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1. 发明授权

US06254760B1 Electro-chemical deposition system and method 失效
标题翻译：电化学沉积系统及方法
公开(公告)号：US06254760B1
公开(公告)日：2001-07-03
申请号：US09263649
申请日：1999-03-05
申请人： Ben Shen , Yezdi Dordi , George Birkmaier
发明人： Ben Shen , Yezdi Dordi , George Birkmaier
IPC分类号： G01F164
CPC分类号： C25D7/12 , C25D17/001 , H01L21/2885 , H05K3/241
摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a front-end loading station, a mainframe including one or more processing cells, and an electrolyte replenishing system fluidly connected to the one or more electrical processing cells. The electrolyte replenishing system comprises a main electrolyte supply tank and an analyzer module and dosing module coupled thereto. The analyzer module includes one or more chemical analyzers to monitor the concentrations of various chemicals in the main electrolyte supply tank. Information provided by the analyzer module is transmitted via a central control system to the dosing module. Source tanks in the dosing module communicate with the main supply tank to deliver the desired proportions of chemicals thereto. Preferably, the electrolyte analysis is performed continuously during processing to provide real-time data and electrolyte adjustments.
摘要翻译：本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。电化学沉积系统通常包括前端加载站，包括一个或多个处理单元的主框架和与该一个或多个电处理单元流体连接的电解质补充系统。电解质补充系统包括主要电解质供应罐和与其耦合的分析器模块和计量模块。分析仪模块包括一个或多个化学分析仪，用于监测主要电解质供应罐中各种化学物质的浓度。由分析器模块提供的信息经由中央控制系统传送到计量模块。计量模块中的来源罐与主供应罐连通，以将所需比例的化学品运送到其上。优选地，在处理期间连续执行电解质分析以提供实时数据和电解质调节。

2. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

3. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

4. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

5. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

6. 发明申请

US20120269987A1 Processes and Systems for Engineering a Barrier Surface for Copper Deposition 审中-公开
标题翻译：用于铜沉积的阻挡层表面工艺和系统
公开(公告)号：US20120269987A1
公开(公告)日：2012-10-25
申请号：US13534366
申请日：2012-06-27
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： C23C18/54 , C23C16/06 , B05D5/12
CPC分类号： H01L21/7685 , C23C18/1632 , C23C18/1651 , C23C18/1844 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76867 , H01L21/76871 , H01L21/76879
摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.
摘要翻译：提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

7. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

8. 发明授权

US07875554B2 Method for electroless depositing a material on a surface of a wafer 有权
标题翻译：在晶片的表面上无电沉积材料的方法
公开(公告)号：US07875554B2
公开(公告)日：2011-01-25
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

9. 发明申请

US20100239767A1 Apparatus for Applying a Plating Solution for Electroless Deposition 审中-公开
标题翻译：用于电镀沉积的电镀溶液的设备
公开(公告)号：US20100239767A1
公开(公告)日：2010-09-23
申请号：US12790558
申请日：2010-05-28
申请人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
发明人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
IPC分类号： B05D3/00
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：提供无电镀室。化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。底座具有沿着底座的内径限定的环形通道。该腔室包括连接到环形通道的排水口。排水口能够去除从卡盘收集的流体。能够清洁和基本上干燥基板的接近头包括在腔室中。还提供了一种执行化学镀操作的方法。

10. 发明授权

US07749893B2 Methods and systems for low interfacial oxide contact between barrier and copper metallization 有权
标题翻译：屏障和铜金属化之间的低界面氧化物接触的方法和系统
公开(公告)号：US07749893B2
公开(公告)日：2010-07-06
申请号：US11641361
申请日：2006-12-18
申请人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/4763
CPC分类号： C25D7/123 , C23C18/1653 , C23C28/023 , C23C28/322 , C23C28/34 , C23C28/341 , H01L21/28562 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于半导体器件金属化的方法和系统。本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。该方法还包括在ALD铜上沉积间隙填充铜层。本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。在一个实施例中，集成系统包括至少一个阻挡层沉积模块。该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

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