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1. 发明授权

US07926445B2 Oxidizing method and oxidizing unit for object to be processed 有权
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US07926445B2
公开(公告)日：2011-04-19
申请号：US11898366
申请日：2007-09-11
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译：根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

2. 发明申请

US20050272269A1 Oxidizing method and oxidizing unit for object to be processed 有权
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US20050272269A1
公开(公告)日：2005-12-08
申请号：US11086671
申请日：2005-03-23
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： H01L21/31 , C23C8/12 , C23C8/16 , C23C16/00 , H01L21/316 , H01L21/469
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译：根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

3. 发明申请

US20080056967A1 Oxidizing method and oxidizing unit for object to be processed 有权
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US20080056967A1
公开(公告)日：2008-03-06
申请号：US11898366
申请日：2007-09-11
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： B01J8/04 , G05B21/00
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译：根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

4. 发明授权

US07304003B2 Oxidizing method and oxidizing unit for object to be processed 有权
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US07304003B2
公开(公告)日：2007-12-04
申请号：US11086671
申请日：2005-03-23
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
IPC分类号： H01L21/31
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译：根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

5. 发明申请

US20050241578A1 Oxidizing method and oxidizing unit for object to be processed 审中-公开
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US20050241578A1
公开(公告)日：2005-11-03
申请号：US11072416
申请日：2005-02-17
申请人： Kimiya Aoki , Keisuke Suzuki , Toshiyuki Ikeuchi
发明人： Kimiya Aoki , Keisuke Suzuki , Toshiyuki Ikeuchi
IPC分类号： H01L21/283 , B05C11/00 , C23C16/00 , H01L21/00 , H01L21/31 , H01L21/316 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67109
摘要： The invention is an oxidizing method for an object to be processed, the oxidizing method including: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at the processing container, each of the plurality of objects to be processed having an exposed silicon layer and an exposed tungsten layer; an active-species forming step of supplying the oxidative gas and the reducing gas into the processing container, causing the both gases to react on each other under a reduced pressure, and generating active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the silicon layers of the plurality of objects to be processed by means of the active species.
摘要翻译：本发明是一种用于被处理物体的氧化方法，其氧化方法包括：将待处理的多个物体排列在可以被抽真空的处理容器内的排列步骤，具有预定长度的处理容器，在处理容器上设置氧化性气体单元和还原气体供给单元，所述多个被处理体中的每一个具有暴露的硅层和暴露的钨层; 将氧化性气体和还原性气体供给到处理容器中的活性物质形成工序，使两气体在减压下相互反应，并在处理容器中产生活性氧和活性羟基; 以及通过活性物质氧化待处理的多个待处理物体的硅层的表面的氧化步骤。

6. 发明授权

US06869892B1 Method of oxidizing work pieces and oxidation system 有权
标题翻译：氧化工件和氧化系统的方法
公开(公告)号：US06869892B1
公开(公告)日：2005-03-22
申请号：US10767470
申请日：2004-01-30
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
IPC分类号： C23C8/10 , H01L21/316 , H01L21/31
CPC分类号： H01L21/02238 , C23C8/10 , H01L21/02255 , H01L21/31662
摘要： A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.
摘要翻译：根据本发明的氧化工件的方法包括以下步骤：在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W，在工作气氛中氧化工件的表面包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。氧化性气体和还原气体分别沿长度方向供给到处理容器内。部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。通过每个喷嘴的气体流速根据由处理容器中的产品晶片，虚拟晶片和监视晶片组成的工件的任何组合来设定。

7. 发明授权

US08461059B2 Batch CVD method and apparatus for semiconductor process 有权
标题翻译：分批CVD法和半导体工艺装置
公开(公告)号：US08461059B2
公开(公告)日：2013-06-11
申请号：US12838911
申请日：2010-07-19
申请人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
发明人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
IPC分类号： H01L21/473
CPC分类号： C23C16/402 , C23C16/45525 , C23C16/45557 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
摘要翻译：分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，从而进行反应步骤，排气阀从预定的打开状态逐渐减小阀开度。

8. 发明申请

US20110021033A1 BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 有权
标题翻译： BATCH CVD方法和半导体工艺的设备
公开(公告)号：US20110021033A1
公开(公告)日：2011-01-27
申请号：US12838911
申请日：2010-07-19
申请人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
发明人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
IPC分类号： H01L21/46
CPC分类号： C23C16/402 , C23C16/45525 , C23C16/45557 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
摘要翻译：分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，进行反应步骤，排气阀从预定的打开状态逐渐减小阀开度。

9. 发明授权

US07674724B2 Oxidizing method and oxidizing unit for object to be processed 有权
标题翻译：用于处理物体的氧化方法和氧化装置
公开(公告)号：US07674724B2
公开(公告)日：2010-03-09
申请号：US12213784
申请日：2008-06-24
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/469
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译：根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元，将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

10. 发明授权

US07625604B2 Heat treatment method and heat treatment apparatus 有权
标题翻译：热处理方法和热处理装置
公开(公告)号：US07625604B2
公开(公告)日：2009-12-01
申请号：US10523803
申请日：2003-08-08
申请人： Keisuke Suzuki , Wenling Wang , Tsukasa Yonekawa , Toshiyuki Ikeuchi , Toru Sato
发明人： Keisuke Suzuki , Wenling Wang , Tsukasa Yonekawa , Toshiyuki Ikeuchi , Toru Sato
IPC分类号： C23C16/00
CPC分类号： H01L21/67253 , C23C16/46 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31662 , H01L21/67109 , H01L21/67248 , H01L22/20 , Y10T436/25
摘要： The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.
摘要翻译：热处理方法技术领域本发明涉及一种热处理方法，其包括使用多个第一基板进行热处理步骤的第一热处理步骤，其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜比生产基板的表面。然后，第二热处理步骤通过使用多个第二基板进行热处理步骤，其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜，而不是在多个第二基板的表面上形成薄膜第一基板，并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。然后，第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤，其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。

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