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    • 4. 发明公开
    • 폐쇄형 발포 알루미늄의 제조방법 및 장치
    • 封闭系统结构和制备装置中的泡沫铝的制备方法
    • KR1020020004755A
    • 2002-01-16
    • KR1020000038963
    • 2000-07-07
    • 주식회사 듀어폼테크
    • 김병삼조순형우준하박현구
    • C01F7/00
    • C01F7/00C04B35/515C04B35/63
    • PURPOSE: Provided is a preparation method of foamed aluminum which is characterized in that thickened Al-melt is foamed and cooled in a chamber equipped with a foaming furnace and a mold unlike a conventional direct pouring method demanding separate foaming and cooling furnaces. Accordingly, the method prepares high quality foamed alumina in a low cost and high yield. CONSTITUTION: The preparation method comprises the steps of: thickening Al-melt by adding stabilized Ca alloy, Ca-10-30wt.% of Al alloy, to Al-melt(700-750deg.C) in a thickening furnace; pouring the thickened Al-melt into a foaming space formed by the side wall(3) of a foaming furnace(C) and the bottom of a cooling mold(6) in a chamber(1), where the foaming furnace of a cylindrical shape without a bottom and the mold combined closely to the foaming furnace are positioned on a upper and a lower part of the chamber, respectively; closing the foaming furnace with a first cover(12); adding a foaming agent, 1.0-5wt.% of TiH2, with stirring and heating; descending the lower mold when foaming is stared, which leads to release the combine between foaming furnace and mold, resulting in flowing the foamed Al-melt into the mold; closing the mold with a second cover; and cooling.
    • 目的:提供一种泡沫铝的制备方法,其特征在于,与需要分开的发泡和冷却炉的常规直接浇注方法不同,加热的Al熔体在装有发泡炉和模具的室中发泡和冷却。 因此,该方法以低成本和高产率制备高品质发泡氧化铝。 构成:该制备方法包括以下步骤:在增稠炉中加入Al-熔体(700-750℃)稳定的Ca合金,Ca-10-30重量%的Al合金,使Al熔体变厚; 将增稠的Al熔体倾倒到由发泡炉(C)的侧壁(3)和室(1)中的冷却模具(6)的底部形成的发泡空间中,其中圆柱形的发泡炉 没有底部,并且与发泡炉紧密结合的模具分别位于腔室的上部和下部; 用第一盖(12)关闭发泡炉; 在搅拌和加热下加入1.0-5重量%的TiH2的发泡剂; 发泡时下降模具,导致发泡炉和模具之间的组合释放,导致发泡的Al熔体流入模具; 用第二个盖子关闭模具; 和冷却。
    • 5. 发明公开
    • 플라즈마를 이용한 질화알루미늄 형성 방법 및 그 장치
    • 通过使用PLAZMA及其器件制备氮化铝的方法
    • KR1020010028157A
    • 2001-04-06
    • KR1019990040245
    • 1999-09-18
    • 고등기술연구원연구조합
    • 김윤기심연근
    • C01F7/66
    • C01B21/0724C01F7/00
    • PURPOSE: A method for preparing aluminum nitride by using plazma and a device therefor are provided which are able to form an aluminum nitride layer having more than several microns on the surface of the aluminum or an alloyed aluminum regardless of the presence of an aluminum oxide layer or non-nitrified aluminum materials. CONSTITUTION: The method comprises steps of: (i) after placing a sample to be nitrified in a chamber and making the chamber vacuum, pouring nitrogen gas into the chamber; (ii) applying voltage to the sample to form nitrogen plazma therearound and pouring the nitrogen ion into the inside of the sample to form aluminum nitride layer; (iii) after cutting off the voltage of the step (ii) and exhausting gas inside the chamber to make the chamber vacuum, pouring an inert gas into the chamber and heating the chamber to increase the temperature of the sample; (iv) applying voltage to the sample to form inert gas plazma around the sample and removing an aluminum oxide layer and non-nitrified aluminum material layer from the surface of the sample by sputtering action of the inert gas ion to expose the aluminum nitride layer; (v) after cutting off the voltage of the step (iv) and exhausting gas of the chamber to make the chamber vacuum, pouring nitrogen gas into the chamber and heating the chamber to increase the temperature of the sample to a plazma nitrification temperature; (vi) applying voltage to the sample to form nitrogen plazma around the sample and growing the aluminum nitride layer of the sample by diffusion of nitrogen atom by the nitrogen plazma; (vii) after growing the aluminum nitride layer of the sample to have a fixed thickness and cutting off the voltage applied to the sample, making the inside of the chamber vacuum; and (viii) pouring nitrogen gas into the inside of the chamber to cool the sample. The device for forming an aluminum nitride comprises: (i) a chamber(10); (ii) a negative plate(12); (iii) a negative plate supporting pole(14); (iv) a vacuum pump(20); (v) a pipe(22); (vi) a manometer(24); (vii) a pressure control valve(26); (viii) a hot wire(30); (ix) a gas supplying device(40); (x) a gas injecting tube(42); (xi) a cathode electrode(50); (xii) a high-voltage pulse direct current power source supplying device(52); (xiii) a low-voltage pulse direct current power source supplying device(54); (xiv) a cathode power source changing switch(56); (xv) a direct-contact type thermometer(62); (xvi) a temperature measuring device(62); (xvii) an rf power source supplying part(70); (xviii) an rf power source control part(72); (xix) an rf antenna(74); and (xx) an rf electrode(76).
    • 目的:提供一种通过使用plazma制备氮化铝的方法及其装置,其能够在铝或合金化铝的表面上形成具有多于几微米的氮化铝层,而不管是否存在氧化铝层 或非硝化铝材料。 方法:该方法包括以下步骤:(i)将待硝化的样品置于室中并使室真空后,将氮气倒入室内; (ii)向样品施加电压以在其周围形成氮斑,并将氮离子注入样品内部以形成氮化铝层; (iii)在切断步骤(ii)的电压并排出腔室内的气体以使腔室真空之后,将惰性气体倒入室中并加热室以增加样品的温度; (iv)向样品施加电压以在样品周围形成惰性气体斑块,并通过惰性气体离子的溅射作用从样品的表面除去氧化铝层和非硝化铝材料层以暴露氮化铝层; (v)在切断步骤(iv)的电压并排出腔室的气体以使腔室真空之后,将氮气倒入室中并加热室以将样品的温度升高到普拉兹硝化温度; (vi)向样品施加电压以在样品周围形成氮斑,并通过氮斑扩散氮原子使样品的氮化铝层生长; (vii)在将样品的氮化铝层生长成具有固定厚度并切断施加到样品上的电压之后,使室内真空; 和(viii)将氮气倒入室内以冷却样品。 用于形成氮化铝的装置包括:(i)室(10); (ii)负极板(12); (iii)负极板支撑杆(14); (iv)真空泵(20); (v)管道(22); (vi)压力计(24); (vii)压力控制阀(26); (viii)热丝(30); (ix)气体供给装置(40); (x)气体注入管(42); (xi)阴极电极(50); (xii)高压脉冲直流电源供给装置(52); (xiii)低压脉冲直流电源供给装置(54); (xiv)阴极电源切换开关(56); (xv)直接接触式温度计(62); (xvi)温度测量装置(62); (xvii)射频电源供给部(70); (xviii)射频电源控制部分(72); (xix)一个射频天线(74); 和(xx)射频电极(76)。