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1. 发明授权

US06887340B2 Etch rate uniformity 有权
标题翻译：蚀刻速率均匀
公开(公告)号：US06887340B2
公开(公告)日：2005-05-03
申请号：US10293898
申请日：2002-11-12
申请人： Rajinder Dhindsa , Bobby Kadkhodayan
发明人： Rajinder Dhindsa , Bobby Kadkhodayan
IPC分类号： H01J37/32 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32623 , H01J37/32642 , H01J37/32697
摘要： An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. The confinement rings are disposed between the first electrode and the second electrode. The chamber is formed of an electrically conductive material coupled to the source. The focus ring substantially encircles the second electrode and electrically insulates the second electrode. The shield substantially encircles the focus ring. The distance between an edge of the second electrode and an edge of the shield is at least less than the distance between the edge of the second electrode and an edge of the first electrode. The shield is formed of an electrically conductive material coupled to the source of fixed potential.
摘要翻译：蚀刻装置具有包围第一电极，第二电极，限制环，聚焦环和屏蔽的室。第一电极耦合到固定电位源。第二电极耦合到双频RF电源。约束环设置在第一电极和第二电极之间。该室由耦合到源的导电材料形成。聚焦环基本上环绕第二电极并使第二电极电绝缘。护罩基本上环绕聚焦环。第二电极的边缘和屏蔽边缘之间的距离至少小于第二电极的边缘与第一电极的边缘之间的距离。屏蔽由耦合到固定电位源的导电材料形成。

2. 发明申请

US20090200269A1 PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE 有权
标题翻译：一种等离子体加工室的保护涂层及其使用方法
公开(公告)号：US20090200269A1
公开(公告)日：2009-08-13
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C14/34 , C23C16/00 , C23C14/00 , H05H1/24 , C23F1/08
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

3. 发明授权

US08522716B2 Protective coating for a plasma processing chamber part and a method of use 有权
标题翻译：用于等离子体处理室部件的保护涂层和使用方法
公开(公告)号：US08522716B2
公开(公告)日：2013-09-03
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23F1/08 , C23C14/34 , C23C16/00 , H05H1/24
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

4. 发明授权

US09928995B2 Methods for preventing plasma un-confinement events in a plasma processing chamber 有权
公开(公告)号：US09928995B2
公开(公告)日：2018-03-27
申请号：US12820020
申请日：2010-06-21
申请人： Andreas Fischer , Rajinder Dhindsa
发明人： Andreas Fischer , Rajinder Dhindsa
IPC分类号： B23P6/00 , H01J37/32
CPC分类号： H01J37/32495 , H01J37/32082 , H01J37/32623 , Y10T29/49718
摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

5. 发明授权

US09230779B2 Methods and apparatus for correcting for non-uniformity in a plasma processing system 有权
标题翻译：用于校正等离子体处理系统中的不均匀性的方法和装置
公开(公告)号：US09230779B2
公开(公告)日：2016-01-05
申请号：US13423279
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa
发明人： Sang Ki Nam , Rajinder Dhindsa
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/509 , A23G3/26 , B05B12/00 , B05B13/04 , H01L21/67
CPC分类号： H01J37/32183 , A23G3/26 , B05B12/00 , B05B13/0431 , B05B13/0452 , C23C16/4401 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32009 , H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32935 , H01J37/32972 , H01J37/3299 , H01L21/67069 , H01L21/6715 , H01L21/67253
摘要： A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.
摘要翻译：公开了一种具有等离子体处理室的等离子体处理系统，其包括室壁和腔室衬套中的至少一个。等离子体处理系统包括围绕室表面的圆周设置的多个接地带，室表面是等离子体处理室的室壁和室衬套之一。等离子处理系统还包括耦合到多个接地带的至少第一接地带的至少第一阻抗器件，其中多个接地带的第二接地带没有设置具有相同阻抗的第二阻抗器件值作为第一阻抗器件。

6. 发明授权

US09184028B2 Dual plasma volume processing apparatus for neutral/ion flux control 有权
标题翻译：用于中性/离子通量控制的双等离子体体积处理装置
公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
申请人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

7. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

8. 发明授权

US08898889B2 Chuck assembly for plasma processing 有权
标题翻译：用于等离子体处理的卡盘组件
公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

9. 发明授权

US08709202B2 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US08709202B2
公开(公告)日：2014-04-29
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

10. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

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