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    • 1. 发明公开
    • 퓸드 실리카 입자로 표면 처리된 격벽 분말을 포함하는감광성 격벽 페이스트 조성물 및 그의 제조방법, 그리고그를 사용한 플라즈마 디스플레이 패널의 격벽 형성방법
    • 含有二氧化硅微粒表面处理的BARRIER RIB粉末的感光性阻燃剂RIB糊剂组合物及其制备方法以及使用制备的浆料形成等离子体显示面板(PDP)的BARRIER RIB的方法
    • KR1020040012298A
    • 2004-02-11
    • KR1020020045812
    • 2002-08-02
    • 이비텍(주)(주)이그잭스경북대학교 산학협력단
    • 박이순윤상원백신혜최형석임무식박선우김봉출신경석이효식
    • C03C17/04B82Y40/00
    • C03C8/24G03F7/0007G03F7/0047
    • PURPOSE: A photosensitive barrier rib paste composition containing barrier rib powder surface treated with fumed silica particles is provided, which increases exposure efficiency without raising the sintering temperature of paste in forming of barrier rib pattern for plasma display panel by a photolithographic process. CONSTITUTION: The photosensitive barrier rib paste comprises 8-20wt.% of one or more of multifunctional monomers and multifunctional polymers, 5-20wt.% of binder polymer based on cellulose and acrylate, 10-23wt.% of solvent, 1-2wt.% of photoinitiator, 60-80wt.% of inorganic barrier rip powder surface treated with fumed silica, and optionally 0.5-5wt.% of additives such as photo intensifier, dispersant, silicon-based defoamer, etc. The paste is prepared by the following steps of: (i) preparing inorganic barrier rip powder(2-5micrometer) surface treated with fumed silica particles(5-500nm) by ball milling 40-60wt.% of glass frit, 10-25wt.% of ceramic powder(Al2O3, CaO, Cr2O3, etc.), 0.1-1wt.% of fumed silica particles and optionally 0.05-0.1wt.% of black pigment for 10-60min, baking mixed powder at 100-150deg.C for 10-30min, and ball milling again; (ii) preparing a photosensitive vehicle containing at least one compound selected from multifunctional monomers and multifunctional polymers, photoinitiator, additive, polymer binder and solvent; (iii) mixing prepared powder and photosensitive vehicle and dispersing. The barrier rib pattern for plasma display panel is formed by the following steps of: (i) coating the paste on the substrate coated with dielectrics in a thickness of 150-250micrometer; (ii) drying at 50-130deg.C for 5-30min.; (iii) exposing the paste to ultraviolet ray using a photomask; (iv) forming barrier rib pattern; (v) sintering at 450-600deg.C for 20-30min.
    • 目的:提供一种含有用煅制二氧化硅颗粒处理的阻挡肋粉末表面的光敏隔壁糊料组合物,其通过光刻工艺在等离子体显示面板形成障壁图案中提高了糊料的烧结温度,从而提高了曝光效率。 构成:感光隔肋糊包含8-20重量%的一种或多种多官能单体和多官能聚合物,5-20重量%的基于纤维素和丙烯酸酯的粘合剂聚合物,10-23重量%溶剂,1-2重量% %的光引发剂,60-80重量%的用热解法二氧化硅处理的无机阻挡裂纹粉末表面,以及任选的0.5-5重量%的添加剂,如光增强剂,分散剂,硅基消泡剂等。该糊剂通过以下制备 步骤:(i)通过球磨40-40重量%的玻璃料,10-25重量%的陶瓷粉末(Al 2 O 3,Al 2 O 3等)制备表面用热解法二氧化硅颗粒(5-500nm)处理的无机屏障裂纹粉末(2-5微米) CaO,Cr2O3等),0.1-1重量%的热解法二氧化硅颗粒和任选的0.05-0.1重量%的黑色颜料10-60分钟,在100-150℃下烘烤混合粉末10-30分钟, 再次; (ii)制备含有至少一种选自多官能单体和多官能聚合物,光引发剂,添加剂,聚合物粘合剂和溶剂的化合物的光敏载体; (iii)混合制备的粉末和感光性载体并分散。 用于等离子体显示面板的隔壁图案通过以下步骤形成:(i)在150-250微米的厚度的涂覆有电介质的基底上涂覆糊状物; (ii)在50-130℃干燥5-30分钟。 (iii)使用光掩模使糊状物暴露于紫外线; (iv)形成障壁图案; (v)在450-600℃烧结20-30分钟。
    • 3. 发明公开
    • 캡핑층을 형성한 반도체 디바이스 및 그 제조방법
    • 用于沉积盖层的半导体器件及其制造方法
    • KR1020080079953A
    • 2008-09-02
    • KR1020070020627
    • 2007-02-28
    • 경북대학교 산학협력단
    • 이정희함성호공성호나경일양충모윤상원조현익
    • H01L21/20
    • A semiconductor device for depositing a capping layer and a manufacturing method thereof are provided to perform a deposition process at a low temperature by depositing sequentially a Ni layer and the capping layer and performing a heat treatment process. A gate pattern and a source/drain region are formed on an upper surface of a silicon substrate(S210). A nickel layer is deposited on the upper surface of the silicon substrate including the gate pattern and the source/drain region by performing an ALD(Atomic Layer Deposition) method(S220). A capping layer is formed on an upper surface of the nickel layer(S230). A nickel silicide layer is formed on upper surfaces of the gate pattern and the source/drain region by treating thermally the silicon substrate including the capping layer(S240).
    • 提供一种用于沉积覆盖层的半导体器件及其制造方法,用于通过依次沉积Ni层和封盖层并执行热处理工艺在低温下进行沉积工艺。 栅极图案和源极/漏极区域形成在硅衬底的上表面上(S210)。 通过执行ALD(原子层沉积)方法(S220),在包括栅极图案和源极/漏极区域的硅衬底的上表面上沉积镍层。 在镍层的上表面上形成覆盖层(S230)。 通过对包括封盖层的硅衬底进行热处理,在栅极图案和源极/漏极区域的上表面上形成硅化镍层(S240)。