专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09928995B2 Methods for preventing plasma un-confinement events in a plasma processing chamber 有权
公开(公告)号：US09928995B2
公开(公告)日：2018-03-27
申请号：US12820020
申请日：2010-06-21
申请人： Andreas Fischer , Rajinder Dhindsa
发明人： Andreas Fischer , Rajinder Dhindsa
IPC分类号： B23P6/00 , H01J37/32
CPC分类号： H01J37/32495 , H01J37/32082 , H01J37/32623 , Y10T29/49718
摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

2. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

3. 发明授权

US08262847B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08262847B2
公开(公告)日：2012-09-11
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

4. 发明申请

US20110059615A1 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 有权
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：US20110059615A1
公开(公告)日：2011-03-10
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

5. 发明申请

US20080020574A1 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US20080020574A1
公开(公告)日：2008-01-24
申请号：US11487999
申请日：2006-07-18
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

6. 发明授权

US09536711B2 Method and apparatus for DC voltage control on RF-powered electrode 有权
标题翻译： RF电源电压直流电压控制方法及装置
公开(公告)号：US09536711B2
公开(公告)日：2017-01-03
申请号：US12047820
申请日：2008-03-13
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及负直流电源通过RF滤波器控制等离子体处理参数。

7. 发明申请

US20080242085A1 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses 有权
标题翻译：用于半导体材料处理装置的具有低颗粒性能的喷头电极和喷头电极组件
公开(公告)号：US20080242085A1
公开(公告)日：2008-10-02
申请号：US11730298
申请日：2007-03-30
申请人： Andreas Fischer , Rajinder Dhindsa
发明人： Andreas Fischer , Rajinder Dhindsa
IPC分类号： H01L21/44 , C23C16/44 , H01L21/302
CPC分类号： C23C16/45565 , C23C16/4557 , C23C16/45574
摘要： Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.
摘要翻译：公开了一种用于半导体材料处理装置的喷头电极。喷头电极的实施例包括彼此结合的顶部和底部电极。顶部电极包括一个或多个增压室。底部电极包括等离子体暴露的底部表面和与气室流体连通的多个气体孔。还公开了包括从顶板柔性地悬挂的喷头电极的喷头电极组件。淋浴头电极组件可与温度控制元件流体连通，空间上与喷头电极分离，以控制喷头电极的温度。还公开了在包括喷头电极组件的等离子体处理室中处理衬底的方法。

8. 发明申请

US20080237187A1 METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE 有权
标题翻译：用于诱导直流电压在电极上的方法和装置
公开(公告)号：US20080237187A1
公开(公告)日：2008-10-02
申请号：US12047813
申请日：2008-03-13
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065 , H05H1/24 , H01L21/30
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译：公开了一种处理衬底的方法。该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

9. 发明申请

US20070199658A1 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US20070199658A1
公开(公告)日：2007-08-30
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： B08B6/00 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

10. 发明授权

US08911637B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08911637B2
公开(公告)日：2014-12-16
申请号：US13592262
申请日：2012-08-22
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式