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1. 发明申请

US20070295952A1 Light Emitting Diode having vertical topology and method of making the same 有权
标题翻译：具有垂直拓扑的发光二极管及其制作方法
公开(公告)号：US20070295952A1
公开(公告)日：2007-12-27
申请号：US11708133
申请日：2007-02-20
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

2. 发明授权

US07768025B2 Light emitting diode having vertical topology and method of making the same 有权
公开(公告)号：US07768025B2
公开(公告)日：2010-08-03
申请号：US11898368
申请日：2007-09-11
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

3. 发明授权

US08624288B2 Light emitting diode having vertical topology and method of making the same 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：US08624288B2
公开(公告)日：2014-01-07
申请号：US13219356
申请日：2011-08-26
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/36 , H01L33/44
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

4. 发明申请

US20110003416A1 LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：US20110003416A1
公开(公告)日：2011-01-06
申请号：US12880809
申请日：2010-09-13
申请人： Jun Ho JANG , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho JANG , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

5. 发明申请

US20120018700A1 Light Emitting Diode Having Vertical Topology And Method Of Making The Same 有权
标题翻译：具有垂直拓扑的发光二极管及其制作方法
公开(公告)号：US20120018700A1
公开(公告)日：2012-01-26
申请号：US13219356
申请日：2011-08-26
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

6. 发明授权

US07834374B2 Light emitting diode having vertical topology and method of making the same 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：US07834374B2
公开(公告)日：2010-11-16
申请号：US11708133
申请日：2007-02-20
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/40 , H01L33/44
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

7. 发明授权

US08039281B2 Light emitting diode having vertical topology and method of making the same 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：US08039281B2
公开(公告)日：2011-10-18
申请号：US12880809
申请日：2010-09-13
申请人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
发明人： Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
IPC分类号： H01L33/36
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要翻译：具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

8. 发明授权

US08652924B2 Methods of fabricating a storage node in a semiconductor device and methods of fabricating a capacitor using the same 有权
标题翻译：在半导体器件中制造存储节点的方法和使用其制造电容器的方法
公开(公告)号：US08652924B2
公开(公告)日：2014-02-18
申请号：US13396451
申请日：2012-02-14
申请人： Han Sang Song , Jong Kook Park
发明人： Han Sang Song , Jong Kook Park
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L28/60 , H01L27/10852 , H01L27/10855 , H01L28/91
摘要： A storage node is formed in a semiconductor device by forming an interlayer insulation layer on a substrate, forming an etch stop layer and a first sacrificial layer on the interlayer insulation layer, patterning the first sacrificial layer and the etch stop layer to form a first sacrificial layer pattern and an etch stop layer pattern that define a storage node contact hole, forming a recessed first storage node conductive pattern that conformally covers a lower sidewall and a bottom surface of the storage node contact hole, forming a second storage node conductive pattern that includes a first portion surrounded by the recessed first storage node conductive pattern and a second portion conformally covering an upper sidewall of the storage node contact hole, and removing the first sacrificial layer pattern. The recessed first storage node conductive pattern and the second storage node conductive pattern constitute a storage node.
摘要翻译：存储节点通过在衬底上形成层间绝缘层而形成在半导体器件中，在层间绝缘层上形成蚀刻停止层和第一牺牲层，图案化第一牺牲层和蚀刻停止层以形成第一牺牲层层图案和蚀刻停止层图案，其限定存储节点接触孔，形成保形覆盖存储节点接触孔的下侧壁和底表面的凹陷的第一存储节点导电图案，形成第二存储节点导电图案，其包括由凹入的第一存储节点导电图案包围的第一部分和保形地覆盖存储节点接触孔的上侧壁的第二部分，以及去除第一牺牲层图案。凹陷的第一存储节点导电图案和第二存储节点导电图案构成存储节点。

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