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1. 发明授权

US07097886B2 Deposition process for high aspect ratio trenches 有权
标题翻译：高宽比沟槽沉积工艺
公开(公告)号：US07097886B2
公开(公告)日：2006-08-29
申请号：US10319827
申请日：2002-12-13
申请人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
发明人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
IPC分类号： H05H1/24
CPC分类号： H01J37/32082 , C23C16/045 , H01J2237/3327 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/31612 , H01L21/76229
摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.
摘要翻译：一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分处理。在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

2. 发明授权

US07399388B2 Sequential gas flow oxide deposition technique 失效
标题翻译：顺序气流氧化沉积技术
公开(公告)号：US07399388B2
公开(公告)日：2008-07-15
申请号：US10627228
申请日：2003-07-25
申请人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
发明人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
IPC分类号： C23C14/34 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译：一种在基板上沉积石英玻璃绝缘膜的方法。在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

3. 发明授权

US07189639B2 Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
标题翻译：将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用
公开(公告)号：US07189639B2
公开(公告)日：2007-03-13
申请号：US11055141
申请日：2005-02-10
申请人： Padmanabhan Krishnaraj , Michael S. Cox , Bruno Geoffrion , Srinivas D. Nemani
发明人： Padmanabhan Krishnaraj , Michael S. Cox , Bruno Geoffrion , Srinivas D. Nemani
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76837 , H01L21/02126 , H01L21/02274 , H01L21/0234 , H01L21/31604 , H01L21/31612 , H01L21/76224
摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.
摘要翻译：公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

4. 发明授权

US06890597B2 HDP-CVD uniformity control 失效
标题翻译： HDP-CVD均匀性控制
公开(公告)号：US06890597B2
公开(公告)日：2005-05-10
申请号：US10435296
申请日：2003-05-09
申请人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
发明人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
IPC分类号： C23C16/44 , C23C16/455 , C23C16/56 , C23C16/40
CPC分类号： C23C16/45502 , C23C16/45591 , C23C16/56
摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
摘要翻译：沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。通过在衬底上变化的工艺来进行沉积和抛光。不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

5. 发明授权

US08129290B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08129290B2
公开(公告)日：2012-03-06
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

6. 发明申请

US20110209995A1 Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit 审中-公开
标题翻译：物理气相沉积与可变电容调谐器和反馈电路
公开(公告)号：US20110209995A1
公开(公告)日：2011-09-01
申请号：US12823893
申请日：2010-06-25
申请人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
发明人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

7. 发明授权

US07588036B2 Chamber clean method using remote and in situ plasma cleaning systems 失效
标题翻译：室内清洁方法使用远程和原位等离子体清洁系统
公开(公告)号：US07588036B2
公开(公告)日：2009-09-15
申请号：US10187817
申请日：2002-07-01
申请人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
发明人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01J37/32862 , C23C16/4405 , H01J2237/022 , Y10S438/905
摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
摘要翻译：一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

8. 发明授权

US06712020B2 Toroidal plasma source for plasma processing 失效
标题翻译：用于等离子体处理的环形等离子体源
公开(公告)号：US06712020B2
公开(公告)日：2004-03-30
申请号：US10170827
申请日：2002-06-12
申请人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , H01J37/321
摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译：衬底处理室（10）内的环形等离子体源（28）。环形等离子体源形成具有θ对称性的极向等离子体。极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

9. 发明授权

US09580796B2 Deposition apparatus and methods to reduce deposition asymmetry 有权
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US09580796B2
公开(公告)日：2017-02-28
申请号：US13173197
申请日：2011-06-30
申请人： Alan Ritchie , Michael S. Cox
发明人： Alan Ritchie , Michael S. Cox
IPC分类号： C23C14/00 , C23C14/35 , C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C16/517 , H01J37/32651 , H01J37/34 , H01J37/3411 , H01J37/3455
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

10. 发明授权

US08486242B2 Deposition apparatus and methods to reduce deposition asymmetry 失效
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US08486242B2
公开(公告)日：2013-07-16
申请号：US12906632
申请日：2010-10-18
申请人： Michael S. Cox
发明人： Michael S. Cox
IPC分类号： C23C14/35 , C23C16/00
CPC分类号： C23C14/35 , C23C14/34 , C23C16/50 , H01J37/32669 , H01J37/3405
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有导电中空圆柱体和导电中空圆柱体外部的磁体，其能够影响导电中空圆柱体上的电流密度。

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