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    • 5. 发明授权
    • Input buffer having an accelerated signal transition
    • 具有加速信号转换的输入缓冲器
    • US5410189A
    • 1995-04-25
    • US128387
    • 1993-09-27
    • Hy V. Nguyen
    • Hy V. Nguyen
    • H03K19/017H03K5/12
    • H03K19/01721
    • A CMOS buffer includes an input inverter, and a pull-up circuit coupled to the input inverter. The pull-up circuit provides an additional, temporary, signal pull-up on the output terminal of the input inverter during a high to low signal transition on its input terminal. The pull-up circuit includes a means for creating a signal delay. In one embodiment, the means for creating a signal delay includes a second and third inverter in series, the second inverter receiving an output signal from the input inverter. The pull-up circuit further includes two transistors for transferring a high signal to an output line of the input inverter. One transistor is controlled by a signal transferred by the means for creating a delay. The other transistor is controlled by an input signal to the input inverter. This pull-up circuit configuration ensures that the signal transition from low to high is substantially equal to the signal transition from high to low on the output line of the input inverter. The input inverter is then coupled to a driving circuit inverter to provide a CMOS buffer configuration.
    • CMOS缓冲器包括输入反相器和耦合到输入反相器的上拉电路。 上拉电路在输入端子的高电平至低信号转换期间,在输入反相器的输出端子上提供额外的临时信号上拉。 上拉电路包括用于产生信号延迟的装置。 在一个实施例中,用于产生信号延迟的装置包括串联的第二和第三反相器,第二反相器接收来自输入反相器的输出信号。 上拉电路还包括用于将高信号传送到输入反相器的输出线的两个晶体管。 一个晶体管由通过用于产生延迟的装置传送的信号控制。 另一个晶体管由输入反相器的输入信号控制。 该上拉电路配置确保从低电平到高电平的信号转换基本上等于输入逆变器的输出线上从高电平到低电平的信号转换。 然后将输入反相器耦合到驱动电路逆变器以提供CMOS缓冲器配置。
    • 6. 发明授权
    • Single-sided RAM cell and method of accessing same
    • 单面RAM单元及其访问方式
    • US5877979A
    • 1999-03-02
    • US884369
    • 1997-06-26
    • Richard C. LiHy V. NguyenScott S. Nance
    • Richard C. LiHy V. NguyenScott S. Nance
    • G11C11/412G11C11/00
    • G11C11/412
    • A memory system having a single-sided memory cell, a first voltage supply terminal and a control circuit is provided. The single-sided memory cell has a first node and a second node. Data values are written to the memory cell by selectively applying data signals to the first node or the second node, and data values are read from the memory cell from the second node. The control circuit is coupled to receive a data signal having one of a first state and a second state. The control circuit couples the first node of the memory cell to the first voltage supply terminal when the data signal is in the first state, thereby writing a first data value to the memory cell. The control circuit couples the second node of the memory cell to the first voltage supply terminal when the data signal is in the second state, thereby writing a second data value to the memory cell. Because the first voltage supply terminal is used to write both the first and second data values to the memory cell, problems associated with inadequate write voltages are eliminated by appropriate selection of the first supply voltage.
    • 提供具有单面存储单元,第一电压供应端子和控制电路的存储器系统。 单面存储单元具有第一节点和第二节点。 通过选择性地将数据信号应用于第一节点或第二节点,将数据值写入存储器单元,并且从第二节点从存储器单元读取数据值。 控制电路被耦合以接收具有第一状态和第二状态之一的数据信号。 当数据信号处于第一状态时,控制电路将存储单元的第一节点耦合到第一电压提供端,从而将第一数据值写入存储单元。 当数据信号处于第二状态时,控制电路将存储单元的第二节点耦合到第一电压供应端,从而将第二数据值写入存储单元。 因为第一电压供应端用于将第一和第二数据值写入存储单元,所以通过适当地选择第一电源电压来消除与写入电压不足有关的问题。
    • 8. 发明授权
    • Fast signal path for programmable logic device
    • 可编程逻辑器件的快速信号通路
    • US5719506A
    • 1998-02-17
    • US533884
    • 1995-09-26
    • Sholeh DibaHy V. Nguyen
    • Sholeh DibaHy V. Nguyen
    • H03K19/177H03K7/38H03K19/0175
    • H03K19/17736H03K19/17704H03K19/17792
    • Propagation delay along a signal path in a programmable logic device is reduced by providing improved switching and buffering along the device signal path. Such improvement is achieved by providing a separate buffer for each signal path leading from a given device input pad. In this manner, the buffer is smaller without increasing net power consumption. Improved output drivers are also provided in which device sizes are optimized to sink/source larger amounts of current, thereby improving device speed. A feedback arrangement, including a bootstrap device, provides a path that augments the current provided within the output buffer, thereby assisting a low to high signal transition. An improved OR gate is also provided that precharges a gate output line to ensure fast state transition, while eliminating the need for complementary gate switching logic.
    • 通过沿设备信号路径提供改进的切换和缓冲来减少可编程逻辑器件中的信号路径的传播延迟。 通过为从给定的设备输入板引出的每个信号路径提供单独的缓冲器来实现这种改进。 以这种方式,缓冲器较小,而不增加净功率消耗。 还提供了改进的输出驱动器,其中设备尺寸被优化以吸收/输出更大量的电流,从而提高设备速度。 包括自举装置的反馈装置提供增加输出缓冲器内提供的电流的路径,从而辅助低到高的信号转换。 还提供了改进的或门,其预充电栅极输出线以确保快速状态转换,同时不需要互补栅极开关逻辑。
    • 10. 发明授权
    • High-speed output circuit with low voltage capability
    • 具有低电压能力的高速输出电路
    • US06496044B1
    • 2002-12-17
    • US10016950
    • 2001-12-13
    • Hy V. NguyenGubo HuangAndy T. Nguyen
    • Hy V. NguyenGubo HuangAndy T. Nguyen
    • H03K300
    • H03K19/01721H03K19/00315
    • Output circuits that provide compatibility with various input and output voltage levels without sacrificing performance. A pull-up on an output terminal is gated by an internal node, and the invention encompasses various circuits and means for placing a data input signal on this internal node. One embodiment includes a level shifter on the data input path, while also providing an alternative path through the output circuit that bypasses the level shifter. When the input data value goes high, the alternative path quickly places an attenuated high value on the internal node. The level shifter then becomes active and raises the voltage on the internal node to the output power high level, ensuring that the output pull-up is completely off.
    • 输出电路,提供与各种输入和输出电压电平的兼容性,而不会牺牲性能。 输出端子上的上拉由内部节点门控,本发明包括用于在该内部节点上放置数据输入信号的各种电路和装置。 一个实施例包括数据输入路径上的电平移位器,同时还提供绕过电平移位器的输出电路的替代路径。 当输入数据值变高时,替代路径会快速地将衰减的高值放在内部节点上。 电平移位器然后变为有效,并将内部节点上的电压提高到输出功率高电平,确保输出上拉完全关闭。