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1. 发明授权

US08197913B2 Film forming method for a semiconductor 有权
标题翻译：半导体成膜方法
公开(公告)号：US08197913B2
公开(公告)日：2012-06-12
申请号：US12008770
申请日：2008-01-14
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H05H1/24
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要翻译：本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

2. 发明申请

US20100032844A1 INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：层间绝缘膜，接线结构和电子器件及其制造方法
公开(公告)号：US20100032844A1
公开(公告)日：2010-02-11
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/48
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

3. 发明申请

US20100032838A1 AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：非晶碳膜，半导体器件，膜成膜方法，成膜装置和储存介质
公开(公告)号：US20100032838A1
公开(公告)日：2010-02-11
申请号：US12516862
申请日：2007-11-30
申请人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
发明人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
IPC分类号： H01L23/532 , H01L21/314 , C09D1/00
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02123 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要翻译：本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

4. 发明申请

US20070243377A1 Modacrylic Shrinkable Fiber and Method for Manufacturing The Same 有权
标题翻译：改性聚丙烯酸收缩纤维及其制造方法
公开(公告)号：US20070243377A1
公开(公告)日：2007-10-18
申请号：US11632604
申请日：2005-07-08
申请人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
发明人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
IPC分类号： D02G3/00 , D02G3/02
CPC分类号： D01F6/54 , C08F220/14 , C08F220/44 , C08F220/58 , C08F228/02 , D01F6/48 , Y10T428/2913 , Y10T428/2929 , Y10T428/2931 , Y10T442/64
摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要翻译：根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量）为100重量份。这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

5. 发明申请

US20070077737A1 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20070077737A1
公开(公告)日：2007-04-05
申请号：US10580036
申请日：2004-11-19
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H01L21/26 , H01L21/42 , H05H1/24
CPC分类号： C23C16/511 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/3244
摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译：通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而在半导体晶片（W）上形成一定厚度的含氟碳膜。每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟形成在成膜工艺中形成的碳膜。

6. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

7. 发明申请

US20050002590A1 Information processing system, apparatus and method, storage medium storing a program, which implements the method, in form readable by the information processing apparatus, and the program 有权
标题翻译：信息处理系统，装置和方法，存储执行该方法的程序的存储介质，以信息处理装置可读的形式，以及程序
公开(公告)号：US20050002590A1
公开(公告)日：2005-01-06
申请号：US10836217
申请日：2004-05-03
申请人： Kohei Kawamura
发明人： Kohei Kawamura
IPC分类号： G06T11/60 , G06F3/12 , G06T3/00 , G06T3/40 , G06T3/60 , G06T5/50 , H04N1/00 , H04N1/32 , H04N1/387 , H04N1/393 , H04N5/76 , H04N5/91 , H04N7/173 , H04N21/2668 , H04N21/274 , G06K9/00
CPC分类号： H04N1/32 , H04N1/00127 , H04N1/00132
摘要： An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.
摘要翻译：一种用于向通信终端提供服务的信息处理方法。从通信终端接收到要对其应用服务的多个保持数据的块中的编辑时，从保持的数据中自动选择能够接受接受的编辑的数据，并编辑所选择的数据。关于自动判断为不能进行接受编辑的数据，报告将该数据排除在编辑之外的信息被发送到通信终端并被显示。也就是说，当多个保持数据项被同时编辑时，自动排除不适合于该编辑的数据，从而提高用户操作方便性。此外，清楚地向用户指示不适合于编辑的数据的事实，以防止用户的错误识别。

8. 发明授权

US08017197B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08017197B2
公开(公告)日：2011-09-13
申请号：US10580036
申请日：2004-11-19
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H05H1/24 , C23C14/02 , C23C16/00 , C23F1/00
CPC分类号： C23C16/511 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/3244
摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译：通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。由此，将从气体供给部件（3）供给到处理室（1）的C5F8气体变更（激活）为等离子体，以在半导体晶片（W）上形成一定厚度的含氟碳膜）。每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。在预涂工序中，将C5F8气体变成等离子体，形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。

9. 发明授权

US07776736B2 Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same 有权
标题翻译：能够抑制在绝缘膜表面暴露的氟原子与水反应的电子器件用基板，及其加工方法
公开(公告)号：US07776736B2
公开(公告)日：2010-08-17
申请号：US11596186
申请日：2005-05-10
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
IPC分类号： H01L29/40 , H01L21/4763
CPC分类号： H01L21/76801 , C23C16/30 , C23C16/45565 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/312 , H01L21/3127 , H01L21/3146 , H01L21/76825 , H01L21/76826
摘要： Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.
摘要翻译：公开了半导体装置等的电子设备用基板及其加工方法。在该处理方法中，首先准备电子器件用基板，在其上形成由碳氟化合物（CF）构成的绝缘膜（I）基板的表面。然后，通过用例如以氪（Kr）气体制成的活性物质（KR +）轰击绝缘膜（I）的表面，除去暴露在绝缘膜（I）的表面中的氟（F）原子等离子体。在这方面，至少从绝缘膜形成步骤直到完成除氟步骤之后，基板与水分保持脱离接触。

10. 发明授权

US07601402B2 Method for forming insulation film and apparatus for forming insulation film 失效
标题翻译：用于形成绝缘膜的方法和用于形成绝缘膜的装置
公开(公告)号：US07601402B2
公开(公告)日：2009-10-13
申请号：US10703092
申请日：2003-11-07
申请人： Yusaku Kashiwagi , Yoshihisa Kagawa , Kohei Kawamura , Gishi Chung
发明人： Yusaku Kashiwagi , Yoshihisa Kagawa , Kohei Kawamura , Gishi Chung
IPC分类号： H05H1/24
CPC分类号： C23C16/45523 , C23C16/401 , C23C16/56 , F27B17/0025 , H01J37/32082 , H01L21/67161 , H01L21/67207
摘要： A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.
摘要翻译：形成多孔绝缘膜的方法包括绝缘膜形成步骤和孔形成步骤。在绝缘膜形成步骤中，有机硅氧烷基化合物和具有极性基团的有机化合物的等离子体处理形成具有硅氧烷结构的绝缘膜。具有极性基团的有机化合物的分子包含在该硅氧烷结构内。在孔形成步骤期间，激发气体除去具有极性基团的有机化合物的分子，以在绝缘膜中提供孔。根据该方法，可以得到厚度方向均一地形成有规定厚度的绝缘膜和孔。

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