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1. 发明授权

US08641480B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08641480B2
公开(公告)日：2014-02-04
申请号：US13036114
申请日：2011-02-28
申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
发明人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
IPC分类号： B24B1/00
CPC分类号： B24B1/00 , B24B55/00
摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.
摘要翻译：抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

2. 发明授权

US08445360B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08445360B2
公开(公告)日：2013-05-21
申请号：US13027551
申请日：2011-02-15
申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
发明人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L21/02038 , B24B9/065 , B24B21/002 , B24B37/042 , H01L21/02087 , H01L21/304 , H01L21/76256
摘要： A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
摘要翻译：一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。该方法包括在第一旋转速度旋转器件基板的同时将第一研磨带压靠在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板的周边部分中的沉积膜，暴露下面的硅。在第二旋转速度旋转器件基板的同时，将第二研磨带压在位于器件基板的周边部分中的暴露的硅上，从而将硅抛光到预定的深度。

3. 发明申请

US20110207294A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110207294A1
公开(公告)日：2011-08-25
申请号：US13027551
申请日：2011-02-15
申请人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
发明人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
IPC分类号： H01L21/762
CPC分类号： H01L21/02038 , B24B9/065 , B24B21/002 , B24B37/042 , H01L21/02087 , H01L21/304 , H01L21/76256
摘要： A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
摘要翻译：一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。该方法包括：在第一旋转速度旋转器件基板的同时，将第一研磨带压在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板周边部分的沉积膜并暴露下面的硅; 并且在第二旋转速度旋转所述装置基板的同时将第二研磨带压靠在所述装置基板的周边部分中的暴露的硅上，从而将所述硅抛光至预定的深度。

4. 发明申请

US20110217906A1 POLISHING APPARATUS AND POLISHING METHOD 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US20110217906A1
公开(公告)日：2011-09-08
申请号：US13036114
申请日：2011-02-28
申请人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
发明人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
IPC分类号： B24B1/00 , B24B55/00
CPC分类号： B24B1/00 , B24B55/00
摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.
摘要翻译：抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

5. 发明申请

US20110256811A1 POLISHING METHOD 审中-公开
标题翻译：抛光方法
公开(公告)号：US20110256811A1
公开(公告)日：2011-10-20
申请号：US13080821
申请日：2011-04-06
申请人： Masayuki NAKANISHI , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
发明人： Masayuki NAKANISHI , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
IPC分类号： B24B1/00
CPC分类号： B24B21/002 , B24B9/065 , B24B21/04 , B24B37/042
摘要： A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.
摘要翻译：抛光方法可以获得良好的抛光轮廓，其例如不会导致半导体层从硅衬底剥离。抛光方法包括：将抛光头定位在旋转基板的边缘部分中的抛光开始位置上方的位置; 降低抛光头的抛光工具，直到研磨工具与旋转基板的边缘部分中的抛光开始位置接触，并且抛光工具和抛光开始位置之间的压力达到设定压力; 允许抛光工具在抛光开始位置停留预定的时间量; 然后将抛光头朝向基板的周缘移动，同时保持抛光工具在旋转基板的边缘部分处于设定压力。

6. 发明授权

US07744445B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US07744445B2
公开(公告)日：2010-06-29
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

7. 发明申请

US20090017730A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20090017730A1
公开(公告)日：2009-01-15
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00 , B24B21/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

8. 发明申请

US20060068684A1 Polishing method and polishing system 失效
标题翻译：抛光方法和抛光系统
公开(公告)号：US20060068684A1
公开(公告)日：2006-03-30
申请号：US11231755
申请日：2005-09-22
申请人： Takeo Kubota
发明人： Takeo Kubota
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： B24B37/0056 , B24B37/042 , B24B49/12 , B24B57/02
摘要： A polishing method includes supplying a slurry onto a pad disposed above a turntable while rotating the turntable, and polishing a workpiece disposed on the pad by pressing the workpiece to the pad, and detecting an ion concentration of a specific ion included in the slurry on the pad by using an ion test paper during the polishing.
摘要翻译：抛光方法包括在旋转转盘的同时将浆料供给到设置在转台上方的垫上，并且通过将工件压入垫来抛光设置在垫上的工件，并且检测浆料中包含的特定离子的离子浓度在抛光过程中使用离子测试纸垫。

9. 发明申请

US20090191706A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090191706A1
公开(公告)日：2009-07-30
申请号：US12343265
申请日：2008-12-23
申请人： Takeo Kubota
发明人： Takeo Kubota
IPC分类号： H01L21/768 , H01L21/3213
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/31144 , H01L21/76829
摘要： A method for fabricating a semiconductor device, including forming a dielectric film above a substrate; forming a metal containing film above the dielectric film; forming at least one carbon containing film of a silicon carbon containing film containing silicon and carbon and a nitrogen carbon containing film containing nitrogen and carbon above the metal containing film; etching the carbon containing film selectively; etching the metal containing film selectively to transfer an opening of the carbon containing film formed by etching; and etching the dielectric film using the carbon containing film and the metal containing film as masks in a state in which a surface of the carbon containing film other than the opening is exposed.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在介电膜上形成含金属膜; 在含金属膜的上方形成含有硅和碳的含硅碳膜和含氮和碳的至少一种含碳膜; 选择性地蚀刻含碳膜; 选择性地蚀刻含金属膜以转移通过蚀刻形成的含碳膜的开口; 并且在露出除了开口以外的含碳膜的表面的状态下，使用含碳膜和含金属膜作为掩模蚀刻电介质膜。

10. 发明申请

US20080113590A1 Polishing method for semiconductor wafer and polishing apparatus for semiconductor wafer 审中-公开
标题翻译：半导体晶片抛光方法及半导体晶片抛光装置
公开(公告)号：US20080113590A1
公开(公告)日：2008-05-15
申请号：US11984057
申请日：2007-11-13
申请人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
发明人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
IPC分类号： B24B7/04 , B24B41/06
CPC分类号： B24B9/065
摘要： A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.
摘要翻译：公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。该方法包括：在半导体晶片沿圆周方向旋转的同时，通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上，从而研磨半导体晶片的抛光对象表面。

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