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91. 发明申请

US20080311508A1 PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用多种抗反射材料制备半导体器件的工艺
公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/20 , C23C16/00 , G03C1/735 , G03C1/73
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

92. 发明授权

US07326442B2 Antireflective composition and process of making a lithographic structure 有权
标题翻译：抗反射组合物和制备光刻结构的方法
公开(公告)号：US07326442B2
公开(公告)日：2008-02-05
申请号：US11180788
申请日：2005-07-14
申请人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
IPC分类号： G03F7/00 , B32B9/04
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译：一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。

93. 发明授权

US07256146B2 Method of forming a ceramic diffusion barrier layer 失效
标题翻译：形成陶瓷扩散阻挡层的方法
公开(公告)号：US07256146B2
公开(公告)日：2007-08-14
申请号：US11128493
申请日：2005-05-13
申请人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
发明人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
IPC分类号： H01L21/31
CPC分类号： H01L21/02282 , H01L21/02126 , H01L21/02222 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要： The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1
摘要翻译：本发明包括一种互连结构，其中包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层，其中陶瓷扩散阻挡层具有组成为N 其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 <= x <= 0.9，对于v + w + x + y + z = 1，0 <= y <= 0.7,0.01 <= z <= 0.8。陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。本发明还包括用于形成本发明的陶瓷扩散阻挡层的方法，该方法包括沉积具有组合物的组合物的聚合物预陶瓷的步骤其中0.1

94. 发明申请

US20070111509A1 POLYCARBOSILANE BURIED ETCH STOPS IN INTERCONNECT STRUCTURES 有权
标题翻译：互连结构中聚苯乙烯嵌入式蚀刻层
公开(公告)号：US20070111509A1
公开(公告)日：2007-05-17
申请号：US11619502
申请日：2007-01-03
申请人： Elbert Huang , Kaushik Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy Tyberg
发明人： Elbert Huang , Kaushik Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy Tyberg
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835 , Y10S438/97
摘要： Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05≦v≦0.8, 0≦w≦0.9, 0.05≦x≦0.8, 0≦y≦0.3, 0.05≦z≦0.08 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.
摘要翻译：本文描述了具有低介电常数的掩埋蚀刻停止层的互连结构和与产生这种掩埋蚀刻停止层有关的方法。本发明的互连结构包括掩埋的蚀刻停止层，其由具有下列成分的聚合物材料构成：其中X 1，X，Y，其中0.05 <= v <= 0.8,0 <= w <= 0.9,0.05 <= x <= 0.8,0 <= y <= 0.3,0.05 对于v + w + x + y + z = 1，z <= 0.08; 位于所述掩埋蚀刻停止层正下方的通孔层间电介质; 位于所述掩埋蚀刻停止层正上方的线级层间电介质; 以及导电穿过所述通孔级电介质，所述线级电介质和所述掩埋蚀刻停止层的金属特征。

95. 发明申请

US20070099122A1 Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 失效
标题翻译：反光膜界面，以恢复光刻处理中的横向磁波对比度
公开(公告)号：US20070099122A1
公开(公告)日：2007-05-03
申请号：US11265822
申请日：2005-11-03
申请人： Kafai Lai , Dirk Pfeiffer , Alan Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan Rosenbluth
IPC分类号： G03F7/20
CPC分类号： G03F7/70216
摘要： A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译：一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

96. 发明授权

US07187081B2 Polycarbosilane buried etch stops in interconnect structures 有权
标题翻译：聚碳硅烷掩埋蚀刻在互连结构中停止
公开(公告)号：US07187081B2
公开(公告)日：2007-03-06
申请号：US10699238
申请日：2003-10-31
申请人： Elbert E. Huang , Kaushik A. Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy S. Tyberg
发明人： Elbert E. Huang , Kaushik A. Kumar , Kelly Malone , Dirk Pfeiffer , Muthumanickam Sankarapandian , Christy S. Tyberg
IPC分类号： H01L29/40
CPC分类号： H01L21/76801 , H01L21/76807 , H01L21/76828 , H01L21/76829 , H01L21/76835 , Y10S438/97
摘要： Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05≦v≦0.8, 0≦w≦0.9, 0.05≦x≦0.8, 0≦y≦0.3, 0.05≦z≦0.8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.
摘要翻译：本文描述了具有低介电常数的掩埋蚀刻停止层的互连结构和与产生这种掩埋蚀刻停止层有关的方法。本发明的互连结构包括掩埋的蚀刻停止层，其由具有下列成分的聚合物材料构成：其中X 1，X，Y，其中0.05 <= v <= 0.8,0 <= w <= 0.9,0.05 <= x <= 0.8,0 <= y <= 0.3,0.05 对于v + w + x + y + z = 1，z <= 0.8; 位于所述掩埋蚀刻停止层正下方的通孔层间电介质; 位于所述掩埋蚀刻停止层正上方的线级层间电介质; 以及导电穿过所述通孔级电介质，所述线级电介质和所述掩埋蚀刻停止层的金属特征。

97. 发明申请

US20070015082A1 Process of making a lithographic structure using antireflective materials 审中-公开
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US20070015082A1
公开(公告)日：2007-01-18
申请号：US11180787
申请日：2005-07-14
申请人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina Babich , Sean Burns , Allen Gabor , Scott Halle , Arpan Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/26 , G03C5/00
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO 2主链的交联聚合物，发色团和对193nm或157nm辐射基本透明的透明有机基团。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

98. 发明授权

US06940173B2 Interconnect structures incorporating low-k dielectric barrier films 失效
标题翻译：包含低k电介质阻挡膜的互连结构
公开(公告)号：US06940173B2
公开(公告)日：2005-09-06
申请号：US10627794
申请日：2003-07-25
申请人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
发明人： Stephan A. Cohen , Stephen McConnell Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
IPC分类号： H01L20060101 , H01L21/00 , H01L21/312 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/532
CPC分类号： H01L21/02282 , H01L21/02126 , H01L21/02222 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要： The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦0.5, 0.01≦x≦0.9,0≦y≦0.7,0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1
摘要翻译：本发明包括一种互连结构，其中包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层，其中陶瓷扩散阻挡层具有组成为N 其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 <= 0.5,0.01 对于v + w + x + y + z = 1，x <= 0.9,0 <= y <= 0.7,0.01 <= z <= 0.8。陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。本发明还包括用于形成本发明的陶瓷扩散阻挡层的方法，该方法包括沉积具有组合物的组合物的聚合物预陶瓷的步骤其中0.1

99. 发明授权

US06929982B2 Patterning layers comprised of spin-on ceramic films 失效
标题翻译：图案层由旋涂陶瓷膜组成
公开(公告)号：US06929982B2
公开(公告)日：2005-08-16
申请号：US10915087
申请日：2004-08-10
申请人： Stephen M. Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
发明人： Stephen M. Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
IPC分类号： G03G13/06 , H01L20060101 , H01L21/00 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/44 , H01L23/48 , H05B6/64
CPC分类号： H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/31144 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/316 , Y10S430/146 , Y10T428/31663
摘要： The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05
摘要翻译：本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物前陶瓷前体膜转化成至少一个陶瓷层，其中陶瓷层具有Si N x O x O x O O的组成，其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.05 <= x <= 0.9,0 <= y <= 0.5,0.05 对于v + w + x + y + z = 1，<= z <= 0.8; 在陶瓷层顶部形成图案化的光刻胶; 图案化陶瓷层以暴露下面的衬底的区域，其中下面的衬底的剩余区域被图案化的陶瓷层保护; 并蚀刻下面的衬底的暴露区域。本发明的另一方面是具有下列组成的掩埋蚀刻停止层：对于v + w + x + y +，0.05

100. 发明申请

US20050064322A1 Water and aqueous base soluble antireflective coating/hardmask materials 有权
标题翻译：水和水性可溶性抗反射涂层/硬掩模材料
公开(公告)号：US20050064322A1
公开(公告)日：2005-03-24
申请号：US10666541
申请日：2003-09-19
申请人： Katherina Babich , Alfred Grill , Arpan Mahorowala , Dirk Pfeiffer
发明人： Katherina Babich , Alfred Grill , Arpan Mahorowala , Dirk Pfeiffer
IPC分类号： G03C1/76 , G03F7/075 , G03F7/09 , G03F7/11 , G03F7/16
CPC分类号： G03F7/11 , G03F7/075 , G03F7/091 , G03F7/167
摘要： A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second layer which includes an energy photoactive material.
摘要翻译：一种多层光刻结构，其包括基底，其主要表面上具有第一层，该第一层包括水和/或水溶性基质可溶性材料，其包括Ge，O和H以及任选的X，其中X是Si， N和F; 并且在第一层上设置包括能量光活性材料的第二层。

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