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    • 4. 发明申请
    • SEMICONDUCTOR STRUCTURE
    • 半导体结构
    • US20140021473A1
    • 2014-01-23
    • US13620725
    • 2012-09-15
    • Tzung-Wei YuFang-An ShuYao-Chou TsaiKuan-Yi Lin
    • Tzung-Wei YuFang-An ShuYao-Chou TsaiKuan-Yi Lin
    • H01L29/786
    • H01L29/7869H01L29/78609H01L29/78633
    • A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.
    • 半导体结构包括栅极,氧化物沟道层,栅极绝缘层,源极,漏极和电介质层叠层。 氧化物沟道层堆叠在栅极上,栅极绝缘层位于它们之间。 源极和漏极设置在氧化物沟道层的一侧并且彼此平行。 氧化物通道层的一部分暴露在源极和漏极之间。 电介质堆叠层设置在基板上,并且包括具有第一折射率的多个第一无机电介质层和交替堆叠的具有第二折射率的多个第二无机电介质层。 第一无机电介质层中的至少一个直接覆盖源极,漏极和氧化物沟道层的部分。 第一折射率小于第二折射率。
    • 8. 发明授权
    • Pixel structure and fabrication method thereof
    • 像素结构及其制造方法
    • US08274085B2
    • 2012-09-25
    • US12789834
    • 2010-05-28
    • Sung-Hui HuangHenry WangFang An ShuTed-Hong Shinn
    • Sung-Hui HuangHenry WangFang An ShuTed-Hong Shinn
    • H01L29/10H01L29/12H01L27/14H01L29/04H01L29/15H01L31/036H01L21/00
    • H01L29/45H01L27/1225H01L27/124H01L27/1255
    • The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.
    • 本发明公开了像素结构及其制造方法。 像素包括在薄膜晶体管区域形成的薄膜晶体管和在像素电极区域形成的存储电容器。 该方法包括:在衬底上形成栅极导电层; 在栅极导电层上形成栅极绝缘层; 在所述栅极绝缘层上形成源极导电层和漏极导电层,其中所述漏极导电层具有延伸到所述像素电极区域的延伸部分; 在源极导电层和漏极导电层上形成沟道层; 以及在沟道层上形成保护层。 延伸部分和电极层分别用作存储电容器的上部和下部电极。 其中栅极导电层,源极导电层,漏极导电层和沟道层由金属氧化物制成。