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1. 发明授权

US07187143B2 Mover device and semiconductor manufacturing apparatus and method 有权
标题翻译：移动装置及半导体制造装置及方法
公开(公告)号：US07187143B2
公开(公告)日：2007-03-06
申请号：US10781756
申请日：2004-02-20
申请人： Keiji Okada , Yoshitomo Hidaka , Michiro Sugitani , Junichi Murakami , Fumiaki Sato , Mitsukuni Tsukihara , Suguru Hirokawa , Masamitsu Shinozuka
发明人： Keiji Okada , Yoshitomo Hidaka , Michiro Sugitani , Junichi Murakami , Fumiaki Sato , Mitsukuni Tsukihara , Suguru Hirokawa , Masamitsu Shinozuka
IPC分类号： H02P1/00
CPC分类号： H01L21/67709 , Y10T74/15
摘要： A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.
摘要翻译：提供了具有处理基座的移动装置和离子注入机装置，该处理基座高速往复运动而没有不期望的噪声和振动。动子装置包括：固定基座; 可移动基座，其相对于固定基座线性移动; 处理基座，其相对于所述可动基座线性移动; 主线性电动机，其产生相对于可移动基座移动处理基座的移动力，从而相对于固定基座移动处理基座; 以及速度控制单元，其控制所述处理基座相对于所述固定基座的移动速度。在这种移动装置中，可移动基座由于由移动力引起的反作用力而移动，以移动处理基座。

2. 发明授权

US07138641B2 Beam deflecting method, beam deflector for scanning, ion implantation method, and ion implantation system 有权
标题翻译：光束偏转方法，扫描光束偏转器，离子注入法和离子注入系统
公开(公告)号：US07138641B2
公开(公告)日：2006-11-21
申请号：US11139490
申请日：2005-05-31
申请人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
IPC分类号： G01N23/00 , G21K7/00 , G21G5/00
CPC分类号： H01J37/1477 , H01J37/3171
摘要： A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.
摘要翻译：用于扫描的光束偏转器执行在真空空间中具有规则轨迹的带电粒子束的偏转，从而周期性地改变带电粒子束的轨迹。光束偏转器包括一对偏转电极，其设置成面对每个内电极表面，其具有沿光束轨迹的方向延伸的对称凹部。

3. 发明申请

US20060182532A1 Wafer processing system, wafer processing method, and ion implantation system 有权
标题翻译：晶圆处理系统，晶圆加工方法和离子注入系统
公开(公告)号：US20060182532A1
公开(公告)日：2006-08-17
申请号：US11254854
申请日：2005-10-21
申请人： Keiji Okada , Fumiaki Sato , Hiroaki Nakaoka
发明人： Keiji Okada , Fumiaki Sato , Hiroaki Nakaoka
IPC分类号： B65G1/00
CPC分类号： H01L21/67213 , H01L21/67201 , H01L21/67745
摘要： Two load lock chambers having a load lock pedestal are provided adjacent to a vacuum process chamber through a vacuum intermediate chamber. A passage opening is provided between the vacuum process chamber and the vacuum intermediate chamber. Two wafer retaining arms are installed between a platen device in the vacuum process chamber and the vacuum intermediate chamber. The two wafer retaining arms are reciprocatingly movable between the corresponding load lock pedestals and the platen device while passing through the passage opening and crossing with an overpass each other at different levels. By retaining an unprocessed wafer by one of the wafer retaining arms and retaining a processed wafer by the other wafer retaining arm, transfer of the unprocessed wafer from one of the load lock pedestals to the platen device and transfer of the processed wafer from the platen device to the other load lock pedestal are performed simultaneously.
摘要翻译：具有负载锁定基座的两个负载锁定室通过真空中间室邻近真空处理室设置。在真空处理室和真空中间室之间设有通道开口。两个晶片保持臂安装在真空处理室中的压板装置和真空中间室之间。两个晶片保持臂在相应的负载锁定基座和压板装置之间可往复运动，同时穿过通道开口并与不同级别的立交桥交叉。通过用晶片保持臂中的一个保持未加工的晶片并通过另一个晶片保持臂保持经处理的晶片，将未加工的晶片从负载锁定基座之一转移到压板装置，并将经处理的晶片从压板装置到另一个负载锁定基座同时进行。

4. 发明申请

US20040251432A1 Ion implanter and method for controlling the same 失效
标题翻译：离子注入机及其控制方法
公开(公告)号：US20040251432A1
公开(公告)日：2004-12-16
申请号：US10864343
申请日：2004-06-10
申请人： Sumitomo Eaton Nova Corporation
发明人： Makoto Sano , Michiro Sugitani , Mitsuaki Kabasawa , Mitsukuni Tsukihara
IPC分类号： H01J037/304
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/31703
摘要： The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.
摘要翻译：本发明适用于设置有真空压力补偿机构的离子注入机。压力补偿机构对初步注入中的晶片附近的测量束电流和真空压力进行采样，并将功能参数存储在存储器单元中，该功能参数通过计算测量的光束电流和真空压力之间的关系来计算预定功能的参数而获得。在实际植入中，压力补偿机构使用作为真空压力的函数存储的功能参数来校正测量的束电流，并且基于校正的束电流，执行剂量控制。在本发明中，基于从质量分析狭缝下游的区域中的晶片附近的压力的估计来补偿实际的光束损失。

5. 发明授权

US5030835A Ion implantation capable of uniformly injecting an ion beam into a substrate 失效
标题翻译：能够将离子束均匀地注入到衬底中的离子注入
公开(公告)号：US5030835A
公开(公告)日：1991-07-09
申请号：US439537
申请日：1989-11-21
申请人： Tadamoto Tamai , Junichi Murakami
发明人： Tadamoto Tamai , Junichi Murakami
IPC分类号： H01J37/20 , C23C14/48 , C23C14/50 , H01J37/317 , H01L21/265
CPC分类号： C23C14/50 , C23C14/48
摘要： In an ion implantation apparatus for injecting an ion beam into a substrate at a controllable incident angle, the substrate (13a) is supported by a supporting section which comprises a disc shaped plate (13) for locating the substrate thereon and an injecting chamber (11) for disposing the disc shaped plate therein. The substrate is irradiated by the ion beam. The ion implantation apparatus comprises a first controlling section (20, 23) and a second controlling section (34). The first controlling section controls the supporting section so as to change a location of the substrate in relation to the ion beam. The second controlling section controls supporting section so as to change the controllable incident angle relative to the ion beam.

6. 发明授权

US4994674A Ion implantation apparatus capable of avoiding electrification of a substrate 失效
标题翻译：能够避免基板带电的离子注入装置
公开(公告)号：US4994674A
公开(公告)日：1991-02-19
申请号：US520557
申请日：1990-05-08
申请人： Tadamoto Tamai , Junichi Murakami
发明人： Tadamoto Tamai , Junichi Murakami
IPC分类号： H01J37/02 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/026
摘要： In an ion implantation apparatus which is for use in injecting an ion beam (11) onto a wafer (12) in a predetermined direction and which comprises an electric conductor tube (14) divided into a first tube section (17) and a second tube section (18) along the predetermined direction with an insulator interposed therebetween. The first tube section is located in proximity of the wafer and is grounded while the second tube section is remote from the wafer to be used as a target section which is bombarded by primary electrons to generate secondary electrons directed to the wafer. Undesired electrons are trapped by the first tube section and flow through the ground.The electric conductor tube may further comprise a third tube section (21) which is electrically insulated from the second tube section and which is remote from the wafer in comparison with the second tube section in the predetermined direction. The first and the third tube sections are controlled so as to adjust their diameters in dependency upon a diameter of the ion beam.

7. 发明授权

US4904902A Ion implanting system 失效
标题翻译：离子注入系统
公开(公告)号：US4904902A
公开(公告)日：1990-02-27
申请号：US181765
申请日：1988-04-14
申请人： Tadamoto Tamai , Masateru Sato
发明人： Tadamoto Tamai , Masateru Sato
IPC分类号： C23C14/54 , C23C14/48 , G01R29/24 , H01J37/02 , H01J37/317 , H01L21/265 , H01L21/66
CPC分类号： H01J37/026 , H01J37/3171
摘要： In an ion implanting apparatus, a first conductor member for monitoring the charge-up of the workpiece is positioned on the front face of a wafer disk, a second conductor member electrically connected with the first conductor member for distributing the charge on the first conductor member is positioned on the rear face of the wafer disk, and a third conductor capable of forming capacitive coupling with the second conductor member is fixed to a disk chamber. When the first conductor member is charged, the charge is distributed also to the second conductor member. When the second conductor member passes by the third conductor member by the rotation of the disk, charge is induced on the third conductor member depending on the charged state of the second conductor member. The first, the second and the third conductor members can be effectively shielded from the surroundings. Charge detection with a high S/N ratio is made possible.
摘要翻译：在离子注入装置中，用于监视工件的充电的第一导体构件位于晶片盘的正面上，第二导体构件与第一导体构件电连接，用于将电荷分配在第一导体构件位于晶片盘的背面，并且能够与第二导体构件形成电容耦合的第三导体被固定到盘室。当第一导体构件被充电时，电荷也分配给第二导体构件。当第二导体构件通过盘的旋转通过第三导体构件时，根据第二导体构件的充电状态，在第三导体构件上感应电荷。第一，第二和第三导体构件可以被有效地屏蔽环境。具有高S / N比的充电检测成为可能。

8. 发明申请

US20060113493A1 Irradiation system ion beam and method to enhance accuracy of irradiation 有权
标题翻译：照射系统离子束和提高照射精度的方法
公开(公告)号：US20060113493A1
公开(公告)日：2006-06-01
申请号：US11202111
申请日：2005-08-12
申请人： Mitsuaki Kabasawa , Mitsukuni Tsukihara
发明人： Mitsuaki Kabasawa , Mitsukuni Tsukihara
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/023 , H01J37/05 , H01J37/1474 , H01J37/1478 , H01J37/15 , H01J37/3007 , H01J2237/0041 , H01J2237/0213 , H01J2237/022 , H01J2237/0458 , H01J2237/047 , H01J2237/0492 , H01J2237/061 , H01J2237/0835 , H01J2237/1536 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/30477 , H01J2237/31705
摘要： The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.
摘要翻译：本发明是提高具有光束的照射系统的光束照射精度的方法。照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

9. 发明申请

US20060113492A1 Wafer charge compensation device and ion implantation system having the same 有权
标题翻译：晶圆电荷补偿装置和具有相同的离子注入系统
公开(公告)号：US20060113492A1
公开(公告)日：2006-06-01
申请号：US11151308
申请日：2005-06-14
申请人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
发明人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
IPC分类号： H01J37/08
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要翻译：根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

10. 发明申请

US20060113467A1 Irradiation system with ion beam/charged particle beam 有权
标题翻译：带离子束/带电粒子束的照射系统
公开(公告)号：US20060113467A1
公开(公告)日：2006-06-01
申请号：US11202101
申请日：2005-08-12
申请人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
发明人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
IPC分类号： B01D59/44
CPC分类号： H01J37/05 , H01J37/317 , H01J49/26
摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.
摘要翻译：在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

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