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1. 发明授权

US06887340B2 Etch rate uniformity 有权
标题翻译：蚀刻速率均匀
公开(公告)号：US06887340B2
公开(公告)日：2005-05-03
申请号：US10293898
申请日：2002-11-12
申请人： Rajinder Dhindsa , Bobby Kadkhodayan
发明人： Rajinder Dhindsa , Bobby Kadkhodayan
IPC分类号： H01J37/32 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32623 , H01J37/32642 , H01J37/32697
摘要： An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. The confinement rings are disposed between the first electrode and the second electrode. The chamber is formed of an electrically conductive material coupled to the source. The focus ring substantially encircles the second electrode and electrically insulates the second electrode. The shield substantially encircles the focus ring. The distance between an edge of the second electrode and an edge of the shield is at least less than the distance between the edge of the second electrode and an edge of the first electrode. The shield is formed of an electrically conductive material coupled to the source of fixed potential.
摘要翻译：蚀刻装置具有包围第一电极，第二电极，限制环，聚焦环和屏蔽的室。第一电极耦合到固定电位源。第二电极耦合到双频RF电源。约束环设置在第一电极和第二电极之间。该室由耦合到源的导电材料形成。聚焦环基本上环绕第二电极并使第二电极电绝缘。护罩基本上环绕聚焦环。第二电极的边缘和屏蔽边缘之间的距离至少小于第二电极的边缘与第一电极的边缘之间的距离。屏蔽由耦合到固定电位源的导电材料形成。

2. 发明授权

US08522716B2 Protective coating for a plasma processing chamber part and a method of use 有权
标题翻译：用于等离子体处理室部件的保护涂层和使用方法
公开(公告)号：US08522716B2
公开(公告)日：2013-09-03
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23F1/08 , C23C14/34 , C23C16/00 , H05H1/24
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

3. 发明申请

US20110021031A1 HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS 有权
标题翻译：高寿命硅氧化硅二氧化硅等离子体加工组件
公开(公告)号：US20110021031A1
公开(公告)日：2011-01-27
申请号：US12740091
申请日：2008-10-27
申请人： Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K.Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
发明人： Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K.Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
IPC分类号： H01L21/3065 , C23F1/08 , C23F1/00 , B29C43/02
CPC分类号： C04B35/593 , C04B2235/3206 , C04B2235/3418 , C04B2235/72 , C04B2235/77 , H01J37/32467 , H01L21/3065
摘要： A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.
摘要翻译：提供了一种增加等离子体蚀刻室清洁之间的平均时间和室部件寿命的方法。在使用暴露于离子轰击和/或电离卤素气体的至少一种烧结氮化硅组件的同时，半导体衬底在腔室中进行等离子体蚀刻。烧结氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。提供了包括烧结氮化硅组分的等离子体处理室。提供了一种在等离子体处理期间减少硅衬底表面上的金属污染的方法，该等离子体处理装置包括一个或多个烧结氮化硅组分。一种在等离子体蚀刻室中制造暴露于离子轰击和/或等离子体侵蚀的部件的方法，包括使由高纯度氮化硅和二氧化硅组成的粉末组合物成形并致密化成形部件。

4. 发明授权

US08622021B2 High lifetime consumable silicon nitride-silicon dioxide plasma processing components 有权
标题翻译：高寿命消耗性氮化硅 - 二氧化硅等离子体处理部件
公开(公告)号：US08622021B2
公开(公告)日：2014-01-07
申请号：US12740091
申请日：2008-10-27
申请人： Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K. Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
发明人： Travis R. Taylor , Mukund Srinivasan , Bobby Kadkhodayan , K. Y. Ramanujam , Biljana Mikijelj , Shanghua Wu
IPC分类号： C23C16/50 , C23C16/22 , H01L21/306 , C23F1/00 , B22F3/04 , B22F3/15 , C23C16/44
CPC分类号： C04B35/593 , C04B2235/3206 , C04B2235/3418 , C04B2235/72 , C04B2235/77 , H01J37/32467 , H01L21/3065
摘要： A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.
摘要翻译：提供了一种增加等离子体蚀刻室清洁之间的平均时间和室部件寿命的方法。在使用暴露于离子轰击和/或电离卤素气体的至少一种烧结氮化硅组件的同时，半导体衬底在腔室中进行等离子体蚀刻。烧结氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。提供了包括烧结氮化硅组分的等离子体处理室。提供了一种在等离子体处理期间减少硅衬底表面上的金属污染的方法，该等离子体处理装置包括一个或多个烧结氮化硅组分。一种在等离子体蚀刻室中制造暴露于离子轰击和/或等离子体侵蚀的部件的方法，包括使由高纯度氮化硅和二氧化硅组成的粉末组合物成形并致密化成形部件。

5. 发明申请

US20090200269A1 PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE 有权
标题翻译：一种等离子体加工室的保护涂层及其使用方法
公开(公告)号：US20090200269A1
公开(公告)日：2009-08-13
申请号：US12368093
申请日：2009-02-09
申请人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
发明人： Bobby Kadkhodayan , Jon McChesney , Eric Pape , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C14/34 , C23C16/00 , C23C14/00 , H05H1/24 , C23F1/08
CPC分类号： H01L21/3065 , C23C14/564 , C23C16/4401 , C23C16/505 , H01J37/16 , H01J37/32091 , H01J37/32495 , H01J37/32568 , H01J2237/0213 , H01L21/02104 , H01L21/67017 , H01L21/67069
摘要： A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.
摘要翻译：用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

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