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1. 发明授权

US4766536A Computer bus apparatus with distributed arbitration 失效
标题翻译：具有分布式仲裁的计算机总线设备
公开(公告)号：US4766536A
公开(公告)日：1988-08-23
申请号：US15114
申请日：1987-02-17
申请人： James A. Wilson, Jr. , David H. Bernstein
发明人： James A. Wilson, Jr. , David H. Bernstein
IPC分类号： G06F13/374 , G06F13/26
CPC分类号： G06F13/374 , B60W2510/0241
摘要： A bus apparatus for interconnecting a plurality of nodes is disclosed. The nodes may comprise processors, input/output subsystems, or the like. Each node maintains a unique priority number; the priority numbers are determined independently by each node. Separate updating of the priority numbers occurs for acknowledgement packets as compared to data transmissions. This provides for quick, efficient acknowledgement of transmissions and does not unfairly penalize a popular receiving node. Two different interface circuits are described, one particularly suitable for use with an input/output subsystem, and the other for a processor.
摘要翻译：公开了一种用于互连多个节点的总线装置。节点可以包括处理器，输入/输出子系统等。每个节点维护唯一的优先级数; 优先级数由每个节点独立确定。与数据传输相比，确认分组发生优先级编号的单独更新。这提供了对传输的快速，有效的确认，并且不会不公平地惩罚流行的接收节点。描述了两个不同的接口电路，一个特别适用于输入/输出子系统，另一个用于处理器。

2. 发明授权

US07944124B1 MEMS structure having a stress-inducer temperature-compensated resonator member 有权
标题翻译：具有应力 - 感应器温度补偿谐振器构件的MEMS结构
公开(公告)号：US07944124B1
公开(公告)日：2011-05-17
申请号：US12201819
申请日：2008-08-29
申请人： David H. Bernstein
发明人： David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： H03H9/2473 , H03H3/0076 , H03H9/02338 , H03H2009/02496
摘要： A MEMS structure having a stress-inducer temperature-compensated resonator member is described. The MEMS structure includes a frame disposed above a substrate. The frame has an inner surface and an outer surface and is composed of a first material having a first coefficient of thermal expansion (CTE) and a second material having a second CTE, different from the first CTE. A resonator member is coupled to the inner surface of the frame.
摘要翻译：描述了具有应力 - 感应器温度补偿谐振器件的MEMS结构。 MEMS结构包括设置在基板上方的框架。框架具有内表面和外表面，并且由具有第一热膨胀系数（CTE）的第一材料和具有不同于第一CTE的第二CTE的第二材料构成。谐振器构件联接到框架的内表面。

3. 发明授权

US07639104B1 Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权
标题翻译：具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US07639104B1
公开(公告)日：2009-12-29
申请号：US11716115
申请日：2007-03-09
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03H9/00
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material. In a specific embodiment, the shape, dimensions, location and arrangement of a second material comprising silicon dioxide is tailored so that the resonator comprising a first material of SiGe will have a TCF of a much lower magnitude than that of either a homogeneous SiGe or homogeneous silicon dioxide resonator.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。在具体实施例中，包括二氧化硅的第二材料的形状，尺寸，位置和布置被定制，使得包括SiGe的第一材料的谐振器将具有比均匀SiGe或均质SiGe的TCF低得多的TCF 二氧化硅谐振器。

4. 发明授权

US4661903A Digital data processing system incorporating apparatus for resolving names 失效
标题翻译：数字数据处理系统，包括解析名称的装置
公开(公告)号：US4661903A
公开(公告)日：1987-04-28
申请号：US647271
申请日：1984-09-04
申请人： Walter A. Wallach, Jr. , Michael S. Richmond , John K. Ahlstrom , David H. Bernstein , Richard G. Bratt
发明人： Walter A. Wallach, Jr. , Michael S. Richmond , John K. Ahlstrom , David H. Bernstein , Richard G. Bratt
IPC分类号： G06F9/318 , G06F9/35 , G06F9/44 , G06F13/00
CPC分类号： G06F9/30192 , G06F9/35 , G06F9/4428
摘要： Apparatus in a digital computer system for obtaining descriptors of data from names representing the data. The digital computer system executes sequences of instructions. Names representing data processed during execution of an instruction sequence are associated with the instruction sequence. Each name associated with the instruction sequence corresponds to a name table entry associated with the instruction sequence. The operation of resolving a name, i.e., obtaining the descriptor for the data represented by the name, is performed by name processing apparatus in processors of the data processing system. In response to a name, the name processing apparatus locates the name table entry corresponding to the name obtains the descriptor for the item represented by the name using the information in the name table entry corresponding to the name. In a present embodiment, the descriptor specifies the address and length of a data item. The information in the name table entry specifies the address of the represented item by specifying a base address and a displacement and further specifies the length and type of the represented item.
摘要翻译：数字计算机系统中的装置，用于从表示数据的名称获得数据的描述符。数字计算机系统执行指令序列。表示在执行指令序列期间处理的数据的名称与指令序列相关联。与指令序列相关联的每个名称对应于与指令序列相关联的名称表条目。通过名称处理装置在数据处理系统的处理器中执行解析名称的操作，即获得由名称表示的数据的描述符。响应于名称，名称处理设备找到与名称相对应的名称表项，使用与名称相对应的名称表项中的信息来获得由名称表示的项目的描述符。在本实施例中，描述符指定数据项的地址和长度。名称表项目中的信息通过指定基址和位移来指定所表示项目的地址，并进一步指定所表示项目的长度和类型。

5. 发明授权

US4455604A Digital data processing system having addressing means for translating operands into descriptors identifying data, plural multilevel microcode control means, and ability to execute a plurality of internal language dialects 失效
标题翻译：数字数据处理系统具有用于将操作数转换为识别数据的描述符的寻址装置，多个多级微代码控制装置以及执行多个内部语言方言的能力
公开(公告)号：US4455604A
公开(公告)日：1984-06-19
申请号：US266422
申请日：1981-05-22
申请人： John K. Ahlstrom , Brett Bachman , Richard A. Belgard , David H. Bernstein , Richard G. Bratt , Ronald H. Gruner , Thomas M. Jones , Lawrence H. Katz , Craig J. Mundie , Michael S. Richmond , Stephen I. Schleimer , Steven J. Wallach , Walter A. Wallach, Jr , Douglas M. Well
发明人： John K. Ahlstrom , Brett Bachman , Richard A. Belgard , David H. Bernstein , Richard G. Bratt , Ronald H. Gruner , Thomas M. Jones , Lawrence H. Katz , Craig J. Mundie , Michael S. Richmond , Stephen I. Schleimer , Steven J. Wallach , Walter A. Wallach, Jr , Douglas M. Well
IPC分类号： G06F9/44 , G06F7/00 , G06F9/10
CPC分类号： G06F9/4428
摘要： The processor of the present invention executes procedures, which comprise S-language instructions and names. S-languages are of higher order than typical machine languages and can be tailored to user high-order languages. Each procedure includes a dialect code which the processor interprets, enabling it to execute any of a plurality of dialects of S-languages. The processor includes means for resolving names into operand logical addresses. The processor possosses multiple levels of microcode control means, each with its own set of stacks.
摘要翻译：本发明的处理器执行包括S语言指令和名称的过程。 S语言比典型的机器语言高，可以根据用户高阶语言进行定制。每个过程包括处理器解释的方言代码，使其能够执行S语言的多个方言中的任何一种。处理器包括用于将名称解析为操作数逻辑地址的装置。处理器可以处理多个级别的微码控制装置，每一个都有自己的一组堆栈。

6. 发明授权

US4394736A Data processing system utilizing a unique two-level microcoding technique for forming microinstructions 失效
标题翻译：数据处理系统利用独特的二级微编码技术形成微指令
公开(公告)号：US4394736A
公开(公告)日：1983-07-19
申请号：US120272
申请日：1980-02-11
申请人： David H. Bernstein , Richard A. Carberry , Michael B. Druke , Ronald I. Gusowski
发明人： David H. Bernstein , Richard A. Carberry , Michael B. Druke , Ronald I. Gusowski
IPC分类号： G06F20060101 , G06F9/22 , G06F9/26 , G06F13/14 , G06F13/36 , G06F13/42 , H03K23/66
CPC分类号： H03K23/667 , G06F13/36 , G06F13/42 , G06F9/26
摘要： A data processing system using microcode architecture in which a two-level microcode system comprises one or more first, or "horizontal", microinstructions and a plurality of second or "vertical", microinstruction portions in a vertical microcontrol store. In a preferred embodiment the vertical microinstruction portions include one or more "modifier" fields, a selection field for selecting a horizontal microinstruction and a sequencing field for selecting the next vertical microinstruction portion of a sequence thereof, one or more fields of the horizontal microinstructions being capable of modification by the vertical modifier fields in order to form output microinstructions for performing data processing operations.
摘要翻译：一种使用微代码架构的数据处理系统，其中两级微代码系统包括垂直微控制器存储器中的一个或多个第一或“水平”微指令以及多个第二或“垂直”微指令部分。在优选实施例中，垂直微指令部分包括一个或多个“修改器”字段，用于选择水平微指令的选择字段和用于选择其序列的下一垂直微指令部分的测序字段，水平微指令的一个或多个字段为能够通过垂直修改器字段进行修改，以便形成用于执行数据处理操作的输出微指令。

7. 发明授权

US08669831B2 Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权
标题翻译：具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US08669831B2
公开(公告)日：2014-03-11
申请号：US12950519
申请日：2010-11-19
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03H9/00 , H03H9/24 , H03H9/21 , H03H3/013
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

8. 发明授权

US08258893B2 Out-of-plane MEMS resonator with static out-of-plane deflection 有权
标题翻译：具有静态超平面偏转的平面外的MEMS谐振器
公开(公告)号：US08258893B2
公开(公告)日：2012-09-04
申请号：US13173432
申请日：2011-06-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H03H9/24 , H03H9/125 , H03H9/46
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
摘要翻译：微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。

9. 发明授权

US07956517B1 MEMS structure having a stress inverter temperature-compensated resonator member 有权
标题翻译：具有应力逆变器温度补偿谐振器构件的MEMS结构
公开(公告)号：US07956517B1
公开(公告)日：2011-06-07
申请号：US12204713
申请日：2008-09-04
申请人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： H03H3/0076 , B81B3/0072 , B81B2201/0271 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
摘要翻译：描述了具有温度补偿谐振器元件的MEMS结构。 MEMS结构包括与衬底耦合的不对称应力逆变器部件。谐振器构件容纳在不对称应力逆变器构件中并悬置在衬底上。不对称应力逆变器构件用于通过响应于温度变化在谐振器构件上引起应力来改变谐振器构件的频率的热系数。

10. 发明申请

US20100093125A1 METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL 有权
标题翻译：具有隔离材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US20100093125A1
公开(公告)日：2010-04-15
申请号：US12638919
申请日：2009-12-15
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L21/30
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

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