强度根据测量对象材料而变化的反射光 和测量对象材料。