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1. 发明授权

US07304319B2 Wafer charge compensation device and ion implantation system having the same 有权
标题翻译：晶圆电荷补偿装置和具有相同的离子注入系统
公开(公告)号：US07304319B2
公开(公告)日：2007-12-04
申请号：US11151308
申请日：2005-06-14
申请人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
发明人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
IPC分类号： H01J37/317
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要翻译：根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

2. 发明申请

US20060113492A1 Wafer charge compensation device and ion implantation system having the same 有权
标题翻译：晶圆电荷补偿装置和具有相同的离子注入系统
公开(公告)号：US20060113492A1
公开(公告)日：2006-06-01
申请号：US11151308
申请日：2005-06-14
申请人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
发明人： Hiroshi Kawaguchi , Makoto Sano , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Takashi Kuroda , Kazunari Ueda , Hiroshi Sogabe
IPC分类号： H01J37/08
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.
摘要翻译：根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

3. 发明授权

US07315034B2 Irradiation system with ion beam/charged particle beam 有权
标题翻译：带离子束/带电粒子束的照射系统
公开(公告)号：US07315034B2
公开(公告)日：2008-01-01
申请号：US11202101
申请日：2005-08-12
申请人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
发明人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
IPC分类号： H01J37/147
CPC分类号： H01J37/05 , H01J37/317 , H01J49/26
摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.
摘要翻译：在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

4. 发明申请

US20060113467A1 Irradiation system with ion beam/charged particle beam 有权
标题翻译：带离子束/带电粒子束的照射系统
公开(公告)号：US20060113467A1
公开(公告)日：2006-06-01
申请号：US11202101
申请日：2005-08-12
申请人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
发明人： Takanori Yagita , Takashi Nishi , Michiro Sugitani , Junichi Murakami , Mitsukuni Tsukihara , Mitsuaki Kabasawa , Masaki Ishikawa , Tetsuya Kudo
IPC分类号： B01D59/44
CPC分类号： H01J37/05 , H01J37/317 , H01J49/26
摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.
摘要翻译：在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

5. 发明授权

US06984833B2 Ion implanter and method for controlling the same 失效
标题翻译：离子注入机及其控制方法
公开(公告)号：US06984833B2
公开(公告)日：2006-01-10
申请号：US10864343
申请日：2004-06-10
申请人： Makoto Sano , Michiro Sugitani , Mitsuaki Kabasawa , Mitsukuni Tsukihara
发明人： Makoto Sano , Michiro Sugitani , Mitsuaki Kabasawa , Mitsukuni Tsukihara
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/31703
摘要： The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.
摘要翻译：本发明适用于设置有真空压力补偿机构的离子注入机。压力补偿机构对初步注入中的晶片附近的测量束电流和真空压力进行采样，并将功能参数存储在存储器单元中，该功能参数通过计算测量的光束电流和真空压力之间的关系来计算预定功能的参数而获得。在实际植入中，压力补偿机构使用作为真空压力的函数存储的功能参数来校正测量的束电流，并且基于校正的束电流，执行剂量控制。在本发明中，基于从质量分析狭缝下游的区域中的晶片附近的压力的估计来补偿实际的光束损失。

6. 发明授权

US06573517B1 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US06573517B1
公开(公告)日：2003-06-03
申请号：US09629622
申请日：2000-07-31
申请人： Michiro Sugitani , Mitsukuni Tsukihara , Yoshitomo Hidaka , Mitsuaki Kabasawa , Kouji Inada
发明人： Michiro Sugitani , Mitsukuni Tsukihara , Yoshitomo Hidaka , Mitsuaki Kabasawa , Kouji Inada
IPC分类号： H01J3708
CPC分类号： G21K1/08 , H01J37/147 , H01J37/3171 , H01J2237/31705
摘要： An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.
摘要翻译：离子注入装置具有离子源，质量分析用磁体，加速/减速元件以及偏转元件。质量分析磁体对从离子源提取的离子束进行质量分析。加速/去纤维元件在后期加速和减速离子束。偏转元件布置在质量分析磁体和加速/减速元件之间。偏转元件的每个方向角被确定为使得在被引入晶片衬底之前的预定区域中的最终光束轨迹在偏转元件的操作模式和非操作模式中彼此匹配。

7. 发明授权

US06797968B2 Ion beam processing method and apparatus therefor 有权
标题翻译：离子束处理方法及其设备
公开(公告)号：US06797968B2
公开(公告)日：2004-09-28
申请号：US10329560
申请日：2002-12-27
申请人： Mitsukuni Tsukihara , Yoshitaka Amano , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Yoshitaka Amano , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
IPC分类号： H01J3708
CPC分类号： H01J37/3171 , H01J37/3007
摘要： An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.
摘要翻译：离子束处理装置包括从离子源到处理室的束线真空室。该装置还包括用于将来自离子源的离子束通过束线真空室输送到处理室的束线结构。在束线真空室的部分部分中从外部布置质量分析磁体单元。质量分析磁体单元的有效磁场面积设置在束线结构的局部剖面中。连续尖点场形成磁体装置布置在束线结构的束线真空室系列的一部分中，以通过形成连续尖点场来限制离子束。

8. 发明授权

US06794661B2 Ion implantation apparatus capable of increasing beam current 有权
标题翻译：离子注入装置能够增加束流
公开(公告)号：US06794661B2
公开(公告)日：2004-09-21
申请号：US10118064
申请日：2002-04-09
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , G21K1/08 , H01J2237/004
摘要： In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.
摘要翻译：在根据本发明的离子注入装置中，借助于提取电极从离子源提取离子。通过质量分析磁体装置和质量分析狭缝对由此提取的离子进行质量分析，从而将所需的离子注入到基板中。用于产生尖点磁场的磁体沿着从质量分析磁铁装置的前部延伸到后部的离子束线串联设置。

9. 发明授权

US06635889B2 Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof 有权
公开(公告)号：US06635889B2
公开(公告)日：2003-10-21
申请号：US10050843
申请日：2002-01-18
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yuji Takahashi , Michiro Sugitani
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yuji Takahashi , Michiro Sugitani
IPC分类号： H01J3708
CPC分类号： H01J37/3171 , H01J37/08
摘要： An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.

10. 发明授权

US07597531B2 Method of controlling mover device 失效
标题翻译：控制动力装置的方法
公开(公告)号：US07597531B2
公开(公告)日：2009-10-06
申请号：US11044632
申请日：2005-01-28
申请人： Keiji Okada , Michiro Sugitani , Yoshitomo Hidaka , Junichi Murakami , Fumiaki Sato , Mitsukuni Tsukihara , Suguru Hirokawa , Masamitsu Shinozuka
发明人： Keiji Okada , Michiro Sugitani , Yoshitomo Hidaka , Junichi Murakami , Fumiaki Sato , Mitsukuni Tsukihara , Suguru Hirokawa , Masamitsu Shinozuka
IPC分类号： B65H1/00 , C23C16/00 , C23F1/00 , H01L21/306 , H02K41/00
CPC分类号： H01L21/67706 , H01L21/67709 , Y10S414/135
摘要： Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.
摘要翻译：本发明的实施例涉及一种控制移动器装置的方法。该方法包括从移动力产生单元产生移动力以相对于可移动基座移动处理基座，从而相对于固定基座移动处理基座作为处理基座相对于可移动基座移动的结果; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动在与固定基座上的处理基座的移动方向相反的方向上。该方法还包括控制处理基座相对于固定基座的移动速度。

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