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1. 发明公开

KR1020130075921A 질화갈륨 기판 제조방법 无效
标题翻译：氮化硅衬底的制备方法
公开(公告)号：KR1020130075921A
公开(公告)日：2013-07-08
申请号：KR1020110144242
申请日：2011-12-28
申请人： 코닝정밀소재 주식회사
发明人： 배준영 , 박현종 , 이원조 , 임성근 , 정병규 , 최준성 , 김준회 , 박보익 , 박철민 , 신성환
IPC分类号： H01L21/20
摘要： PURPOSE: A method for manufacturing a gallium nitride substrate is provided to reduce the generation of crack by depositing a material having a large lattice parameter on a gallium nitride layer. CONSTITUTION: A gallium nitride layer (200) is grown on a base substrate (100). A compressive stress applying layer (300) is deposited in the Ga plane of the gallium nitride layer. The base substrate is separated from the gallium nitride layer. The compressive stress applying layer is removed from the Ga plane to form a free-standing GaN wafer.
摘要翻译：目的：提供一种用于制造氮化镓衬底的方法，以通过在氮化镓层上沉积具有大晶格参数的材料来减少裂纹的产生。构成：在基底（100）上生长氮化镓层（200）。压应力施加层（300）沉积在氮化镓层的Ga平面中。基底衬底与氮化镓层分离。从Ga平面去除压应力施加层以形成独立的GaN晶片。

2. 发明公开

KR1020130040498A 질화갈륨 막 제조방법 无效
标题翻译：制造方法薄膜
公开(公告)号：KR1020130040498A
公开(公告)日：2013-04-24
申请号：KR1020110105312
申请日：2011-10-14
申请人： 코닝정밀소재 주식회사
发明人： 임성근 , 김준회 , 박보익 , 박철민 , 박현종 , 배준영 , 신성환 , 이원조 , 최준성 , 정병규
IPC分类号： B82B3/00 , B82B1/00 , B82Y40/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02603 , H01L21/02639 , H01L21/0265
摘要： PURPOSE: A manufacturing method of a gallium nitride film is provided to prevent crack generation and defects on gallium nitride film by strain by growing a gallium nitride film on a nanorod. CONSTITUTION: A manufacturing method of a gallium nitride film comprises a step of growing a gallium nitride nanorod with grooves on a substrate; and a step of growing a gallium nitride film on the gallium nitride nanorod. A manufacturing method of the gallium nitride film additionally comprises a step of cooling the substrate to automatically separate the nanorod from the groove, after growing the gallium nitride film. The length and the diameter are 10-1000nm. The growing step of the gallium nitride nanorod is conducted at 500-700>=. The gallium nitride growth step is conducted at 900>= or more. [Reference numerals] (S110) Growing a gallium nitride nanorod with grooves; (S120) Growing a gallium nitride film;
摘要翻译：目的：提供一种氮化镓膜的制造方法，以通过在纳米棒上生长氮化镓膜来防止由于应变引起的裂纹产生和氮化镓膜的缺陷。构成：氮化镓膜的制造方法包括在衬底上生长具有沟槽的氮化镓纳米棒的步骤; 以及在氮化镓纳米棒上生长氮化镓膜的步骤。氮化镓膜的制造方法还包括在生长氮化镓膜之后冷却衬底以自动将纳米棒与沟槽分离的步骤。长度和直径为10-1000nm。氮化镓纳米棒的生长步骤在500-700℃下进行。氮化镓生长步骤在900℃以上进行。（参考号）（S110）生长具有槽的氮化镓纳米棒; （S120）生长氮化镓膜;

3. 发明公开

KR1020140083440A 질화갈륨 기판 제조용 성장로 无效
标题翻译：用于制造氮化铝基板的炉
公开(公告)号：KR1020140083440A
公开(公告)日：2014-07-04
申请号：KR1020120153182
申请日：2012-12-26
申请人： 코닝정밀소재 주식회사
发明人： 배준영 , 임성근 , 최준성 , 김우리한 , 김준회 , 박보익 , 박철민 , 이동용 , 이원조
IPC分类号： C30B23/06 , H01L21/205 , C30B29/38 , C23C16/34
摘要： The present invention relates to a growth furnace for manufacturing a gallium nitride substrate and, more specifically, to a growth furnace for manufacturing a gallium nitride substrate for growing a gallium nitride thin film on a substrate using an HVPE growth method. For the same, the present invention includes: a reaction tube having a reaction space for enabling the growth of the gallium nitride thin film on a substrate arranged on the inside; and a gas supplier installed on one side of the reaction tube to inject reactant gases into the reaction tube. The reaction tube is made of pyrolytic graphite.
摘要翻译：本发明涉及一种用于制造氮化镓衬底的生长炉，更具体地说，涉及一种使用HVPE生长法在衬底上生长氮化镓薄膜的氮化镓衬底的生长炉。因此，本发明包括：具有反应空间的反应管，该反应空间能够在布置在内部的基板上生长氮化镓薄膜; 以及安装在反应管一侧的气体供应器，以将反应气体注入反应管中。反应管由热解石墨制成。

4. 发明公开

KR1020130065988A 질화갈륨 기판 및 그 제조방법 无效
标题翻译：氮化铝基板及其制造方法
公开(公告)号：KR1020130065988A
公开(公告)日：2013-06-20
申请号：KR1020110132629
申请日：2011-12-12
申请人： 코닝정밀소재 주식회사
发明人： 신성환 , 김준회 , 박보익 , 박철민 , 박현종 , 배준영 , 이원조 , 임성근 , 정병규 , 최준성
IPC分类号： H01L21/20 , H01L21/22
CPC分类号： H01L21/02389 , H01L21/02403 , H01L21/02505 , H01L21/02576
摘要： PURPOSE: A GaN wafer and a manufacturing method thereof are provided to convert the dopping concentration of the silicone, thereby improving the yield. The yield can be improved since gaN wafer and a manufacturing method thereof diversify the. CONSTITUTION: A GaN wafer(100) is grown up on a base substrate(10). A n-type dopant is doped on the GaN wafer. A first layer(101) contacts with the base substrate. A second layer(102) is located on the first layer. A third layer(103) is located on the second layer. A fourth layer(104) is located on the third layer. The thickness increases from the first layer to the fourth layer. The first layer has the highest doping concentration. The fourth layer has the highest doping concentration.
摘要翻译：目的：提供GaN晶片及其制造方法以转化硅酮的掺杂浓度，从而提高产率。由于gaN晶片及其制造方法多样化，可以提高产量。构成：在基底（10）上生长GaN晶片（100）。在GaN晶片上掺杂n型掺杂剂。第一层（101）与基底基板接触。第二层（102）位于第一层上。第三层（103）位于第二层上。第四层（104）位于第三层上。厚度从第一层增加到第四层。第一层具有最高的掺杂浓度。第四层掺杂浓度最高。

5. 发明公开

KR1020140074467A 기상 성장용 서셉터 无效
标题翻译：不锈钢蒸汽相外观
公开(公告)号：KR1020140074467A
公开(公告)日：2014-06-18
申请号：KR1020120142444
申请日：2012-12-10
申请人： 코닝정밀소재 주식회사
发明人： 김준회 , 박철민 , 김우리한 , 박보익 , 배준영 , 이동용 , 이원조 , 임성근 , 최준성
IPC分类号： C23C16/458 , H01L21/683 , H01L21/205
摘要： The present invention relates to a susceptor for vapor phase growth and, more particularly, to a susceptor for vapor phase growth which can minimize a phenomenon where the bottom of a base substrate having single crystal gallium nitride with vapor phase growth on the top thereof is exposed to growth gas, and which can minimize a contact area and stably fixate the base substrate. The provided susceptor for vapor phase growth comprises a base plate; and a pocket unit which is formed on the top of the base plate and where a base substrate to be evaporated with an evaporating film is seated. The pocket unit is separated from the bottom of the base substrate and is in line contact with an edge unit of the base substrate.
摘要翻译：本发明涉及一种用于气相生长的感受体，更具体地说，涉及用于气相生长的感受体，其可以最小化其顶部具有气相生长的具有单晶氮化镓的基底衬底的底部暴露的现象生长气体，并且可以最小化接触面积并稳定地固定基底。所提供的气相生长基座包括基板; 以及形成在基板的顶部并且用蒸发膜蒸发的基底的座袋单元。袋单元与基底基板的底部分离，并与基底基板的边缘单元线接触。

6. 发明授权

KR101186232B1 프리-스탠딩 질화갈륨 기판 제조방법 失效
标题翻译：制备无定型氮化铝基板的方法
公开(公告)号：KR101186232B1
公开(公告)日：2012-09-27
申请号：KR1020110074053
申请日：2011-07-26
申请人： 코닝정밀소재 주식회사
发明人： 박봉모 , 우광제 , 최준성 , 김준회 , 박철민
IPC分类号： H01L21/20
CPC分类号： C04B35/58 , C04B41/009 , C04B41/5062 , C04B41/87 , C04B2111/0025 , C04B2111/00844 , C04B2235/3852 , C30B25/02 , C30B25/20 , C30B29/406 , H01L33/0075 , C04B41/4531
摘要： PURPOSE: A method for manufacturing a free-standing gallium nitride substrate is provided to prevent a substrate from being bent and crack generation by manufacturing the free-standing gallium nitride substrate using polycrystalline gallium nitride substrate having similar thermal expansion coefficients. CONSTITUTION: Polycrystalline gallium nitride powder deposited on a reactor or a susceptor is collected. The collected polycrystalline gallium nitride powder is put in a molding frame. A polycrystalline gallium nitride substrate is manufactured by sintering the polycrystalline gallium nitride powder. A single crystal gallium nitride layer letting single crystal gallium nitride grow is formed on the polycrystalline gallium nitride substrate. [Reference numerals] (AA) Power collection step; (BB) Mounting step; (CC) Polycrystalline gallium nitride substrate manufacturing step; (DD) Single crystal gallium nitride layer forming step
摘要翻译：目的：提供一种用于制造独立式氮化镓衬底的方法，以通过使用具有相似热膨胀系数的多晶氮化镓衬底制造独立的氮化镓衬底来防止衬底弯曲和产生裂纹。构成：沉积在反应器或基座上的多晶氮化镓粉末被收集。将收集的多晶氮化镓粉末放入模制框架中。通过烧结多晶氮化镓粉末来制造多晶氮化镓衬底。在多晶氮化镓衬底上形成使单晶氮化镓生长的单晶氮化镓层。（附图标记）（AA）电力收集步骤; （BB）安装步骤; （CC）多晶氮化镓衬底制造步骤; （DD）单晶氮化镓层形成步骤

7. 发明公开

KR1020140098403A 질화갈륨 기판 제조용 성장로 无效
标题翻译：用于制造氮化铝基板的炉
公开(公告)号：KR1020140098403A
公开(公告)日：2014-08-08
申请号：KR1020130010974
申请日：2013-01-31
申请人： 코닝정밀소재 주식회사
发明人： 최준성 , 김준회 , 이원조 , 김우리한 , 박보익 , 박철민 , 배준영 , 이동용 , 임성근
IPC分类号： H01L21/20
摘要： The present invention relates to a furnace for manufacturing a gallium nitride substrate and, more specifically, to a furnace for manufacturing a gallium nitride substrate capable of easily changing the temperature profile of a localized zone. The present invention provides a furnace for manufacturing a gallium nitride substrate which comprises: a furnace main body in which an inlet and an outlet are formed on one side and the other side respectively; a reaction tube disposed in the furnace main body in which both sides of the longitudinal direction are connected with the inlet and the outlet respectively; and a heater surrounding the outer circumference of the reaction tube, wherein the reaction tube is divided into zones along the longitudinal direction to control each zone and a perforated portion consisting of holes is formed in a certain location of the zones.
摘要翻译：本发明涉及一种用于制造氮化镓衬底的炉子，更具体地说，涉及一种能够容易地改变局部区域温度分布的氮化镓衬底的制造炉。本发明提供了一种用于制造氮化镓衬底的炉，其包括：分别在一侧和另一侧形成入口和出口的炉主体; 设置在炉主体中的反应管，其中纵向两侧分别与入口和出口连接; 以及围绕反应管的外周的加热器，其中反应管沿着纵向被分成区域以控制每个区域，并且在该区域的特定位置形成由孔组成的穿孔部分。

8. 发明公开

KR1020140088653A 질화갈륨 기판 제조용 성장로의 반응관 无效
标题翻译：用于制备氮化铝基板的反应管
公开(公告)号：KR1020140088653A
公开(公告)日：2014-07-11
申请号：KR1020130000421
申请日：2013-01-03
申请人： 코닝정밀소재 주식회사
发明人： 박철민 , 김준회 , 김우리한 , 박보익 , 배준영 , 이동용 , 이원조 , 임성근 , 최준성
IPC分类号： C30B23/06 , H01L21/205 , C30B29/38 , C23C16/34
摘要： The present invention relates to a reaction tube of a growth furnace for fabricating a gallium nitride substrate and, more particularly, to a reaction tube of a growth furnace for fabricating a gallium nitride substrate that is capable of improving the quality and productivity of the fabricated gallium nitride substrate by preventing collision of gallium nitride source gas injected at a high flow rate and cracking attributable to temperature difference between the source gas and the reaction tube. The present invention includes a mixing space portion where first source gas and second source gas, which are deposited on a gallium nitride membrane, are mixed with each other; a reaction space portion that is formed to be connected to and communicate with a back end of the mixing space portion, is relatively smaller in inner diameter than the mixing space portion, and is formed to allow reception of a susceptor in which one or more growth support substrates are mounted, growth of the gallium nitride membrane on the growth support substrate, and flow of the first source gas and the second source gas; and an exhaust space portion that is formed to be connected to and communicate with a back end of the reaction space portion. A wall surface site of the mixing space portion, with which the first source gas injected to the mixing space portion at a flow rate higher than the flow rate of the second source gas collides, is formed of opaque quartz.
摘要翻译：本发明涉及一种用于制造氮化镓衬底的生长炉的反应管，更具体地，涉及一种用于制造氮化镓衬底的生长炉的反应管，该反应管能够提高制造的镓的质量和生产率通过防止以高流量注入的氮化镓源气体的碰撞和由于源气体和反应管之间的温度差引起的裂纹的氮化物衬底。本发明包括混合空间部分，其中沉积在氮化镓膜上的第一源气体和第二源气体彼此混合; 形成为连接到混合空间部分的后端并与其连通的反应空间部分的内径比混合空间部分的内径相对较小，并且形成为允许容纳一个或多个生长安装支撑基板，氮化镓膜在生长支撑基板上的生长以及第一源气体和第二源气体的流动; 以及形成为与反应空间部的后端连接并与其连通的排气空间部。混合空间部分的壁表面部位由不透明的石英形成，第一源气体以比第二源气体的流量高的流速冲入混合空间部分。

9. 发明授权

KR101279398B1 질화갈륨 막 제조방법 및 질화갈륨 막 제조기판 失效
标题翻译：用于制造GaN薄膜的方法和用于制造GaN薄膜的基板
公开(公告)号：KR101279398B1
公开(公告)日：2013-07-04
申请号：KR1020110105311
申请日：2011-10-14
申请人： 코닝정밀소재 주식회사
发明人： 배준영 , 박현종 , 최준성 , 김준회 , 박보익 , 박철민 , 신성환 , 이원조 , 임성근
IPC分类号： C01B21/06 , C23C16/34
摘要： 본 발명은 질화갈륨 막 제조방법 및 질화갈륨 막 제조기판에 관한 것으로서, 더욱 상세하게는 크랙의 발생을 억제하는 질화갈륨 막 제조방법 및 질화갈륨 막 제조기판에 관한 것이다.
이를 위해, 본 발명은 기판 내부에 기판의 표면으로부터 일정 두께로 질화갈륨(GaN) 원자와 기판 원자가 혼재하는 혼재층을 형성하는 혼재층 형성 단계; 및 상기 기판 상에 질화갈륨을 성장시키는 질화갈륨 성장 단계; 를 포함하는 것을 특징으로 하는 질화갈륨 막 제조방법을 제공한다.

10. 发明公开

KR1020140053566A 질화갈륨 기판 제조용 성장로 无效
标题翻译：用于制造氮化铝基板的炉
公开(公告)号：KR1020140053566A
公开(公告)日：2014-05-08
申请号：KR1020120119653
申请日：2012-10-26
申请人： 코닝정밀소재 주식회사
发明人： 이동용 , 최준성 , 김우리한 , 김준회 , 박보익 , 박철민 , 배준영 , 이원조 , 임성근
IPC分类号： C30B23/06 , H01L21/205 , C30B29/38 , C23C16/34
摘要： The present invention relates to a growth furnace for fabricating a gallium nitride substrate and, more particularly, to a growth furnace for fabricating a gallium nitride substrate with which a high-quality gallium nitride substrate can be fabricated by guiding a uniform mixture between gallium nitride source gases. The present invention includes a growth furnace main body where a gas inlet and a gas outlet are respectively formed on one side and the other side, and a reaction space is formed therein to allow receiving of a growth support substrate and growth of a gallium nitride film on the growth support substrate; and a heater that is disposed in the growth furnace main body and heats the gallium nitride source gas which flows into the growth furnace main body through the gas inlet to perform vapor phase growth into the gallium nitride membrane on the growth support substrate. A part of a wall surface of the growth furnace main body that is on the same plane as an upper end surface of the growth support substrate has relatively the largest diameter.
摘要翻译：本发明涉及一种用于制造氮化镓衬底的生长炉，更具体地，涉及用于制造氮化镓衬底的生长炉，通过该氮化镓衬底可以通过在氮化镓源之间引导均匀的混合物来制造高质量的氮化镓衬底气体。本发明包括在一侧和另一侧分别形成气体入口和气体出口的生长炉主体，并且在其中形成反应空间以允许接收生长支撑衬底和生长氮化镓膜在生长支持基底上; 以及加热器，其设置在生长炉主体中，并且通过气体入口加热流入生长炉主体的氮化镓源气体，以在生长支撑基板上进行氮化镓膜的气相生长。与生长支撑基板的上端面在同一平面上的生长炉主体的壁面的一部分具有相对最大的直径。

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