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    • 3. 发明公开
    • 반도체 장치 제작 방법
    • 制造半导体器件的方法
    • KR1020080020569A
    • 2008-03-05
    • KR1020070087787
    • 2007-08-30
    • 가부시키가이샤 한도오따이 에네루기 켄큐쇼
    • 혼다타츠야아라이야스유키
    • H01L29/786H01L21/027
    • H01L27/1225H01L27/3244H01L29/7869Y10T428/12917G03F1/38
    • A method for fabricating a semiconductor device is provided to form a TFT(thin film transistor) that has high mobility and doesn't need to form a BM(black matrix), by using zinc oxide that doesn't absorb visible light. A first semiconductor layer is formed on a substrate(101). A first region of the first semiconductor layer to which a laser beam is irradiated through a region not having a shielding material of a photomask(105) is sublimate, and a second region of the first semiconductor layer to which the laser beam is not irradiated by using a mask as a region having a shielding material of the photomask is not sublimated, so that a laser beam is irradiated to the first semiconductor layer through the photomask including a shielding material for shielding the laser beam so as to form an island-type semiconductor layer. The first semiconductor layer can be one of a zinc compound semiconductor layer or an oxide semiconductor layer.
    • 提供一种制造半导体器件的方法,通过使用不吸收可见光的氧化锌,形成具有高迁移率并且不需要形成BM(黑矩阵)的TFT(薄膜晶体管)。 在基板(101)上形成第一半导体层。 通过不具有光掩模(105)的屏蔽材料的区域照射激光束的第一半导体层的第一区域是升华的,并且第一半导体层的不被激光束照射的第二区域被激光束照射 使用掩模作为具有光掩模的屏蔽材料的区域不升华,使得激光束通过包括用于屏蔽激光束的屏蔽材料的光掩模照射到第一半导体层,以形成岛状半导体 层。 第一半导体层可以是锌化合物半导体层或氧化物半导体层之一。
    • 5. 发明授权
    • 연마 용구에 사용되는 제거가능한 결합제
    • 연마용구에사용되는제거가능한결합제
    • KR100375649B1
    • 2003-03-15
    • KR1019997001602
    • 1997-08-27
    • 생-고뱅 어브레이시브즈, 인코포레이티드
    • 슈렌-캐애가토마스더블유밀러브래들리제이블잔세르게이-토미슬라브
    • B24D3/06
    • B24D3/06Y10T428/12493Y10T428/12576Y10T428/1291Y10T428/12917Y10T428/12951Y10T428/26
    • A bond for, a metal single layer abrasive tool can be easily chemically and electrochemically stripped from the metal core of a recovered used tool to facilitate reuse of the core. Relative to conventionally bonded tools, the speed of stripping the novel bond is quick, and the stripped core has a smooth, clean surface which needs only minimal mechanical repair prior to reuse. The composition of the novel bond consists essentially of copper, tin and titanium. It can be brazed at temperatures below diamond graphitization and is chemically compatible with diamond. Hence, the bond is particularly useful for the manufacture of large diameter, superabrasive metal single layer abrasive wheels employed in the construction industry. The bond can be applied to the cutting surface of the abrasive tool as a uniform mixture of bronze alloy, titanium compound and copper powders. The powders may be mixed with a liquid vehicle and applied as a paste. The method of brazing the bond incorporates heating the bond composition to a temperature at most about 880 DEG C to melt the bronze alloy and titanium compound components, and raising the temperature to at least about 900 DEG C to dissolve the copper. The bond can also include an about 10-200 mu m thick barrier layer of copper coating the cutting surface between the core and the bond composition.
    • 用于金属单层研磨工具的粘合剂可以容易地从回收的使用过的工具的金属芯上化学和电化学剥离,以便于芯的再使用。 相对于传统的粘合工具,剥离新粘合剂的速度很快,剥离的芯子具有光滑,干净的表面,在重新使用之前仅需要最小的机械修复。 新键的组成基本上由铜,锡和钛组成。 它可以在低于金刚石石墨化的温度下钎焊并且与钻石化学兼容。 因此,这种粘结对于制造建筑行业中使用的大直径,超级磨料金属单层砂轮特别有用。 该结合剂可以作为青铜合金,钛化合物和铜粉的均匀混合物施加到研磨工具的切割表面。 粉末可以与液体载体混合并作为糊剂施用。 钎焊粘结的方法包括将粘结组合物加热到最高约880℃的温度以熔化青铜合金和钛化合物组分,并将温度升高到至少约900℃以溶解铜。 该粘结还可以包括在芯和粘结剂组合物之间涂覆切割表面的约​​10-200μm厚的铜阻挡层。