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    • 1. 发明授权
    • Heat treatment method and heat treatment apparatus
    • 热处理方法和热处理装置
    • US07625604B2
    • 2009-12-01
    • US10523803
    • 2003-08-08
    • Keisuke SuzukiWenling WangTsukasa YonekawaToshiyuki IkeuchiToru Sato
    • Keisuke SuzukiWenling WangTsukasa YonekawaToshiyuki IkeuchiToru Sato
    • C23C16/00
    • H01L21/67253C23C16/46C23C16/52H01L21/0217H01L21/02211H01L21/02238H01L21/02255H01L21/02271H01L21/31662H01L21/67109H01L21/67248H01L22/20Y10T436/25
    • The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.
    • 热处理方法技术领域本发明涉及一种热处理方法,其包括使用多个第一基板进行热处理步骤的第一热处理步骤,其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜 比生产基板的表面。 然后,第二热处理步骤通过使用多个第二基板进行热处理步骤,其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜,而不是在多个第二基板的表面上形成薄膜 第一基板,并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。 然后,第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤,其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。
    • 2. 发明申请
    • Heat treatment method and heat treament apparatus
    • US20050201894A1
    • 2005-09-15
    • US10523803
    • 2003-08-08
    • Keisuke SuzukiWenling WangTsukasa YonekawaToshiyuki IkeuchiToru Sato
    • Keisuke SuzukiWenling WangTsukasa YonekawaToshiyuki IkeuchiToru Sato
    • H01L21/31C23C16/46C23C16/52H01L21/00H01L21/316H01L21/66B01L3/00G01N1/00
    • H01L21/67253C23C16/46C23C16/52H01L21/0217H01L21/02211H01L21/02238H01L21/02255H01L21/02271H01L21/31662H01L21/67109H01L21/67248H01L22/20Y10T436/25
    • The present invention relates to a thermal processing method including thermal processing steps having: a step of holding a plurality of substrates by means of a substrate holder, a step of conveying the substrate holder into a reaction container, a step of heating a plurality of zones of thermal process atmosphere in the reaction container by means of a plurality of heating units, respectively, and a step of forming thin films on surfaces of the plurality of substrates by introducing a process gas into the reaction container. The thermal processing method includes: a first thermal processing step of carrying out the thermal processing steps by using a plurality of first substrates as the plurality of substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates; a first measuring step of measuring a thickness of the thin films formed on the surfaces of the plurality of first substrates for each of the plurality of zones of the thermal process atmosphere in the reaction container; and a first setting step of setting respective temperature set values of the plurality of heating units in such a manner that the thickness measured for each of the plurality of zones substantially coincides with a target thickness of thin films to be formed on the surfaces of production substrates, based on measurement result of the first measuring step. Then, a second thermal processing step of carrying out the thermal processing steps by using a plurality of second substrates as the plurality of substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein the plurality of heating units are respectively adjusted to the respective temperature set values set by the first setting step; a second measuring step of measuring a thickness of the thin films formed on the surfaces of the plurality of second substrates for each of the plurality of zones of the thermal process atmosphere in the reaction container; and a second correcting step of correcting the respective temperature set values of the plurality of heating units in such a manner that the thickness measured for each of the plurality of zones substantially coincides with the target thickness of thin films to be formed on the surfaces of production substrates, based on measurement result of the second measuring step; are carried out. Then, a third thermal processing step of carrying out the thermal processing steps by using at least a plurality of production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected by the second correcting step, is carried out.
    • 4. 发明申请
    • Method of oxidizing member to be treated
    • 氧化待处理物质的方法
    • US20060094248A1
    • 2006-05-04
    • US10519451
    • 2003-07-07
    • Tatsuo NishitaTsukasa YonekawaKeisuke SuzukiToru Sato
    • Tatsuo NishitaTsukasa YonekawaKeisuke SuzukiToru Sato
    • H01L21/31
    • H01L21/02238H01L21/02233H01L21/02255H01L21/31658
    • A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.
    • 提供了一种用于氧化被处理物体的方法,其中氧化物膜可以提供良好的膜质量,并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。 在可以容纳多个待处理物体的单个处理容器8中对待处理物体的表面进行氧化的方法中,至少在所述表面露出氮化物膜,主要使用 活性羟基/氧物质,将处理压力设定在133Pa以下,将处理温度设定为400℃以上。 在这些条件下,通过在多个待处理物体的表面上氧化氮化物膜,维持高的晶面间均匀性,获得具有良好的膜质量的氧化物膜。
    • 6. 发明授权
    • Signal processing apparatus
    • 信号处理装置
    • US09448100B2
    • 2016-09-20
    • US13981233
    • 2012-02-01
    • Kenichi NagaeHirofumi TakiToru Sato
    • Kenichi NagaeHirofumi TakiToru Sato
    • G01F17/00G01H1/00A61B8/14A61B8/00A61B8/08G01S7/52G01S15/89
    • G01H1/00A61B8/14A61B8/4488A61B8/483A61B8/5207G01S7/52036G01S7/52073G01S15/8977
    • Provided is a signal processing apparatus including: a transducer that performs scanning through the interior of an object and acquires received waveform data of a plurality of scanlines; an intensity screening unit that outputs a high intensity position at which signal intensity calculated from the received waveform data is higher than a first predetermined value; a correlation calculation unit that calculates a correlation value in a constant-width division for received waveform data of a first scanline and of a second scanline having a predetermined correlation with the first scanline; a position extraction unit that extracts, as a candidate position of a singular region, a position which corresponds to a high intensity position and for which the correlation value is lower than a second predetermined value; and an image processor that performs signal processing of generating image data of the object on the basis of the received waveform data.
    • 提供一种信号处理装置,包括:换能器,其通过物体内部进行扫描并获取多条扫描线的接收波形数据; 强度筛选单元,其输出从接收波形数据计算出的信号强度高于第一预定值的高强度位置; 相关计算单元,计算与第一扫描线具有预定相关性的第一扫描线和第二扫描线的接收波形数据的恒定宽度除法的相关值; 位置提取单元,其提取与高强度位置对应的位置,并且所述相关值低于第二预定值的单个区域的候选位置; 以及图像处理器,其基于接收到的波形数据执行产生对象的图像数据的信号处理。
    • 7. 发明申请
    • SIGNAL PROCESSING APPARATUS
    • 信号处理装置
    • US20130338944A1
    • 2013-12-19
    • US13981233
    • 2012-02-01
    • Kenichi NagaeHirofumi TakiToru Sato
    • Kenichi NagaeHirofumi TakiToru Sato
    • G01H1/00
    • G01H1/00A61B8/14A61B8/4488A61B8/483A61B8/5207G01S7/52036G01S7/52073G01S15/8977
    • Provided is a signal processing apparatus including: an transducer that performs scanning over the interior of an object and acquires received waveform data of a plurality of scanlines; an intensity screening unit that outputs a high intensity position at which signal intensity calculated from the received waveform data is higher than a first predetermined value; a correlation calculation unit that calculates a correlation value in a constant-width division for received waveform data of a first scanline and of a second scanline having a predetermined correlation with the first scanline; a position extraction unit that extracts, as a candidate position of a singular region, a position which corresponds to a high intensity position and for which the correlation value is lower than a second predetermined value; and an image processor that performs signal processing of generating image data of the object on the basis of the received waveform data.
    • 提供一种信号处理装置,包括:换能器,其对物体内部执行扫描并获取多条扫描线的接收波形数据; 强度筛选单元,其输出从接收波形数据计算出的信号强度高于第一预定值的高强度位置; 相关计算单元,计算与第一扫描线具有预定相关性的第一扫描线和第二扫描线的接收波形数据的恒定宽度除法的相关值; 位置提取单元,其提取与高强度位置对应的位置,并且所述相关值低于第二预定值的单个区域的候选位置; 以及图像处理器,其基于接收到的波形数据执行产生对象的图像数据的信号处理。