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1. 发明授权

US08941138B2 Semiconductor structure comprising a stacked dielectric layer 有权
标题翻译：半导体结构包括层叠电介质层
公开(公告)号：US08941138B2
公开(公告)日：2015-01-27
申请号：US13620725
申请日：2012-09-15
申请人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
发明人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
IPC分类号： G02F1/1335
CPC分类号： H01L29/7869 , H01L29/78609 , H01L29/78633
摘要： A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.
摘要翻译：半导体结构包括栅极，氧化物沟道层，栅极绝缘层，源极，漏极和电介质层叠层。氧化物沟道层堆叠在栅极上，栅极绝缘层位于它们之间。源极和漏极设置在氧化物沟道层的一侧并且彼此平行。氧化物通道层的一部分暴露在源极和漏极之间。电介质堆叠层设置在基板上，并且包括具有第一折射率的多个第一无机电介质层和交替堆叠的具有第二折射率的多个第二无机电介质层。第一无机电介质层中的至少一个直接覆盖源极，漏极和氧化物沟道层的部分。第一折射率小于第二折射率。

2. 发明申请

US20140021473A1 SEMICONDUCTOR STRUCTURE 有权
标题翻译：半导体结构
公开(公告)号：US20140021473A1
公开(公告)日：2014-01-23
申请号：US13620725
申请日：2012-09-15
申请人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
发明人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78609 , H01L29/78633
摘要： A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.
摘要翻译：半导体结构包括栅极，氧化物沟道层，栅极绝缘层，源极，漏极和电介质层叠层。氧化物沟道层堆叠在栅极上，栅极绝缘层位于它们之间。源极和漏极设置在氧化物沟道层的一侧并且彼此平行。氧化物通道层的一部分暴露在源极和漏极之间。电介质堆叠层设置在基板上，并且包括具有第一折射率的多个第一无机电介质层和交替堆叠的具有第二折射率的多个第二无机电介质层。第一无机电介质层中的至少一个直接覆盖源极，漏极和氧化物沟道层的部分。第一折射率小于第二折射率。

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