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1. 发明授权

US08427251B2 Temperature compensated oscillator including MEMS resonator for frequency control 有权
标题翻译：温度补偿振荡器包括用于频率控制的MEMS谐振器
公开(公告)号：US08427251B2
公开(公告)日：2013-04-23
申请号：US11691330
申请日：2007-03-26
申请人： Emmanuel P. Quevy , Roger T. Howe
发明人： Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H03B5/30
CPC分类号： G01K7/32 , G04G3/04 , H03H9/02448 , H03H9/2473 , H03H2009/02496
摘要： Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.
摘要翻译：公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。

2. 发明申请

US20120229220A1 Temperature compensated oscillator including MEMS resonator for frequency control 有权
标题翻译：温度补偿振荡器包括用于频率控制的MEMS谐振器
公开(公告)号：US20120229220A1
公开(公告)日：2012-09-13
申请号：US11691330
申请日：2007-03-26
申请人： Emmanuel P. Quevy , Roger T. Howe
发明人： Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H03B21/01 , G01K11/26
CPC分类号： G01K7/32 , G04G3/04 , H03H9/02448 , H03H9/2473 , H03H2009/02496
摘要： Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.
摘要翻译：公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。

3. 发明申请

US20120171798A1 DAMASCENE PROCESS FOR USE IN FABRICATING SEMICONDUCTOR STRUCTURES HAVING MICRO/NANO GAPS 有权
标题翻译：用于制造具有微米/纳米GAPS的半导体结构的大分子方法
公开(公告)号：US20120171798A1
公开(公告)日：2012-07-05
申请号：US11737545
申请日：2007-04-19
申请人： Hideki Takeuchi , Emmanuel P. Quevy , Tsu-Jae King , Roger T. Howe
发明人： Hideki Takeuchi , Emmanuel P. Quevy , Tsu-Jae King , Roger T. Howe
IPC分类号： H01L21/02
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/0109 , Y10S438/933
摘要： In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
摘要翻译：在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙。

4. 发明申请

US20110121412A1 PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE 有权
公开(公告)号：US20110121412A1
公开(公告)日：2011-05-26
申请号：US13017844
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84 , H01L21/04
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

5. 发明授权

US07923790B1 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
标题翻译：用于真空封装装置的平面微壳和大马士革制造方法
公开(公告)号：US07923790B1
公开(公告)日：2011-04-12
申请号：US11716070
申请日：2007-03-09
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

6. 发明授权

US07858422B1 MEMS coupler and method to form the same 有权
标题翻译： MEMS耦合器和方法形成相同
公开(公告)号：US07858422B1
公开(公告)日：2010-12-28
申请号：US11716227
申请日：2007-03-09
申请人： Emmanuel P. Quevy , Roger T. Howe
发明人： Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H01L21/00
CPC分类号： B81C1/00039 , B81B2201/0271
摘要： A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.
摘要翻译：描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。在一个实施例中，MEMS结构包括构件和衬底。耦合器延伸穿过构件的一部分并将构件与衬底连接。该构件由第一材料构成，并且该耦合器由第二材料构成。在一个实施例中，第一和第二材料基本相同。在一个实施例中，第二材料是导电的并且不同于第一材料。在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

7. 发明授权

US07591201B1 MEMS structure having a compensated resonating member 有权
标题翻译：具有补偿谐振元件的MEMS结构
公开(公告)号：US07591201B1
公开(公告)日：2009-09-22
申请号：US11716285
申请日：2007-03-09
申请人： David H. Bernstein , Roger T. Howe , Emmanuel P. Quevy
发明人： David H. Bernstein , Roger T. Howe , Emmanuel P. Quevy
IPC分类号： F16H33/14
CPC分类号： H03H9/2457 , H03H3/0076 , H03H2009/02496 , Y10T74/11 , Y10T74/113
摘要： A MEMS structure having a compensated resonating member is described. In an embodiment, a MEMS structure comprises a resonating member coupled to a substrate by an anchor. A dynamic mass-load is coupled with the resonating member. The dynamic mass-load is provided for compensating a change in frequency of the resonating member by altering the moment of inertia of the resonating member by way of a positional change relative to the anchor.
摘要翻译：描述了具有补偿谐振元件的MEMS结构。在一个实施例中，MEMS结构包括通过锚固件耦合到衬底的谐振构件。动态质量负载与谐振构件耦合。提供动态质量负载，用于通过相对于锚的位置变化改变谐振构件的惯性矩来补偿谐振构件的频率变化。

8. 发明授权

US07514853B1 MEMS structure having a stress inverter temperature-compensated resonating member 有权
标题翻译： MEMS结构具有应力变换器温度补偿谐振元件
公开(公告)号：US07514853B1
公开(公告)日：2009-04-07
申请号：US11801774
申请日：2007-05-10
申请人： Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
发明人： Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： B81B3/0072 , B81B2201/0271 , H03H3/0076 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02354 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.
摘要翻译：描述具有温度补偿谐振元件的MEMS结构。 MEMS结构包括与基板耦合的应力逆变器部件。谐振构件容纳在应力反转构件中并悬浮在基板上。 MEMS应力逆变器部件用于通过响应于温度变化在谐振部件上引起应力来改变谐振部件的频率的热系数。

9. 发明授权

US06448622B1 Polycrystalline silicon-germanium films for micro-electromechanical systems application 有权
标题翻译：用于微机电系统应用的多晶硅锗膜
公开(公告)号：US06448622B1
公开(公告)日：2002-09-10
申请号：US09617300
申请日：2000-07-17
申请人： Andrea Franke , Roger T. Howe , Tsu-Jae King
发明人： Andrea Franke , Roger T. Howe , Tsu-Jae King
IPC分类号： H01L2982
CPC分类号： B81C1/00246 , B81B2203/0118 , B81C2201/0109 , B81C2203/0735 , Y10S438/933
摘要： This invention relates to micro-electromechanical systems using silicon-germanium films. Such a system includes one or more layers of Si1−xGex, deposited on a substrate, where 0
摘要翻译：本发明涉及使用硅 - 锗膜的微机电系统。这种系统包括沉积在衬底上的一层或多层Si1-xGex，其中0

10. 发明授权

US06250156B1 Dual-mass micromachined vibratory rate gyroscope 有权
标题翻译：双质量微机械振动率陀螺仪
公开(公告)号：US06250156B1
公开(公告)日：2001-06-26
申请号：US09298631
申请日：1999-04-23
申请人： Ashwin A. Seshia , Roger T. Howe
发明人： Ashwin A. Seshia , Roger T. Howe
IPC分类号： G01C1900
CPC分类号： G01C19/5719
摘要： A microfabricated gyroscopic sensor for measuring rotation about a Z-axis. The sensor includes a substrate, a first mass, a second mass, a coupling system connecting the first mass and the second mass, and a suspension system connecting the first mass and the second mass to the substrate. The sensor further includes a drive system to cause the first mass and the second mass to vibrate in an antiphase mode along a drive axis, and a position sensor to measure a displacement of the first mass and the second mass along a sense axis perpendicular to the drive axis and generally parallel to the surface of the substrate, wherein rotation of the first mass and the second mass about the Z-axis perpendicular to the surface of the substrate and vibration of the first mass and the second mass along the drive axis generates a Coriolis force to vibrate the first mass and the second mass along the sense axis in antiphase to each other.
摘要翻译：用于测量围绕Z轴的旋转的微制造陀螺仪传感器。传感器包括基板，第一质量块，第二质量块，连接第一质量块和第二质量块的联接系统，以及将第一质量块和第二质量块连接到衬底的悬架系统。传感器还包括驱动系统，其使第一质量块和第二质量块沿着驱动轴以反相模式振动;以及位置传感器，用于测量第一质量块和第二质量块沿垂直于驱动轴线并且大致平行于基板的表面，其中第一质量块和第二质量块围绕垂直于衬底表面的Z轴的旋转和沿着驱动轴线的第一质量块和第二质量块的振动产生一个科里奥利力使第一质量和第二质量沿着感测轴彼此反相振动。

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