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    • 4. 发明公开
    • 플라즈마 발생 장치 및 기판 처리 장치
    • 等离子体发生装置和基板加工装置
    • KR1020130085590A
    • 2013-07-30
    • KR1020120006458
    • 2012-01-20
    • 한국과학기술원
    • 장홍영서상훈박기정
    • H05H1/46H01L21/3065
    • H01J37/32541H01J37/32082H01J37/32091H01J37/32165H05H1/46H05H2001/4675H05H2001/4682
    • PURPOSE: A plasma generator and a substrate processing apparatus are provided to process a large sized semiconductor substrate uniformly using plasma. CONSTITUTION: A plasma generator comprises a first electrode (112), a second electrode (114), an insulation spacer (116), a first RF power source (122), and a second RF power source (132). The first electrode has a disc shape and receives a first RF power of a first frequency for forming plasma. The second electrode is arranged around the first electrode, has a washer shape, and is supplied with a second RF power of a second frequency. The insulation spacer is disposed between the first electrode and the second electrode. The first RF power source supplies power to the first electrode. The second RF power source supplies power to the second electrode.
    • 目的:提供等离子体发生器和基板处理装置,以使用等离子体均匀地处理大尺寸半导体基板。 构成:等离子体发生器包括第一电极(112),第二电极(114),绝缘间隔物(116),第一RF电源(122)和第二RF电源(132)。 第一电极具有盘形并且接收用于形成等离子体的第一频率的第一RF功率。 第二电极围绕第一电极布置,具有垫圈形状,并且被提供有第二频率的第二RF电力。 绝缘间隔件设置在第一电极和第二电极之间。 第一RF电源向第一电极供电。 第二RF电源向第二电极供电。
    • 5. 发明公开
    • 축전 결합 플라즈마용 전극 구조체 및 기판 처리 장치
    • 电容耦合等离子体电极结构及基板加工设备
    • KR1020130051784A
    • 2013-05-21
    • KR1020110117128
    • 2011-11-10
    • 한국과학기술원
    • 장홍영서상훈박기정이윤성
    • H05H1/34H05H1/24
    • H01J37/32183H01J37/32091H01J37/32458H01J37/32541H01J37/32715H01J37/32825H05H1/46H05H2001/4675H05H2001/4682
    • PURPOSE: An electrode structure for capacitive-coupled plasma and a substrate processing apparatus including the same are provided to improve regularity of capacitive-coupled plasma of a rectangular electrode. CONSTITUTION: A substrate processing apparatus includes a vacuum tank(120), a substrate holder(202), and a rectangular electrode(210). The vacuum tank includes an exhausting unit in a rectangular container shape. The substrate holder is arranged inside of the vacuum tank. The rectangular electrode includes at least four trenches(211), is supplied with electricity from a RF power source(206) through an impedance matching network(208), and forms capacitive-coupled plasma inside of the vacuum tank. The trenches have a fixed inner radius or outer radius and are separated from each other in the diagonal direction of the rectangular electrode.
    • 目的:提供一种用于电容耦合等离子体的电极结构和包括其的基板处理装置,以改善矩形电极的电容耦合等离子体的规格性。 构成:基板处理装置包括真空槽(120),基板保持架(202)和矩形电极(210)。 真空槽包括矩形容器形状的排气单元。 衬底保持器布置在真空罐的内部。 矩形电极包括至少四个沟槽(211),其通过阻抗匹配网络(208)从RF电源(206)供电,并在真空容器内形成电容耦合等离子体。 沟槽具有固定的内半径或外半径,并且在矩形电极的对角线方向上彼此分离。
    • 7. 发明公开
    • 플라즈마 발생 장치 및 기판 처리 장치
    • 等离子体发生装置和基板加工装置
    • KR1020130101492A
    • 2013-09-13
    • KR1020130101827
    • 2013-08-27
    • 한국과학기술원
    • 장홍영서상훈박기정
    • H05H1/46
    • H01J37/32541H01J37/32009H01J37/32559H01J37/32669H01J37/32715H05H1/24
    • PURPOSE: A plasma generating apparatus and a substrate processing apparatus are provided to uniformly process a large area semiconductor substrate using plasma. CONSTITUTION: A plasma generating apparatus (100) comprises a circular plate type first electrode (112), a washer type second electrode (114), an insulation spacer (116), a first radio frequency (RF) power (122), and a second RF power (132). The first electrode receives the first RF power of a first frequency to form plasma. The second electrode is arranged around the first electrode and receives the second RF power of a second frequency. The insulation spacer is arranged between the first and second electrodes. The first RF power supplies power to the first electrode. The second RF power supplies power to the second electrode.
    • 目的:提供等离子体发生装置和基板处理装置,以均匀地处理使用等离子体的大面积半导体基板。 等离子体发生装置(100)包括圆板型第一电极(112),垫圈型第二电极(114),绝缘间隔物(116),第一射频(RF)电力(122)和 第二RF功率(132)。 第一电极接收第一频率的第一RF功率以形成等离子体。 第二电极布置在第一电极周围并且接收第二频率的第二RF功率。 绝缘间隔件布置在第一和第二电极之间。 第一RF电源向第一电极供电。 第二RF电源向第二电极供电。