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1. 发明授权

US07940126B2 Signal amplification apparatus with advanced linearization 有权
标题翻译：具有高级线性化的信号放大装置
公开(公告)号：US07940126B2
公开(公告)日：2011-05-10
申请号：US12625201
申请日：2009-11-24
申请人： Young-Wan Choi , Do-Gyun Kim , Nam-Pyo Hong
发明人： Young-Wan Choi , Do-Gyun Kim , Nam-Pyo Hong
IPC分类号： H03F3/04
CPC分类号： H03F1/223 , H03F1/3205 , H03F2200/108 , H03F2200/181 , H03F2200/451
摘要： Provided is a signal amplification apparatus with advanced linearization, the signal amplification apparatus including: a driving unit having a structure of a cascode amplifier including a first active element and a second active element and outputting an amplification signal in which an input signal is amplified, to an output terminal; a third active element receiving a signal diverged between the first active element and the second active element while gate and drain terminals of the third active element are shorted; a fourth active element of which gate and drain terminals are connected to a source terminal of the third active element; and a fifth active element of which gate terminal is connected to the drain terminal of the fourth active element, outputting a non-linear signal having an opposite phase to the amplification signal to the output terminal so as to cancel a third-order inter-modulation distortion component included in the input signal. An amplification signal in which an input signal is amplified is combined with a non-linear signal having an opposite phase to the amplification signal and a low gain and is output so that a third-order inter-modulation distortion component included in the input signal can be cancelled and a signal with advanced linearity can be output.
摘要翻译：提供一种具有高级线性化的信号放大装置，该信号放大装置包括：驱动单元，具有包括第一有源元件和第二有源元件的共源共栅放大器的结构，并输出其中输入信号被放大的放大信号，输出端子; 第三有源元件接收在第一有源元件和第二有源元件之间发散的信号，同时第三有源元件的栅极和漏极端子短路; 栅极和漏极端子连接到第三有源元件的源极端子的第四有源元件; 以及第五有源元件，其栅极端子连接到第四有源元件的漏极端子，向输出端子输出具有与放大信号相反的相位的非线性信号，以消除三阶互调失真分量包含在输入信号中。其中输入信号被放大的放大信号与与放大信号具有相反相位的非线性信号和低增益组合，并被输出，使得输入信号中包括的三阶互调失真分量可以被取消，并且可以输出具有高线性度的信号。

2. 发明申请

US20080266573A1 Micro resonator sensor 失效
标题翻译：微谐振传感器
公开(公告)号：US20080266573A1
公开(公告)日：2008-10-30
申请号：US11982745
申请日：2007-11-05
申请人： Young-Wan Choi , Doo-Gun Kim
发明人： Young-Wan Choi , Doo-Gun Kim
IPC分类号： G01B9/02 , G02B6/26
CPC分类号： G01N21/7746 , G01N2021/7779 , G02B6/12007
摘要： A micro resonator sensor includes a main waveguide, a resonance waveguide and optical path changing means. Optical path changing means are installed at apex regions contacting with adjacent optical waveguides forming the resonance waveguide and reflect at least a part of the split optical signal inputted into the resonance waveguide to circulate the split optical signal inside the resonance waveguide. The micro resonator sensor can be manufactured without an excessive radiation loss and can be manufactured as an on-chip.
摘要翻译：微谐振器传感器包括主波导，谐振波导和光路改变装置。光路改变装置安装在与形成谐振波导的相邻光波导接触的顶点区域处，并且反射输入到谐振波导中的分裂光信号的至少一部分，以使共振波导内的分离光信号循环。微型谐振器传感器可以在没有过多辐射损耗的情况下制造，并且可以作为片上制造。

3. 发明授权

US08346031B2 Micro-resonator sensor using evanescent wave of total reflection mirror 有权
标题翻译：微谐振传感器使用全反射镜的消逝波
公开(公告)号：US08346031B2
公开(公告)日：2013-01-01
申请号：US12993777
申请日：2009-06-19
申请人： Young-Wan Choi , Doo Gun Kim
发明人： Young-Wan Choi , Doo Gun Kim
IPC分类号： G02B6/00 , G01J3/44
CPC分类号： G01N21/7746 , G01N21/552 , G01N2021/7779
摘要： A micro-resonator sensor uses an evanescent wave of a total reflection mirror. The sensor includes an input waveguide for guiding inspection light incidented on one end section to the other section. A total reflection mirror is disposed at the other section of the input waveguide such that an incident angle made with the input waveguide is larger than a total reflection threshold angle at which the inspection light is totally reflected, and includes a receptor provided on the other side from the side on which the inspection light is incidented and combined with a measurement-subject material. An output waveguide is disposed at a certain output angle relative to the total reflection mirror for outputting a reflection light whose intensity changes according to the measurement-subject material due to an interaction between the evanescent wave generated by the inspection light incidented to the total reflection mirror and the measurement-subject material.
摘要翻译：微谐振器传感器使用全反射镜的ev逝波。传感器包括用于将入射到一个端部的检查光导向另一部分的输入波导。全反射镜设置在输入波导的另一部分处，使得与输入波导形成的入射角大于检查光全反射的全反射阈值角，并且包括设置在另一侧的受体从检查光入射的一侧与测量对象材料组合。输出波导相对于全反射镜以一定的输出角设置，用于输出由于由入射到全反射镜的检查光产生的ev逝波之间的相互作用，其强度根据测量对象材料而变化的反射光和测量对象材料。

4. 发明授权

US5488231A Metal/semiconductor junction Schottky diode optical device using a distortion grown layer 失效
标题翻译：金属/半导体结肖特基二极管光器件使用失真生长层
公开(公告)号：US5488231A
公开(公告)日：1996-01-30
申请号：US352628
申请日：1994-12-09
申请人： O-Kyun Kwon , Young-Wan Choi , El-Hang Lee
发明人： O-Kyun Kwon , Young-Wan Choi , El-Hang Lee
IPC分类号： H01L29/47 , G02F1/015 , G02F3/00 , G02F3/02 , H01L29/12 , H01L29/872 , H01L31/0352 , H01L31/10 , H01L31/108 , H01L27/14 , H01L31/00
CPC分类号： H01L31/0352 , H01L31/108
摘要： A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.
摘要翻译：描述了使用失真生长层的金属/半导体结肖特基二极管光学器件。在半绝缘GaAs衬底上周期性地生长多个GaAs反射镜和AlAs镜层。在GaAs反射镜和AlAs镜面层上形成n +或p +半导体层。在半导体层上形成GaAs缓冲层，以生长用作电极和反射镜的肖特基金属层。具有电光吸收特性的多量子阱结构位于半导体层和肖特基金属层之间，用于构造具有金属层/多量子阱结构的二极管。镜面层和二极管的至少一部分形成有一层，以便在金属层和镜层之间具有共振和非共振条件。形成有二极管的基板具有由光学非反射层形成的相对侧。

5. 发明授权

US07612887B2 Micro resonator sensor 失效
标题翻译：微谐振传感器
公开(公告)号：US07612887B2
公开(公告)日：2009-11-03
申请号：US11982745
申请日：2007-11-05
申请人： Young-Wan Choi , Doo-Gun Kim
发明人： Young-Wan Choi , Doo-Gun Kim
IPC分类号： G01C3/14 , G01B9/02
CPC分类号： G01N21/7746 , G01N2021/7779 , G02B6/12007
摘要： A micro resonator sensor includes a main waveguide, a resonance waveguide and optical path changing means. Optical path changing means are installed at apex regions contacting with adjacent optical waveguides forming the resonance waveguide and reflect at least a part of the split optical signal inputted into the resonance waveguide to circulate the split optical signal inside the resonance waveguide. The micro resonator sensor can be manufactured without an excessive radiation loss and can be manufactured as an on-chip.
摘要翻译：微谐振器传感器包括主波导，谐振波导和光路改变装置。光路改变装置安装在与形成谐振波导的相邻光波导接触的顶点区域处，并且反射输入到谐振波导中的分裂光信号的至少一部分，以使共振波导内的分离光信号循环。微型谐振器传感器可以在没有过多辐射损耗的情况下制造，并且可以作为片上制造。

6. 发明授权

US5448080A Ultrafast optical switching device having a double-junction multiple quantum well structure 失效
标题翻译：具有双结多量子阱结构的超快光开关器件
公开(公告)号：US5448080A
公开(公告)日：1995-09-05
申请号：US274192
申请日：1994-07-12
申请人： Seon-Gyu Han , Jong-Tai Lee , Byueng-Su Yoo , Tae-Hyung Zyung , Young-Wan Choi , Pyong-Woon Park , El-Hang Lee
发明人： Seon-Gyu Han , Jong-Tai Lee , Byueng-Su Yoo , Tae-Hyung Zyung , Young-Wan Choi , Pyong-Woon Park , El-Hang Lee
IPC分类号： G02F1/015 , G02F1/01 , G02F1/35 , H01L27/14 , H01L31/00
CPC分类号： G02F1/01716 , B82Y20/00 , G02F2001/01733
摘要： Disclosed is an ultrafast optical switching device having two types of multiple quantum well structures to be connected with each other, the device comprising a semi-insulating substrate; and a first and a second multiple quantum well structure formed sequentially on the substrate and united with each other to produce a double-junction multiple quantum well structure. Each of the multiple quantum well structures has nonlinear optical effects and two life time constants present while switching off in the device. One of the life time constants corresponds to a short life time constant to be determined dependent on electrons in the double-junction multiple quantum well structure and the other of the life time constants corresponds to a long life time constant to be determined dependent on holes and lattices therein. The multiple quantum well structures are formed in such a manner that short life time constants thereof may be in-phase with each other and long life time constants thereof may be out-of-phase to each other. The multiple quantum well structures are formed differently from each other in composition.
摘要翻译：公开了一种具有彼此连接的两种类型的多量子阱结构的超快速光学开关器件，该器件包括半绝缘衬底; 以及在衬底上顺序地形成并彼此结合以产生双结多量子阱结构的第一和第二多量子阱结构。多个量子阱结构中的每个都具有非线性光学效应，并且在器件中关断时存在两个寿命常数。寿命常数之一对应于取决于双结多量子阱结构中的电子而确定的短寿命常数，而另一个寿命常数对应于取决于孔的长寿命时间常数，格子。多量子阱结构以这样的方式形成，使得其寿命短的常数可以彼此同相，并且其长寿命时间常数可能彼此不同相。多个量子阱结构在组成上彼此不同地形成。

7. 发明授权

US5446293A Resonant tunneling opto-electronic device having a plurality of window layers 失效
标题翻译：具有多个窗口层的谐振隧道光电器件
公开(公告)号：US5446293A
公开(公告)日：1995-08-29
申请号：US338117
申请日：1994-11-09
申请人： Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
发明人： Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
IPC分类号： H01L31/10 , H01L31/0352 , H01L27/14 , H01L31/00
CPC分类号： B82Y10/00 , H01L31/0352
摘要： Disclosed is an operation principle and an epitaxial structure of resonant tunneling opto-electronic device. According to the present invention, the photo-generated holes stored in front of the double barrier quantum well structure by light illumination. As a result, a large potential drop occurs in the double barrier quantum well structure. And a peak signal of the opto-electronic resonant tunneling device is generated at a relatively lower voltage illumination to one generated before introducing the light into the device. An amount of photocurrent is 10.sup.3 times and over as compared to the conventional p-i-n diode because a resonant tunneling current is optically controlled by light illumination. So that, it is possible to drive peripheral circuit without use of additional amplifiers for amplifying an output signal from the opto-electronic device.
摘要翻译：公开了谐振隧道光电器件的工作原理和外延结构。根据本发明，通过光照射存储在双重阻挡量子阱结构前面的光生孔。结果，双重势垒量子阱结构中出现大的电位降。光电共振隧穿装置的峰值信号在相对较低的电压照明下产生，并将光引入装置之前产生。与传统的p-i-n二极管相比，光电流量是103倍以上，因为谐振隧穿电流是通过光照射来光学控制的。因此，可以驱动外围电路而不使用用于放大来自光电子器件的输出信号的附加放大器。

8. 发明申请

US20110075963A1 MICRO-RESONATOR SENSOR USING EVANESCENT WAVE OF TOTAL REFLECTION MIRROR 有权
公开(公告)号：US20110075963A1
公开(公告)日：2011-03-31
申请号：US12993777
申请日：2009-06-19
申请人： Young-Wan Choi , Doo Gun Kim
发明人： Young-Wan Choi , Doo Gun Kim
IPC分类号： G02B6/10
CPC分类号： G01N21/7746 , G01N21/552 , G01N2021/7779
摘要： A micro-resonator sensor using an evanescent wave of a total reflection mirror is disclosed. A main waveguide includes an input hole to which a optical signal is inputted and an output hole from which the optical signal is outputted, and a optical coupling region at which a portion of the optical signal inputted through the input hole is branched. A resonant waveguide includes a optical coupling waveguide optically coupled with the optical coupling region of the main waveguide to receive the branch optical signal branched from the main waveguide and a plurality of circumferential waveguides. The optical coupling waveguide and the plurality of circumferential waveguides are disposed in a polygonal shape. Optical path changing units are disposed at vertex regions to which the optical coupling waveguide and the circumferential waveguides are connected to reflect at least a portion of the branch optical signal inputted to the resonant waveguide so as to turn around within the resonant waveguide. At least one of the optical path changing units disposed at the vertex regions to which the circumferential waveguides are connected is a total reflection mirror with a receptor provided on the other side from the side on which the branch signal is inputted and combining with a measurement-subject material. The circumferential waveguide that inputs the branch optical signal to the total reflection mirror is disposed such that an incident angle relative to the total reflection mirror is larger than a total reflection threshold angle. Because the resonator is configured by using the total reflection mirrors, the micro-resonator sensor can be fabricated with an ultra-compact size without an excessive radiation loss. Also, because all the elements are integrated on a single wafer, the micro-resonator sensor can be fabricated as an on-chip, whereby an ultra-compact optical sensor module applicable to mobile terminals can be manufactured.

9. 发明授权

US5623140A Nonbiased bistable optical device having a lower mirror having a plurality of reflective layers repeatedly formed on a substrate 失效
标题翻译：具有下反射镜的非偏置双稳态光学器件，其具有在基板上重复形成的多个反射层
公开(公告)号：US5623140A
公开(公告)日：1997-04-22
申请号：US451059
申请日：1995-05-25
申请人： Young-Wan Choi , O-Kyun Kwon , El-Hang Lee
发明人： Young-Wan Choi , O-Kyun Kwon , El-Hang Lee
IPC分类号： G02F3/02 , H01J40/14
CPC分类号： G02F3/028
摘要： Disclosed is a nonbiased bistable optical device and a method for fabricating the device, which has a semi-insulating GaAs substrate; a lower mirror having a plurality of reflecting layers which are repeatedly formed on said substrate at least more than twelve times, each of said reflecting layers having a first reflecting film having a first refractive index on said substrate and a second reflecting film a second refractive index different from the first refractive index; a first contact layer formed on the lower mirror; a first buffer layer formed on the first contact layer; a multiple quantum well(MQW) having a plurality of shallow layers which are repeatedly formed, each of said shallow layers having a barrier and a shallow quantum well; a second buffer layer grown on said MQW; and a second contact layer formed on said second buffer layer. The device has an excellent bistablity even without an external applied voltage.
摘要翻译：公开了一种非偏置双稳态光学器件及其制造方法，该器件具有半绝缘GaAs衬底; 具有多个反射层的下反射镜，所述多个反射层在所述基板上反复形成至少十二次，每个所述反射层具有在所述基板上具有第一折射率的第一反射膜和第二反射膜，第二折射率不同于第一折射率; 形成在下反射镜上的第一接触层; 形成在所述第一接触层上的第一缓冲层; 具有重复形成的多个浅层的多量子阱（MQW），每个所述浅层具有阻挡层和浅量子阱; 在所述MQW上生长的第二缓冲层; 以及形成在所述第二缓冲层上的第二接触层。即使没有外部施加电压，该器件也具有优异的双稳态。

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