发明申请
US20180348633A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING PATTERNED SUBSTRATE
审中-公开
基本信息:
- 专利标题： COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING PATTERNED SUBSTRATE
- 申请号：US16100501 申请日：2018-08-10
- 公开(公告)号：US20180348633A1 公开(公告)日：2018-12-06
- 发明人： Goji Wakamatsu , Naoya Nosaka , Tsubasa Abe , Kazunori Sakai , Yuushi Matsumura , Hayato Namai
- 申请人： JSR CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2016-026408 20160215
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/11 ; G03F7/26
摘要：
A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1-R2—CN (1)