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1. 发明申请

US20130189843A1 SLURRY FOR PLANARIZING PHOTORESIST 审中-公开
标题翻译：用于平面化光刻胶的浆料
公开(公告)号：US20130189843A1
公开(公告)日：2013-07-25
申请号：US13747825
申请日：2013-01-23
申请人： You Wang , Wen-Chiang Tu , Lakshmanan Karuppiah , Yufei Chen
发明人： You Wang , Wen-Chiang Tu , Lakshmanan Karuppiah , Yufei Chen
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31058
摘要： A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.
摘要翻译：用于平版化光致抗蚀剂的浆料包括磨料颗粒，氧化剂，表面活化化学品和溶剂。

2. 发明申请

US20130186850A1 SLURRY FOR COBALT APPLICATIONS 审中-公开
标题翻译：浆料应用
公开(公告)号：US20130186850A1
公开(公告)日：2013-07-25
申请号：US13357535
申请日：2012-01-24
申请人： You Wang , Chenhao Ge , Yufei Chen , Yuchun Wang , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： You Wang , Chenhao Ge , Yufei Chen , Yuchun Wang , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： C09K13/00 , C09K13/02 , H05K3/26
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L23/53238 , H01L23/53257 , H01L2924/0002 , H05K3/045 , H05K3/107 , H01L2924/00
摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.
摘要翻译：用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂，和溶剂。浆液的pH为7-12。

3. 发明授权

US08586481B2 Chemical planarization of copper wafer polishing 有权
标题翻译：铜晶片抛光的化学平面化
公开(公告)号：US08586481B2
公开(公告)日：2013-11-19
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

4. 发明申请

US20120064801A1 Feedback Control of Polishing Using Optical Detection of Clearance 有权
标题翻译：使用光学检测清除的抛光反馈控制
公开(公告)号：US20120064801A1
公开(公告)日：2012-03-15
申请号：US13223159
申请日：2011-08-31
申请人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： B24B49/00
CPC分类号： B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译：控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。在抛光期间，用原位监测系统监测基底以产生测量序列。测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。使用至少一个调整的抛光压力来抛光第二基底。

5. 发明申请

US20110294293A1 CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
标题翻译：铜波抛光的化学平面化
公开(公告)号：US20110294293A1
公开(公告)日：2011-12-01
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

6. 发明授权

US08210900B2 Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery 有权
标题翻译：化学机械抛光的抛光和缺陷控制使用实时可调添加剂递送
公开(公告)号：US08210900B2
公开(公告)日：2012-07-03
申请号：US12263237
申请日：2008-10-31
申请人： Wen-Chiang Tu , You Wang , Yuchun Wang , Lakshmanan Karuppiah
发明人： Wen-Chiang Tu , You Wang , Yuchun Wang , Lakshmanan Karuppiah
IPC分类号： B24B49/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.
摘要翻译：一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。在一个实施例中，提供了一种处理半导体衬底的方法。该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

7. 发明授权

US09073169B2 Feedback control of polishing using optical detection of clearance 有权
标题翻译：使用光学检测间隙的抛光反馈控制
公开(公告)号：US09073169B2
公开(公告)日：2015-07-07
申请号：US13223159
申请日：2011-08-31
申请人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： G06F19/00 , H01L21/00 , B24B49/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B37/30 , B24B49/12 , G01B11/06
CPC分类号： B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译：控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。在抛光期间，用原位监测系统监测基底以产生测量序列。测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。使用至少一个调整的抛光压力来抛光第二基底。

8. 发明申请

US20100112903A1 DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY 有权
标题翻译：使用实时可调式添加剂进行化学机械抛光的抛光和缺陷控制
公开(公告)号：US20100112903A1
公开(公告)日：2010-05-06
申请号：US12263237
申请日：2008-10-31
申请人： WEN-CHIANG TU , You Wang , Yuchun Wang , Lakshmanan Karuppiah
发明人： WEN-CHIANG TU , You Wang , Yuchun Wang , Lakshmanan Karuppiah
IPC分类号： B24B49/04 , B24B7/22 , B24B57/02
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.
摘要翻译：一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。在一个实施例中，提供了一种处理半导体衬底的方法。该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

9. 发明申请

US20070158207A1 Methods for electrochemical processing with pre-biased cells 审中-公开
标题翻译：使用预偏置电池进行电化学处理的方法
公开(公告)号：US20070158207A1
公开(公告)日：2007-07-12
申请号：US11326647
申请日：2006-01-06
申请人： Jie Diao , Renhe Jia , You Wang , Gerald Alonzo , Stan Tsai , Lakshmanan Karuppiah
发明人： Jie Diao , Renhe Jia , You Wang , Gerald Alonzo , Stan Tsai , Lakshmanan Karuppiah
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , B24B53/017 , C25F1/00 , C25F3/02
摘要： A method for electrochemically processing a substrate is provided. In one embodiment, the method includes performing a conditioning procedure on a processing pad having a plurality of process cells, energizing the process cells by applying a voltage to the conditioned processing pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized process cells. In another embodiment, a method for polishing a substrate includes placing an unused conductive pad having a plurality of process cells on a platen of a processing system, breaking in the pad on the platen, energizing the process cells by applying a voltage to the broken-in pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized cells.
摘要翻译：提供了一种用于电化学处理衬底的方法。在一个实施例中，该方法包括在具有多个处理单元的处理垫上执行调节程序，通过向经调节的处理垫施加电压来激励处理单元，将其上布置有至少一个导电层的基板放置在通电并且在通电的处理单元中去除导电层的至少一部分。在另一个实施例中，用于抛光衬底的方法包括将具有多个处理单元的未使用的导电焊盘放置在处理系统的压板上，在压板上的焊盘中断开，在衬垫中，将具有至少其上设置有导电层的衬底放置在通电焊盘上，以及去除通电电池中的至少一部分导电层。

10. 发明授权

US07422982B2 Method and apparatus for electroprocessing a substrate with edge profile control 失效
标题翻译：用边缘轮廓控制对基底进行电处理的方法和装置
公开(公告)号：US07422982B2
公开(公告)日：2008-09-09
申请号：US11483843
申请日：2006-07-07
申请人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
发明人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B23H5/08 , C25D17/10 , C25D17/12 , C25D21/12
摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.
摘要翻译：提供了一种用于电子处理衬底的方法和装置。在一个实施例中，用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极施加到第一电极的偏压。在一个实施例中，第一电极被涂覆有惰性材料，并且以这种方式获得相同的抛光速率，并且施加到第一电极的较低电位电平。

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