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1. 发明授权

US09720322B2 Photoresist composition, compound, and production method thereof 有权
公开(公告)号：US09720322B2
公开(公告)日：2017-08-01
申请号：US15252553
申请日：2016-08-31
申请人： JSR CORPORATION
发明人： Hayato Namai , Norihiko Ikeda , Takanori Kawakami
IPC分类号： G03F7/004 , C07C381/12 , C07D307/93 , C07D307/94 , C07D311/74 , C07D313/06 , C07D317/24 , C07D319/06 , C07D321/12 , C07D327/04 , C07C309/17 , C07D237/04 , C07D237/16 , C07D493/10 , C07D207/416 , C07D211/46 , C07D295/18 , C07D307/33 , C07D307/64 , C07C309/27 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/027 , G03F7/038 , C07C309/18 , C07D295/185 , C07D307/60 , C07D311/20
CPC分类号： G03F7/0045 , C07C309/17 , C07C309/18 , C07C309/27 , C07C381/12 , C07C2601/08 , C07C2601/10 , C07C2601/14 , C07C2601/18 , C07C2603/74 , C07D207/416 , C07D211/46 , C07D237/04 , C07D237/16 , C07D295/18 , C07D295/185 , C07D307/33 , C07D307/60 , C07D307/64 , C07D307/93 , C07D307/94 , C07D311/20 , C07D311/74 , C07D313/06 , C07D317/24 , C07D319/06 , C07D321/12 , C07D327/04 , C07D493/10 , G03F7/0046 , G03F7/027 , G03F7/038 , G03F7/0388 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A photoresist composition containing (A) a polymer having a structural unit (I) that includes an acid-labile group, and (I) a compound represented by the following formula (1). In the following formula (1), R1, R2, R3 and R represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. X represents a single bond, an oxygen atom or —NRa—. Ra represents a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, and optionally taken together represents a ring structure by binding with R each other. A− represents —SO3− or —CO2−. M+ represents a monovalent onium cation.

2. 发明授权

US09323146B2 Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base 有权
标题翻译：光刻胶组合物，抗蚀剂图案形成法，化合物，酸产生剂和可光降解碱
公开(公告)号：US09323146B2
公开(公告)日：2016-04-26
申请号：US14470108
申请日：2014-08-27
申请人： JSR CORPORATION
发明人： Hayato Namai , Kazuo Nakahara , Norihiko Ikeda
IPC分类号： G03F7/004 , C07D317/70 , G03F7/039 , G03F7/11 , G03F7/20
CPC分类号： G03F7/0045 , C07D317/70 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/20 , G03F7/2041
摘要： A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.
摘要翻译：一种含有具有包含酸不稳定基团的结构单元的聚合物和由式（1）表示的化合物的光致抗蚀剂组合物。在式（1）中，R 1表示氢原子或一价酸不稳定基。 R 2表示碳原子数3〜20的脂环式烃基，（m + 1）价。 m为2〜5的整数.R 3和R 4各自独立地表示氢原子，氟原子，碳原子数1〜20的一价烃基或碳原子数1〜20的1价氟代烃基。 n为0〜5的整数。多个R 1中的至少两个可选地一起表示环结构，以及与R 1结合的多个氧原子和构成R 2的碳原子并键合到这些氧原子上。 M +表示一价可辐射降解的鎓阳离子。

3. 发明授权

US09557641B2 Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound 有权
标题翻译：光刻胶组合物，抗蚀剂图案形成法，酸扩散控制剂和化合物
公开(公告)号：US09557641B2
公开(公告)日：2017-01-31
申请号：US14486532
申请日：2014-09-15
申请人： JSR CORPORATION
发明人： Hayato Namai
IPC分类号： G03F7/004 , G03F7/038 , C07D211/46 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/30
CPC分类号： G03F7/038 , C07D211/46 , G03F7/0045 , G03F7/0046 , G03F7/0388 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30
摘要： A photoresist composition containing: a polymer including an acid-labile group; a radiation-sensitive acid generator; and an acid diffusion control agent that contains a compound represented by a formula (1). In the formula (1), R1, R2 and R3 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. A represents a group having a valency of n that is obtained by combining: a hydrogen atom, a linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms or a combination thereof; —O—, —CO—, —COO—, —SO2O—, —NRSO2—, —NRSO2O—, —NRCO— or a combination thereof; and n nitrogen atoms as a binding site to the carbonyl group in the formula (1), in which a sum of atomic masses of the atoms constituting A is no less than 120. n is an integer of 1 to 4.
摘要翻译：一种光致抗蚀剂组合物，其含有：包含酸不稳定基团的聚合物; 辐射敏感酸发生器; 和含有式（1）表示的化合物的酸扩散控制剂。在式（1）中，R 1，R 2和R 3各自独立地表示氢原子或碳原子数为1〜10的一价烃基。 A表示通过组合氢原子，碳原子数1〜30的直链烃基，碳原子数3〜30的脂环式烃基或其组合而得到的化合价n的基团。 -O - ， - CO - ， - COO - ， - SO 2 O-，-NRSO 2 - ， - NRSO 2 O-，-NRCO-或其组合; 和n个氮原子作为式（1）中的羰基的结合位点，其中构成A的原子的原子质量之和不小于120.n是1至4的整数。

4. 发明授权

US08883023B2 Method for forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08883023B2
公开(公告)日：2014-11-11
申请号：US13630207
申请日：2012-09-28
申请人： JSR Corporation
发明人： Goji Wakamatsu , Hayato Namai , Syun Aoki
IPC分类号： C03C15/00 , G03F7/00 , B44C1/22 , H01L21/00 , G03F7/09
CPC分类号： B44C1/227 , G03F7/00 , G03F7/091 , G03F7/094 , H01L21/00 , Y10S430/118
摘要： A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1 (i)
摘要翻译：形成图案的方法包括提供组合物以在待加工基材的表面上形成抗蚀剂下层膜。组合物含有具有由下式（i）表示的基团的杯芳烃基化合物，其结合至杯芳烃基化合物的至少一部分芳族环或至少一部分杂芳环。用热或酸处理衬底表面上的抗蚀剂下层膜。抗蚀剂图案形成在抗蚀剂下层膜的表面上。使用抗蚀剂图案作为掩模蚀刻抗蚀剂下层膜和基板以在基板上形成图案。用基本溶液从基板上除去干蚀刻的抗蚀剂下层膜。 -O-R1（i）

5. 发明授权

US11966161B2 Radiation-sensitive resin composition, method of forming resist pattern, and compound 有权
公开(公告)号：US11966161B2
公开(公告)日：2024-04-23
申请号：US17854048
申请日：2022-06-30
申请人： JSR CORPORATION
发明人： Takuhiro Taniguchi , Katsuaki Nishikori , Hayato Namai , Kazuya Kiriyama , Ken Maruyama
IPC分类号： G03F7/004 , C07C303/32 , C07C381/12 , C08G75/20 , G03F7/039
CPC分类号： G03F7/0045 , C07C303/32 , C07C381/12 , C08G75/20 , G03F7/0392 , G03F7/0397
摘要： A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

6. 发明授权

US09874816B2 Radiation-sensitive resin composition and resist pattern-forming method 有权
公开(公告)号：US09874816B2
公开(公告)日：2018-01-23
申请号：US15079753
申请日：2016-03-24
申请人： JSR CORPORATION
发明人： Hayato Namai
IPC分类号： G03F7/004 , G03F7/32 , G03F7/038 , G03F7/039 , G03F7/20 , C08F220/30 , C08F220/20 , C08F220/26 , C08F220/18 , H01L21/027 , G03F7/11
CPC分类号： G03F7/325 , C08F220/18 , C08F220/20 , C08F220/26 , C08F220/30 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/039 , G03F7/0397 , G03F7/11 , G03F7/2004 , G03F7/2037 , G03F7/2041 , G03F7/2059 , G03F7/322 , G03F7/327 , H01L21/0271
摘要： A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R1 and R2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.

7. 发明授权

US09477149B2 Photoresist composition, compound, and production method thereof 有权
标题翻译：光刻胶组合物，化合物及其制备方法
公开(公告)号：US09477149B2
公开(公告)日：2016-10-25
申请号：US14491286
申请日：2014-09-19
申请人： JSR CORPORATION
发明人： Hayato Namai , Norihiko Ikeda , Takanori Kawakami
IPC分类号： G03F7/039 , C07C381/12 , C07C309/25 , G03F7/027 , C07D307/93 , C07D307/94 , C07D311/74 , C07D313/06 , C07D317/24 , C07D319/06 , C07D321/12 , C07D327/04 , C07C309/17 , C07D237/04 , C07D237/16 , C07D493/10 , C07D207/416 , C07D211/46 , C07D295/18 , C07D307/33 , C07D307/64 , C07C309/27 , G03F7/004 , G03F7/11 , G03F7/20 , G03F7/038
CPC分类号： G03F7/0045 , C07C309/17 , C07C309/18 , C07C309/27 , C07C381/12 , C07C2601/08 , C07C2601/10 , C07C2601/14 , C07C2601/18 , C07C2603/74 , C07D207/416 , C07D211/46 , C07D237/04 , C07D237/16 , C07D295/18 , C07D295/185 , C07D307/33 , C07D307/60 , C07D307/64 , C07D307/93 , C07D307/94 , C07D311/20 , C07D311/74 , C07D313/06 , C07D317/24 , C07D319/06 , C07D321/12 , C07D327/04 , C07D493/10 , G03F7/0046 , G03F7/027 , G03F7/038 , G03F7/0388 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A photoresist composition containing (A) a polymer having a structural unit (I) that includes an acid-labile group, and (I) a compound represented by the following formula (1). In the following formula (1), R1, R2, R3 and R represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. X represents a single bond, an oxygen atom or —NRa—. Ra represents a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, and optionally taken together represents a ring structure by binding with R each other. A− represents —SO3− or —CO2−. M+ represents a monovalent onium cation.
摘要翻译：一种光致抗蚀剂组合物，其含有（A）具有包含酸不稳定基团的结构单元（I）的聚合物，和（I）由下式（1）表示的化合物。在下式（1）中，R1，R2，R3和R表示氢原子或碳原子数1〜20的1价有机基团。 X表示单键，氧原子或-NR a。 Ra表示氢原子，羟基或碳原子数1〜20的一价有机基团，并且可以一起表示通过与R相互结合的环结构。 A-表示-SO 3 - 或-CO 2 - 。 M +表示单价鎓阳离子。

8. 发明授权

US10824073B2 Radiation-sensitive resin composition and resist pattern-forming method 有权
公开(公告)号：US10824073B2
公开(公告)日：2020-11-03
申请号：US16043283
申请日：2018-07-24
申请人： JSR CORPORATION
发明人： Katsuaki Nishikori , Hayato Namai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , C08F12/22 , C09D125/18 , C08F2/48 , C08F220/18 , C08F220/28 , C08F220/36 , C08F220/38 , C08F212/14 , C08F220/16
摘要： A radiation-sensitive resin composition includes a first compound represented by formula (1), a first polymer comprising an acid-labile group, and a radiation-sensitive acid generator other than the first compound. The radiation-sensitive acid generator includes an onium salt compound. In the formula (1), n is 2 or 3; m is 1 or 2; Y+ represents a monovalent radiation-sensitive onium cation; and L represents a single bond or an organic group having a valency of n. L includes linking moieties each linking two of the carboxylate groups in formula (1). Number of atom(s) included in a linking moiety having a minimum number of bonds among the linking moieties is 0 to 10. In a case where L represents a single bond, n is 2, and in a case where n is 2, m is 1.

9. 发明授权

US10331031B2 Resin composition, resist pattern-forming method and polymer 有权
公开(公告)号：US10331031B2
公开(公告)日：2019-06-25
申请号：US15402514
申请日：2017-01-10
申请人： JSR CORPORATION
发明人： Hayato Namai
IPC分类号： G03F7/09 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/004 , G03F7/038 , G03F7/039 , C08F216/16 , C08F220/28 , C08F220/68 , C09D129/10 , C09D133/10 , C09D133/14
摘要： A resin composition comprises a polymer comprising a structural unit that comprises a group represented by formula (1), and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a fluorine atom or a monovalent organic group having 1 to 20 carbon atoms, wherein at least one of R1 to R4 has the fluorine atom or a group including the fluorine atom. R5 represents a substituted or unsubstituted trivalent chain hydrocarbon group having 1 to 7 carbon atoms. * denotes a binding site to other moiety of the structural unit. The structural unit is preferably represented by any one of formulae (2-1) to (2-3). In the formulae (2-1) to (2-3), Z represents a group represented by formula (1).

10. 发明申请

US20180348633A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING PATTERNED SUBSTRATE 审中-公开
公开(公告)号：US20180348633A1
公开(公告)日：2018-12-06
申请号：US16100501
申请日：2018-08-10
申请人： JSR CORPORATION
发明人： Goji Wakamatsu , Naoya Nosaka , Tsubasa Abe , Kazunori Sakai , Yuushi Matsumura , Hayato Namai
IPC分类号： G03F7/039 , G03F7/11 , G03F7/26
CPC分类号： G03F7/11 , G03F7/26 , H01L21/027
摘要： A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1-R2—CN (1)

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