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    • 5. 发明公开
    • CVD용 전구체로서 사용되는 낮은 불순물 함량의유기실리콘 생성물
    • 低成本有机硅产品作为CVD的前身
    • KR1020070118979A
    • 2007-12-18
    • KR1020070057781
    • 2007-06-13
    • 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
    • 마요르가,스티븐게라드오’닐,마크레오나드첸들러,켈리앤
    • C08L83/06C08K3/16C08L83/00
    • C07F7/20C07F7/1868
    • A low-impurity organic silicon composition used as a precursor for chemical vapor deposition is provided to prevent precipitation of chloride salts when mixed with another organosilane precursor when forming an interlayer dielectric in an electronic device through CVD. A low-impurity organic silicon composition comprises: at least one organosilicon selected from an alkoxysilane and carboxylsilane; a dissolved remaining chloride having a first concentration; and a scavenger for the dissolved remaining chloride having a first concentration. The organosilicon composition has a first Ksp(os) defined by [the first concentration of the dissolved remaining chloride in ppm]^x (wherein x is 1, 2, 3 or 4) multiplied by [the first concentration of the scavenger for the dissolved remaining chloride in ppm]. The first concentration of the dissolved remaining chloride is less than the square root of the first Ksp(os) when x is 1, less than the cube root of the first Ksp(os) when x is 2, less than the 4th root of the first Ksp(os) when x is 3, or less than the 5th root of the first Ksp(os). The first concentration of the scavenger for the dissolved remaining chloride is less than the square root of the first Ksp(os) when x is 1, less than the cube root of the first Ksp(os) when x is 2, less than the 4th root of the first Ksp(os) when x is 3, or less than the 5th root of the first Ksp(os).
    • 提供了用作化学气相沉积前体的低杂质有机硅组合物,以便通过CVD在电子器件中形成层间电介质时与其它有机硅烷前体混合时防止氯化物沉淀。 低杂质有机硅组合物包含:至少一种选自烷氧基硅烷和羧基硅烷的有机硅; 具有第一浓度的溶解的剩余氯化物; 以及具有第一浓度的溶解的剩余氯化物的清除剂。 有机硅组合物具有由[溶解的剩余氯化物的第一浓度(ppm)]×(其中x为1,2,3或4)乘以[溶解的清除剂的第一浓度]定义的第一Ksp(os) 剩余氯化物,ppm]。 当x为1时,溶解的剩余氯化物的第一浓度小于第一Ksp(os)的平方根,当x为2时小于第一Ksp(os)的立方根,小于第 第一个Ksp(os),当x为3时,或小于第一个Ksp(os)的第5个根。 当x为1时,溶解的残留氯化物的清除剂的第一浓度小于第一Ksp(os)的平方根,当x为2时小于第一Ksp(os)的立方根,小于第四 当x为3时,或小于第一个Ksp(os)的第5个根的第一个Ksp(os)的根。