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1. 发明授权

US06869892B1 Method of oxidizing work pieces and oxidation system 有权
标题翻译：氧化工件和氧化系统的方法
公开(公告)号：US06869892B1
公开(公告)日：2005-03-22
申请号：US10767470
申请日：2004-01-30
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki , David Paul Brunco , Steven Robert Soss , Anthony Dip
IPC分类号： C23C8/10 , H01L21/316 , H01L21/31
CPC分类号： H01L21/02238 , C23C8/10 , H01L21/02255 , H01L21/31662
摘要： A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.
摘要翻译：根据本发明的氧化工件的方法包括以下步骤：在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W，在工作气氛中氧化工件的表面包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。氧化性气体和还原气体分别沿长度方向供给到处理容器内。部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。通过每个喷嘴的气体流速根据由处理容器中的产品晶片，虚拟晶片和监视晶片组成的工件的任何组合来设定。

2. 发明申请

US20080169534A1 REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES 有权
标题翻译：在微特征中减少缺陷硅或硅锗沉积
公开(公告)号：US20080169534A1
公开(公告)日：2008-07-17
申请号：US11622204
申请日：2007-01-11
申请人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
发明人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
IPC分类号： H01L21/36 , H01L29/06
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/0262 , H01L21/02639
摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.
摘要翻译：提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。根据一个实施例，Si或SiGe种子层通过将沉积的Si或SiGe层沉积在图案化的衬底上，从场区去除Si或SiGe层而形成，在H区存在下热处理Si或SiGe层，从而将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

3. 发明申请

US20070259534A1 IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 有权
标题翻译：氧化氮化铝膜的现场形成
公开(公告)号：US20070259534A1
公开(公告)日：2007-11-08
申请号：US11745278
申请日：2007-05-07
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/303 , C23C16/56
摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.
摘要翻译：提供了一种在衬底上原位形成薄的氧化AlN膜的方法。该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

4. 发明授权

US07235440B2 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation 有权
标题翻译：通过自限界面氧化形成超薄氧化层
公开(公告)号：US07235440B2
公开(公告)日：2007-06-26
申请号：US10630969
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/8242
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要翻译：使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度在基材上变化小于约1A。

5. 发明申请

US20070042570A1 Sequential deposition process for forming Si-containing films 失效
标题翻译：用于形成含Si膜的顺序沉积工艺
公开(公告)号：US20070042570A1
公开(公告)日：2007-02-22
申请号：US11206199
申请日：2005-08-18
申请人： Anthony Dip , Allen Leith , Seungho Oh
发明人： Anthony Dip , Allen Leith , Seungho Oh
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/28 , C23C16/4408 , C23C16/45523 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/3185
摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.
摘要翻译：提供了用于在顺序沉积工艺中形成Si膜的方法。该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

6. 发明申请

US20050221001A1 Method for extending time between chamber cleaning processes 有权
标题翻译：在室清洁过程之间延长时间的方法
公开(公告)号：US20050221001A1
公开(公告)日：2005-10-06
申请号：US10814713
申请日：2004-03-31
申请人： Raymond Joe , John Gumpher , Anthony Dip
发明人： Raymond Joe , John Gumpher , Anthony Dip
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , C23C16/00 , B32B9/00
CPC分类号： C23C16/4404 , H01L21/3185
摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.
摘要翻译：一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺，从处理室移除至少一个基板。颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

7. 发明申请

US20050048742A1 Multiple grow-etch cyclic surface treatment for substrate preparation 审中-公开
标题翻译：用于底物制备的多次生长蚀刻循环表面处理
公开(公告)号：US20050048742A1
公开(公告)日：2005-03-03
申请号：US10647534
申请日：2003-08-26
申请人： Anthony Dip , Pradip Roy , Raymond Joe
发明人： Anthony Dip , Pradip Roy , Raymond Joe
IPC分类号： H01L21/28 , H01L21/306 , H01L21/302 , H01L21/322 , H01L21/461
CPC分类号： H01L21/28238 , H01L21/02049 , H01L21/02052 , H01L21/28255
摘要： This invention provides a method for modifying the surface properties of a Si or Si alloy substrate by performing repeated etch-grow cycles of thermal oxide to yield a more defect free substrate with a more uniform nucleating surface which provides an improved interface for dielectric formation. Additionally, this method of processing does not expose the substrate to ambient atmosphere and preserves the improved surface until subsequent processing steps are performed.
摘要翻译：本发明提供了一种通过进行热氧化物的重复蚀刻生长循环来改善Si或Si合金衬底的表面性质的方法，以产生具有更均匀的成核表面的更无缺陷的衬底，其提供用于电介质形成的改进的界面。此外，这种处理方法不会使衬底暴露于环境大气中并保留改进的表面，直到执行后续的处理步骤。

8. 发明授权

US08465591B2 Film deposition apparatus 有权
公开(公告)号：US08465591B2
公开(公告)日：2013-06-18
申请号：US12491313
申请日：2009-06-25
申请人： Hitoshi Kato , Manabu Honma , Anthony Dip
发明人： Hitoshi Kato , Manabu Honma , Anthony Dip
IPC分类号： C23C16/00
CPC分类号： C23C16/402 , C23C16/45521 , C23C16/45551
摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

9. 发明授权

US08263474B2 Reduced defect silicon or silicon germanium deposition in micro-features 有权
标题翻译：在微特征中减少缺陷硅或硅锗沉积
公开(公告)号：US08263474B2
公开(公告)日：2012-09-11
申请号：US11622204
申请日：2007-01-11
申请人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
发明人： Anthony Dip , John Gumpher , Allen John Leith , Seungho Oh
IPC分类号： H01L21/76
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/0262 , H01L21/02639
摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.
摘要翻译：提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。根据一个实施例，Si或SiGe种子层通过将沉积Si或SiGe层保护到图案化衬底上而形成，从场区去除Si或SiGe层，在H 2气体存在下热处理Si或SiGe层以将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

10. 发明申请

US20110241085A1 DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE 有权
标题翻译：用于保护图案结构的双面隔板
公开(公告)号：US20110241085A1
公开(公告)日：2011-10-06
申请号：US12751891
申请日：2010-03-31
申请人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
发明人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
IPC分类号： H01L29/78 , H01L21/311
CPC分类号： H01L29/4983 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.
摘要翻译：提供了具有双侧壁间隔件和成形方法的半导体器件。该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层，所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

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