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1. 发明授权

US4404580A Light activated semiconductor device 失效
标题翻译：光激活半导体器件
公开(公告)号：US4404580A
公开(公告)日：1983-09-13
申请号：US172072
申请日：1980-07-24
申请人： Nobutake Konishi , Masayoshi Naito , Tsutomu Yatsuo , Yoshio Terasawa
发明人： Nobutake Konishi , Masayoshi Naito , Tsutomu Yatsuo , Yoshio Terasawa
IPC分类号： H01L29/74 , H01L31/111 , H01L29/12 , H01L29/14
CPC分类号： H01L31/1113 , H01L29/74
摘要： A light activated thyristor with high dv/dt capability is provided by disposing first and second thyristors, one a primary and the other a pilot thyristor, in a semiconductor body having first and second major surface. The two thyristors have common first emitter, first base, and second base regions, and have spaced apart second emitter regions adjoining the second major surface of the body. The second emitter region of the second thyristor consists of first and second portions, first portion abutting the second base region of the second thyristor to create a ratarded electrical field. An exposed portion of the second major surface at the second emitter region of the second thyristor activates the second thyristor when electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body strikes this exposed portion. The cathode electrode makes ohmic contact with the second emitter region of the first thyristor, and the anode electrode makes ohmic contact with the common first emitter regions. A floating contact also makes ohmic contact to the second emitter region of the second thyristor and the common second base region between the thyristors.
摘要翻译：具有高dv / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中设置第一和第二晶闸管，一个一个导电晶闸管和另一个晶闸管。两个晶闸管具有共同的第一发射极，第一基极和第二基极区域，并且具有邻接主体的第二主表面的间隔开的第二发射极区域。第二晶闸管的第二发射极区域由第一和第二部分组成，第一部分邻接第二晶闸管的第二基极区域以产生经过电压的电场。当第二晶闸管的第二发射极区域处的第二主表面的暴露部分激活第二晶闸管，当基本上对应于半导体主体的能带隙的波长的电磁辐射撞击该暴露部分时。阴极电极与第一晶闸管的第二发射极区域欧姆接触，并且阳极电极与共同的第一发射极区域欧姆接触。浮动接触还使第二晶闸管的第二发射极区域和晶闸管之间的公共第二基极区域欧姆接触。

2. 发明授权

US4682199A High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer 失效
标题翻译：具有优化的阴极基底层的掺杂，厚度和薄层电阻率的高压晶闸管
公开(公告)号：US4682199A
公开(公告)日：1987-07-21
申请号：US489505
申请日：1983-04-28
申请人： Tsutomu Yatsuo , Naohiro Momma , Masayoshi Naito , Masahiro Okamura
发明人： Tsutomu Yatsuo , Naohiro Momma , Masayoshi Naito , Masahiro Okamura
IPC分类号： H01L29/10 , H01L29/74
CPC分类号： H01L29/7428 , H01L29/102
摘要： In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.
摘要翻译：在包括具有相邻pnpn四层的半导体本体和相对的阳极和阴极电极以及为半导体本体提供的栅电极的高压晶闸管中，杂质浓度高于另一半导体的p基极和n基区中的一个在一个基极区域和相邻的发射极区域之间的结的附近具有不大于8×10 15原子/ cm 3的杂质浓度，并且朝向另一个连续的基极区域具有逐渐降低的梯度。一个基本区域的薄层电阻为500至1500欧姆/平方厘米。可以确保高电压，大直径和大电流晶闸管的实现。

3. 发明授权

US4388635A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US4388635A
公开(公告)日：1983-06-14
申请号：US164946
申请日：1980-07-01
申请人： Atsuo Watanabe , Masayoshi Naito , Tsutomu Yatsuo , Masahiro Okamura
发明人： Atsuo Watanabe , Masayoshi Naito , Tsutomu Yatsuo , Masahiro Okamura
IPC分类号： H01L29/06 , H01L29/40 , H01L29/74
CPC分类号： H01L29/408 , H01L29/0638 , H01L29/0661
摘要： A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.
摘要翻译：高击穿电压半导体器件的新颖结构具有一对主表面，其上形成有一对主电极，并且在一对主表面之间形成有PN结被暴露的侧表面覆盖的PN结钝化材料。提供了一种导电构件的辅助电极，其设置在半导体衬底的主表面的外围边缘的外侧，并与钝化材料接触并与主电极电连接。当在一对主电极之间施加用于反向偏置PN结的电压时，通过在钝化材料中建立的电场来收集钝化材料中的离子，从而防止半导体衬底的表面上的击穿劣化。

4. 发明授权

US4542398A Semiconductor devices of multi-emitter type 失效
标题翻译：多发射型半导体器件
公开(公告)号：US4542398A
公开(公告)日：1985-09-17
申请号：US621370
申请日：1984-06-18
申请人： Tsutomu Yatsuo , Masayoshi Naito , Takahiro Nagano , Tomio Yasuda , Jin Onuki , Mitsuo Yanagi , Fumio Sato
发明人： Tsutomu Yatsuo , Masayoshi Naito , Takahiro Nagano , Tomio Yasuda , Jin Onuki , Mitsuo Yanagi , Fumio Sato
IPC分类号： H01L29/74 , H01L21/52 , H01L23/48 , H01L23/482 , H01L29/08 , H01L29/423 , H01L29/744
CPC分类号： H01L23/4824 , H01L24/72 , H01L29/0804 , H01L29/42304 , H01L29/42308 , H01L29/744 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/1301 , H01L2924/19043
摘要： A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.
摘要翻译：多射极型半导体器件，即具有这样一种布置的半导体器件，其中大部分发射极区域被栅极区域分开并被其包围。在半导体器件中，适于向栅电极施加外部控制信号的部件采取闭环形状，并且大部分发射极区域布置在环路的两侧。这种布置确保即使当发射极区域的数量增加到很大程度时，各个发射极区域也可以应用均匀的控制信号，从而防止关断特性的劣化。

5. 发明授权

US4223328A Field controlled thyristor with dual resistivity field layer 失效
标题翻译：具有双电阻率场层的场控晶闸管
公开(公告)号：US4223328A
公开(公告)日：1980-09-16
申请号：US911311
申请日：1978-06-01
申请人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
发明人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
IPC分类号： H01L29/80 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066 , H01L29/167
摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.
摘要翻译：公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域，连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高到基地区。场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

6. 发明授权

US5107307A Semiconductor device for control of light 失效
标题翻译：用于控制光的半导体器件
公开(公告)号：US5107307A
公开(公告)日：1992-04-21
申请号：US742523
申请日：1991-08-07
申请人： Hidekatsu Onose , Michio Ohue , Masayoshi Naito
发明人： Hidekatsu Onose , Michio Ohue , Masayoshi Naito
IPC分类号： G02F1/015 , G02F1/017 , G02F1/21
CPC分类号： G02F1/218 , B82Y20/00 , G02F1/017 , G02F2001/0152 , G02F2001/0156
摘要： A semiconductor optical modulator is provided wherein very thin films of two kinds of semiconductors having different band gaps are laminated alternately to form a multi-quantum well (MQW) structure, also called a super-lattice structure, and current is injected into the MQW structure to change the corresponding optical absorption and refractive index characteristic thereof so that a sufficient on/off ratio can be obtained.

7. 发明授权

US4107731A Silicon doped with cadmium to reduce lifetime 失效
标题翻译：掺杂镉的硅，以减少寿命
公开(公告)号：US4107731A
公开(公告)日：1978-08-15
申请号：US668400
申请日：1976-03-19
申请人： Masayoshi Naito , Tatsuya Kamei
发明人： Masayoshi Naito , Tatsuya Kamei
IPC分类号： H01L21/322 , H01L29/167 , H01L29/744 , H01L29/861
CPC分类号： H01L29/167 , Y10S438/904 , Y10S438/917
摘要： A semiconductor device is doped with a multiple acceptor impurity having a monovalent energy level for forming a recombination center of carriers within the semiconductor body, and at least one multivalent energy level for capturing carriers within a depletion layer of a PN junction of the semiconductor body.
摘要翻译：半导体器件掺杂有具有一价能级的多受体杂质，用于形成半导体本体内的载流子的复合中心，以及至少一个多价能级，用于捕获半导体主体的PN结的耗尽层内的载流子。

8. 发明授权

US5841946A Chaotic character evaluating apparatus and method of the same and processing apparatus of resulting the chaotic character evaluation 失效
标题翻译：混沌字符评估装置及其方法及其处理装置的混沌特征评价
公开(公告)号：US5841946A
公开(公告)日：1998-11-24
申请号：US348109
申请日：1994-11-25
申请人： Masayoshi Naito , Naoki Tanaka , Hiroshi Okamoto , Masahiro Kayama , Yasuo Morooka
发明人： Masayoshi Naito , Naoki Tanaka , Hiroshi Okamoto , Masahiro Kayama , Yasuo Morooka
IPC分类号： G06F17/10 , G06F15/18
CPC分类号： G06F17/10
摘要： A chaotic character evaluating apparatus includes a processor for predicting future variation in sequential data and a processing for determining a degree of accuracy of the prediction, a processor for predicting variation of the sequential data in reverse and a processor for determining a degree of accuracy of the prediction, and a processing for comparing the degrees of accuracy with each other. If the degrees of the accuracy differ from each other, the variation of the sequential data is determined to be attributable to chaos, while when the degrees of accuracy are substantially equal to each other, the variation in the sequential data is determined to be attributable to noise. Further, a control apparatus for generating a control value from a feedback signal output from an object under control and having chaotic components eliminated is realized. Thus, it is possible to easily and accurately determine whether variation in the sequential data is attributable to chaos or noise.
摘要翻译：混沌字符评估装置包括用于预测顺序数据中的未来变化的处理器和用于确定预测的准确度的处理，用于预测相反的顺序数据的变化的处理器和用于确定顺序数据的准确度的处理器预测和用于将准确度彼此进行比较的处理。如果准确度的差异不同，则顺序数据的变化被确定为可归因于混沌，而当精度度基本相等时，顺序数据的变化被确定为归因于噪声。此外，实现了从控制对象输出的反馈信号中产生控制值并且消除了混沌分量的控制装置。因此，可以容易且准确地确定顺序数据的变化是否归因于混沌或噪声。

9. 发明授权

US4235245A Device for picking up tissues from a body cavity 失效
标题翻译：从体腔拾取组织的装置
公开(公告)号：US4235245A
公开(公告)日：1980-11-25
申请号：US958622
申请日：1978-11-08
申请人： Masayoshi Naito
发明人： Masayoshi Naito
IPC分类号： A61B1/00 , A61B10/00 , A61B10/02 , A61B10/04 , A61B17/32 , G01N33/48
CPC分类号： A61B10/04 , A61B2010/0216 , A61B2017/320012
摘要： A device for picking up tissues comprises a flexible outer sheath, an extension wire extending through the outer sheath, a connector fixed by one end of the wire and having an outer diameter larger than the inner diameter of the outer sheath for abutting on one end of the outer sheath, a tissue picking-up section connected to said one end of the wire by the connector, a wire holding section for holding the other end of the extension wire and receiving the other end of the outer sheath, a chamber formed in the wire holding section, and a compression spring disposed in the wire holding section for resiliently urging the other end of the outer sheath toward the tissue picking-up section. The device is inserted into an endoscope disposed in a body cavity, and its outer sheath can be easily bent according to the shape of the body cavity.
摘要翻译：用于拾取组织的装置包括柔性外护套，延伸穿过外护套的延伸线，由导线的一端固定的连接器，其外径大于外护套的内径，用于邻接在外护套的一端所述外护套，通过所述连接器连接到所述线的所述一端的组织拾取部，用于保持所述延长线的另一端并且接收所述外护套的另一端的线保持部，形成在所述外护套中的腔线保持部，以及设置在线保持部中的压缩弹簧，用于将外护套的另一端弹性地推向组织拾取部。该装置被插入到设置在体腔内的内窥镜中，其外护套可以根据体腔的形状容易地弯曲。

10. 发明授权

US5420663A Apparatus for exposing peripheral portion of substrate 失效
标题翻译：用于暴露衬底的周边部分的装置
公开(公告)号：US5420663A
公开(公告)日：1995-05-30
申请号：US210275
申请日：1994-03-18
申请人： Masao Nakajima , Masayoshi Naito
发明人： Masao Nakajima , Masayoshi Naito
IPC分类号： G03F7/20 , G03B27/48 , G03B27/50
CPC分类号： G03F7/2022
摘要： An exposure apparatus for exposing a peripheral portion of a substrate to light comprises a rotating member for rotating a substrate to which a resist is applied, an irradiating system for irradiating the substrate with light which is sensed by the resist, a position detecting system for detecting a relative position between the light and the substrate in a radial direction of the substrate, a moving system for making a relative movement between the light and the substrate in the radial direction of the substrate, a periphery detecting member for detecting outer-periphery information corresponding to a shape of an outer periphery of the substrate, a control system for servo-controlling the moving system in accordance with the outer periphery of the substrate to make the width of the light emitted on the substrate constant, a characteristic detecting member for detecting a specific part of the peripheral portion of the substrate, and a control characteristic changing member for changing a control quantity of the control system at the specific part of the peripheral portion of the substrate.
摘要翻译：用于将基板的周边部分曝光的曝光装置包括用于旋转施加有抗蚀剂的基板的旋转构件，用于通过由抗蚀剂感测的光照射基板的照射系统，用于检测的位置检测系统在基板的径向方向上的光和基板之间的相对位置，用于在基板的径向方向上在光和基板之间进行相对移动的移动系统，用于检测对应于外部信息的外周信息的周边检测部件基板的外周的形状，根据所述基板的外周对所述移动体进行伺服控制以使所述基板的光的宽度恒定的控制系统，检测所述基板的特性检测部件基板的外围部分的特定部分，以及用于改变的控制特性变化部件在基板周边部分的特定部分处的控制系统的控制量。

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