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    • 3. 发明公开
    • 유기 금속 화합물
    • 适用于沉积工艺的特殊有机化合物
    • KR1020040086811A
    • 2004-10-12
    • KR1020040022845
    • 2004-04-02
    • 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
    • 셰나이-카트카테데오다타비나약파우어마이클브렌던
    • C23C16/18
    • C23C16/28C07C391/00C07C395/00C07F7/0807C07F7/0827C07F7/30C23C16/18
    • PURPOSE: To provide an organometallic compound suitably used as a vapor phase deposition precursor for IV group metal-containing films, and a method for depositing IV group metal-containing films using a specific organometallic precursor, wherein the IV group metal-containing films are particularly useful in fabrication of electronic devices. CONSTITUTION: The method for depositing a metal-containing film on a substrate comprises a step(a) of conveying one or more organometallic compounds of the following chemical formula 1 as a gas phase to a deposition chamber including a substrate; a step(b) of decomposing the one or more organometallic compounds in the deposition chamber; and a step(c) of depositing a metal film on the substrate: where M is Si or Ge; R¬1 and R¬2 are independently selected from hydrogen, alkyl, alkenyl, alkynyl and aryl; each R¬3 is independently selected from (C1-C12)alkyl, alkenyl, alkynyl and aryl provided that R¬3 is not cyclopentadienyl; each R¬4 is independently selected from (C3-C12)alkyl; X is halogen; a is 0 to 3; b is 0 to 3; c is 0 to 3; d is 0 to 2; e is 0 to 4; a+b+c+d=4, R¬3 is different from R¬4, and the sums of a+b and a+d are each 3 or less; and the sum of b+c is 3 or less provided that M is Si.
    • 目的:提供一种适合用作含IV族金属的膜的气相沉积前体的有机金属化合物,以及使用特定的有机金属前体沉积含IV族金属的膜的方法,其中含IV族金属的膜是特别的 可用于制造电子设备。 构成:在基材上沉积含金属膜的方法包括将一种或多种下列化学式1的有机金属化合物作为气相输送到包括基材的沉积室的步骤(a) 分解沉积室中的一种或多种有机金属化合物的步骤(b); 以及在所述基板上沉积金属膜的步骤(c):其中M是Si或Ge; R 1和R 2独立地选自氢,烷基,烯基,炔基和芳基; 每个R 3独立地选自(C 1 -C 12)烷基,烯基,炔基和芳基,条件是R 3不是环戊二烯基; 每个R 4独立地选自(C 3 -C 12)烷基; X是卤素; a是0到3; b为0〜3; c为0〜3; d为0〜2; e为0〜4; a + b + c + d = 4,R 3与R 4不同,a + b和a + d之和分别为3以下。 并且如果M是Si,则b + c的和为3以下。