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1. 发明授权

US08563096B2 Vertical film formation apparatus and method for using same 有权
标题翻译：垂直成膜装置及其使用方法
公开(公告)号：US08563096B2
公开(公告)日：2013-10-22
申请号：US12954767
申请日：2010-11-26
申请人： Masanobu Matsunaga , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/02 , H05H1/24
CPC分类号： C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546
摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.
摘要翻译：使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

2. 发明申请

US20110281443A1 FILM FORMATION METHOD AND FILM FORMATION APPARATUS 审中-公开
标题翻译：电影形成方法和电影制作装置
公开(公告)号：US20110281443A1
公开(公告)日：2011-11-17
申请号：US13106140
申请日：2011-05-12
申请人： Pao-Hwa CHOU , Kota UMEZAWA , Yosuke WATANABE , Masayuki HASEGAWA
发明人： Pao-Hwa CHOU , Kota UMEZAWA , Yosuke WATANABE , Masayuki HASEGAWA
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： C23C16/402
摘要： The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.
摘要翻译：成膜方法包括将待处理物体转移到处理室中; 将待处理物体的温度控制在350℃以下; 将作为Si源气体和氧化气体的氨基硅烷气体供给到处理室中，其中，所述氧化气体由包含选自O 2气体和O 3气体中的至少一种的第一氧化气体构成，包含选自H 2 O气体和H 2 O 2气体中的至少一种的氧化气体，从而在待处理物体的表面上形成氧化硅膜。

3. 发明申请

US20110129619A1 FILM FORMATION METHOD AND APPARATUS 有权
标题翻译：胶片形成方法和装置
公开(公告)号：US20110129619A1
公开(公告)日：2011-06-02
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/34 , H05H1/24 , C23C16/52
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译：成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和第二供给步骤多次以在目标物体上形成氮化硅膜。第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。

4. 发明申请

US20110129618A1 VERTICAL FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
标题翻译：垂直膜形成装置及其使用方法
公开(公告)号：US20110129618A1
公开(公告)日：2011-06-02
申请号：US12954767
申请日：2010-11-26
申请人： Masanobu MATSUNAGA , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu MATSUNAGA , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： H05H1/24 , C23C16/02
CPC分类号： C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546
摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.
摘要翻译：使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

5. 发明授权

US07559992B2 Semiconductor processing apparatus and method 有权
标题翻译：半导体处理装置及方法
公开(公告)号：US07559992B2
公开(公告)日：2009-07-14
申请号：US11305201
申请日：2005-12-19
申请人： Daisuke Suzuki , Masayuki Hasegawa , Atsushi Endo
发明人： Daisuke Suzuki , Masayuki Hasegawa , Atsushi Endo
IPC分类号： C23C16/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/67017
摘要： A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.
摘要翻译：半导体处理装置包括容纳目标基板的处理室，向处理室供给处理气体的气体供给系统，排出处理室的排气单元和将处理室连接到排气单元的排气管路。在排气管上设置有可开启的可变阀，在该可开启的可变阀的上游侧与排气管连接有惰性气体导入惰性气体。压力控制机构被配置为通过在使排气单元排气的同时调节处理室中的过程期间开启可变阀的开启比率和惰性气体的流量中的至少一个来控制处理室中的压力处理室并将惰性气体从惰性气体管线引入排气管线。

6. 发明申请

US20060134811A1 Semiconductor processing apparatus and method 有权
公开(公告)号：US20060134811A1
公开(公告)日：2006-06-22
申请号：US11305201
申请日：2005-12-19
申请人： Daisuke Suzuki , Masayuki Hasegawa , Atsushi Endo
发明人： Daisuke Suzuki , Masayuki Hasegawa , Atsushi Endo
IPC分类号： H01L21/00
CPC分类号： H01L21/67017
摘要： A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.

7. 发明授权

US4533404A Soldering fluxes 失效
标题翻译：焊接焊剂
公开(公告)号：US4533404A
公开(公告)日：1985-08-06
申请号：US614737
申请日：1984-05-25
申请人： Masayuki Hasegawa
发明人： Masayuki Hasegawa
IPC分类号： C23G1/24 , B23K35/36 , B23K35/363 , B23K35/362
CPC分类号： B23K35/3616 , B23K35/3612
摘要： The soldering flux of this invention containing a chemical reaction product precipitated when at least one member selected from normally liquid brominated aliphatic hydrocarbons is mixed with at least one member selected from the group consisting of normally liquid amino group-containing aromatic hydrocarbons and normally liquid amino group-containing aliphatic hydrocarbons can not only solder stainless steel or nickel-chromium alloys whose soldering has heretofore been thought impossible, but also does not corrode the soldered metallic material after soldering, has a higher electric insulation resistivity necessary for the soldered areas of parts of electronic and electric devices and appliances, markedly reduces defects due to poor soldering, and can secure a high reliability of soldered joints as compared with conventional fluxes.
摘要翻译：当将至少一种选自正常液体溴化脂族烃的成分与选自通常含有液体氨基的芳族烃和通常为液体氨基的至少一种混合时，含有化学反应产物的本发明的助焊剂混合含有的脂族烃不仅可以焊接迄今为止认为不可能进行焊接的不锈钢或镍铬合金，而且在焊接后也不会腐蚀焊接的金属材料，电子部件的焊接区域具有较高的电绝缘电阻和电气设备和电器，显着地减少了焊接不良导致的缺陷，并且与常规焊剂相比可以确保焊接接头的高可靠性。

8. 发明授权

US08461059B2 Batch CVD method and apparatus for semiconductor process 有权
标题翻译：分批CVD法和半导体工艺装置
公开(公告)号：US08461059B2
公开(公告)日：2013-06-11
申请号：US12838911
申请日：2010-07-19
申请人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
发明人： Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
IPC分类号： H01L21/473
CPC分类号： C23C16/402 , C23C16/45525 , C23C16/45557 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
摘要翻译：分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，从而进行反应步骤，排气阀从预定的打开状态逐渐减小阀开度。

9. 发明授权

US08383848B2 Transition metal compound and catalyst for olefin polymerization 失效
标题翻译：过渡金属化合物和烯烃聚合催化剂
公开(公告)号：US08383848B2
公开(公告)日：2013-02-26
申请号：US13171581
申请日：2011-06-29
申请人： Hidenori Hanaoka , Masato Takano , Naoko Ochi , Kazuo Takaoki , Kazuyuki Ito , Masayuki Hasegawa
发明人： Hidenori Hanaoka , Masato Takano , Naoko Ochi , Kazuo Takaoki , Kazuyuki Ito , Masayuki Hasegawa
IPC分类号： C07F17/00 , C08F4/6192 , C08F4/6592 , B01J31/22
CPC分类号： C07F17/00 , C07C13/553 , C07C2602/08 , C07C2603/14 , C08F4/65912 , C08F4/65916 , C08F10/00 , C08F110/06 , C08F210/16 , C08F4/65927 , C08F2500/03 , C08F2500/15 , C08F210/08 , C08F2500/09
摘要： A transition metal compound represented by the formula (1-1) or the formula (1-2) (M is a transition metal atom) and a process for producing a catalyst for olefin polymerization comprising a step of bringing the transition metal compound into contact with a co-catalytic component for activation.
摘要翻译：由式（1-1）或式（1-2）表示的过渡金属化合物（M是过渡金属原子）和用于制备烯烃聚合催化剂的方法包括使过渡金属化合物接触的步骤具有用于活化的助催化组分。

10. 发明申请

US20120156888A1 SLIMMING METHOD OF CARBON-CONTAINING THIN FILM AND OXIDATION APPARATUS 有权
标题翻译：含碳薄膜和氧化装置的滑动方法
公开(公告)号：US20120156888A1
公开(公告)日：2012-06-21
申请号：US13330004
申请日：2011-12-19
申请人： Jun SATO , Masayuki HASEGAWA
发明人： Jun SATO , Masayuki HASEGAWA
IPC分类号： H01L21/306
CPC分类号： H01L21/0337 , C23C8/36 , H01L21/0273 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/67109 , H01L21/67253
摘要： A slimming method includes transferring an object to be processed on which a patterned carbon-containing thin film is formed into a process chamber in an oxidation apparatus; and oxidizing and removing the surface of the carbon-containing thin film by an oxidizing gas while supplying moisture into the process chamber, to reduce widths of the protruded portions on the pattern of the carbon-containing thin film.
摘要翻译：减肥方法包括将其上形成有图案的含碳薄膜的待处理物体转移到氧化装置中的处理室中; 并且在向处理室供给水分的同时通过氧化气体氧化除去含碳薄膜的表面，以减小含碳薄膜图案上的突出部分的宽度。

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