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    • 5. 发明申请
    • ACTIVE ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    • 主动阵列基板及其制造方法
    • US20130043474A1
    • 2013-02-21
    • US13481962
    • 2012-05-29
    • Wen-Chung TANGFang-An SHUYao-Chou TSAITed-Hong SHINN
    • Wen-Chung TANGFang-An SHUYao-Chou TSAITed-Hong SHINN
    • H01L29/786H01L21/336
    • H01L27/1288
    • Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.
    • 这里公开了一种制造有源阵列基板的方法。 该方法包括以下步骤:在衬底上形成第一图案化金属层; 依次形成半导体层,绝缘层和第二金属层以覆盖第一图案化金属层; 在所述第二金属层上形成图案化的光致抗蚀剂层; 图案化第二金属层,绝缘层和半导体层以形成第二图案化金属层,图案化绝缘层和图案化半导体层,以及去除图案化光致抗蚀剂层的一部分; 加热图案化光致抗蚀剂层的剩余部分,使得剩余部分被流化并转变成保护层; 并形成像素电极。
    • 10. 发明申请
    • Method for forming oxide thin film transistor
    • 氧化物薄膜晶体管的形成方法
    • US20110189818A1
    • 2011-08-04
    • US12774562
    • 2010-05-05
    • Ted-Hong SHINNHenry WANGFang-An SHUYao-Chou TSAI
    • Ted-Hong SHINNHenry WANGFang-An SHUYao-Chou TSAI
    • H01L21/34
    • H01L29/78693H01L21/34H01L29/1083H01L29/78609
    • A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
    • 制造氧化物薄膜晶体管的方法包括以下步骤:分别形成栅极,漏极,源电极和氧化物半导体层。 氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。 该方法还包括沉积氧化硅的介电层的步骤,并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。 一氧化二氮的流量在10至200标准立方厘米每分钟(SCCM)的范围内。 通过上述方法制造的氧化物薄膜晶体管具有漏电流低,迁移率高的优点,其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。