专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR1020090007516A 자연산화막 상에 형성된 반도체 디바이스 및 그 제조방법 无效
标题翻译：在自然氧化物上沉积的半导体器件及其制造方法
公开(公告)号：KR1020090007516A
公开(公告)日：2009-01-19
申请号：KR1020070070912
申请日：2007-07-14
申请人： 경북대학교 산학협력단
发明人： 이정희 , 함성호 , 공성호 , 조현익 , 양충모 , 배남진
IPC分类号： H01L21/24 , H01L21/336 , H01L21/203
摘要： A semiconductor device formed on a native oxide film and a manufacturing method thereof are provided to form nickel silicide by using a capping layer through atomic layer deposition(ALD), thereby improving low-resistance property. A gate pattern and source/drain regions are formed on a silicon substrate(S210). An Ni thin film is deposited onto a native oxide film on the gate pattern and source/drain region(S220). In the nickel thin film, silicidation and thermal process are performed(S230). A nickel silicide film(NiSi) is formed as a capping layer on the gate pattern and source/drain region through the thermal process(S240). The Ni thin film is formed through an ALD process by using a Ni precursor. A capping layer can be more formed on the nickel silicide film. The formation of the capping layer is made through an in-situ process. The capping layer is formed by using one of Ta, TaN, W, Ti, and TiN.
摘要翻译：通过使用通过原子层沉积（ALD）的覆盖层，提供在自然氧化物膜上形成的半导体器件及其制造方法来形成硅化镍，从而提高低电阻特性。在硅衬底上形成栅极图案和源极/漏极区域（S210）。将Ni薄膜沉积在栅极图案和源极/漏极区域上的自然氧化膜上（S220）。在镍薄膜中，进行硅化和热处理（S230）。通过热处理，在栅极图案和源极/漏极区域上形成硅化镍膜（NiSi）作为覆盖层（S240）。通过使用Ni前体的ALD工艺形成Ni薄膜。可以在硅化镍膜上更多地形成覆盖层。盖层的形成通过原位工艺制成。通过使用Ta，TaN，W，Ti和TiN中的一种形成覆盖层。

2. 发明公开

KR1020080079953A 캡핑층을 형성한 반도체 디바이스 및 그 제조방법 无效
标题翻译：用于沉积盖层的半导体器件及其制造方法
公开(公告)号：KR1020080079953A
公开(公告)日：2008-09-02
申请号：KR1020070020627
申请日：2007-02-28
申请人： 경북대학교 산학협력단
发明人： 이정희 , 함성호 , 공성호 , 나경일 , 양충모 , 윤상원 , 조현익
IPC分类号： H01L21/20
摘要： A semiconductor device for depositing a capping layer and a manufacturing method thereof are provided to perform a deposition process at a low temperature by depositing sequentially a Ni layer and the capping layer and performing a heat treatment process. A gate pattern and a source/drain region are formed on an upper surface of a silicon substrate(S210). A nickel layer is deposited on the upper surface of the silicon substrate including the gate pattern and the source/drain region by performing an ALD(Atomic Layer Deposition) method(S220). A capping layer is formed on an upper surface of the nickel layer(S230). A nickel silicide layer is formed on upper surfaces of the gate pattern and the source/drain region by treating thermally the silicon substrate including the capping layer(S240).
摘要翻译：提供一种用于沉积覆盖层的半导体器件及其制造方法，用于通过依次沉积Ni层和封盖层并执行热处理工艺在低温下进行沉积工艺。栅极图案和源极/漏极区域形成在硅衬底的上表面上（S210）。通过执行ALD（原子层沉积）方法（S220），在包括栅极图案和源极/漏极区域的硅衬底的上表面上沉积镍层。在镍层的上表面上形成覆盖层（S230）。通过对包括封盖层的硅衬底进行热处理，在栅极图案和源极/漏极区域的上表面上形成硅化镍层（S240）。

3. 发明授权

KR101375685B1 질화물 반도체 소자 및 그 제조 방법 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：KR101375685B1
公开(公告)日：2014-03-21
申请号：KR1020120117498
申请日：2012-10-22
申请人： 경북대학교 산학협력단
发明人： 이정희 , 강희성 , 김동석 , 임기식 , 김기원 , 양충모 , 원철호
IPC分类号： H01L21/336 , H01L29/737
CPC分类号： H01L29/66462 , H01L29/4236 , H01L29/7783
摘要： The present invention discloses a method for fabricating a nitride semiconductor diode wherein the method comprises forming a gallium nitride active layer on a substrate; depositing an insulation film on the gallium nitride active layer; exposing a part of the gallium nitride active layer by etching a part of the gallium nitride active layer and a predetermined region of the insulation film; laminating oxide films in the form of covering the part of the exposed gallium nitride active layer and the insulation film; forming a gallium oxide film interface layer between the nitride gallium active layer and the oxide layer by performing annealing at the substrate where the oxide films are laminated; and forming a gate region in the form of embedding the predetermined region on the oxide film.
摘要翻译：本发明公开了一种制造氮化物半导体二极管的方法，其中所述方法包括在衬底上形成氮化镓活性层; 在氮化镓活性层上沉积绝缘膜; 通过蚀刻氮化镓活性层的一部分和绝缘膜的预定区域来暴露一部分氮化镓活性层; 覆盖暴露的氮化镓活性层和绝缘膜的部分的形式的层压氧化膜; 通过在层叠有氧化膜的基板上进行退火，在氮化镓镓活性层和氧化物层之间形成氧化镓膜界面层; 以及在氧化物膜上嵌入预定区域的形式形成栅极区域。

4. 发明授权

KR101435479B1 반도체 소자 및 그의 제조방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR101435479B1
公开(公告)日：2014-08-28
申请号：KR1020130075780
申请日：2013-06-28
申请人： 경북대학교 산학협력단
发明人： 이정희 , 김동석 , 강희성 , 김도균 , 양충모
IPC分类号： H01L29/772 , H01L29/78
CPC分类号： H01L29/7311 , H01L29/66931 , H01L29/7802
摘要： Disclosed are a semiconductor device and a method of manufacturing the same. A semiconductor structure includes a source layer; a barrier layer which is arranged on a predetermined first region of the source layer and has a second region having a first height and a third region having a second height which is higher than the first height; a drain layer which is arranged on the third region of the barrier layer; an insulating layer which is arranged on the second region of the barrier layer; a gate electrode in the upper part of the insulating layer; a source electrode which is arranged on the predetermined forth region of the source layer; and a drain electrode which is arranged in the upper part of the drain layer.
摘要翻译：公开了一种半导体器件及其制造方法。半导体结构包括源极层; 阻挡层，其设置在所述源极层的规定的第一区域上，具有第一高度的第二区域和具有高于所述第一高度的第二高度的第三区域; 漏极层，其布置在所述阻挡层的所述第三区域上; 绝缘层，其布置在所述阻挡层的所述第二区域上; 绝缘层上部的栅电极; 源电极，其布置在源极层的预定的第四区域上; 以及设置在漏极层的上部的漏电极。

5. 发明授权

KR101376221B1 질화물 반도체 소자 및 그 소자의 제조 방법 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：KR101376221B1
公开(公告)日：2014-03-21
申请号：KR1020110131260
申请日：2011-12-08
申请人： 경북대학교 산학협력단
发明人： 이정희 , 김동석 , 임기식 , 김기원 , 강희성 , 양충모 , 원철호
IPC分类号： H01L29/78 , H01L21/336
摘要： 본발명은질화물반도체소자및 그소자의제조방법에관한것으로서, 본발명의실시예에따른질화물반도체소자는서로다른전기적특성을갖는적어도둘 이상의질화물계전극접합층과, 두개의상기전극접합층사이에배치되는장벽층을포함하는반도체층; 서로다른전기적특성의상기전극접합층에각각접촉하는제1 전극및 제2 전극; 상기장벽층에접촉하여형성되는절연층; 및상기절연층상에형성된제3 전극을포함하는것을특징으로한다.

6. 发明公开

KR1020130064578A 질화물 반도체 소자 및 그 소자의 제조 방법 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：KR1020130064578A
公开(公告)日：2013-06-18
申请号：KR1020110131260
申请日：2011-12-08
申请人： 경북대학교 산학협력단
发明人： 이정희 , 김동석 , 임기식 , 김기원 , 강희성 , 양충모 , 원철호
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0642 , H01L29/4232 , H01L29/66931 , H01L29/7311
摘要： PURPOSE: A nitride semiconductor and a fabricating method thereof are provided to reduce leakage current by forming a barrier layer between electrode junction layers. CONSTITUTION: A semiconductor layer(500) includes nitride based electrode junction layers and a barrier arranged between the electrode junction layers. The barrier includes a first and a second barrier layer which have different bandgap energy. A first electrode(521) and a second electrode(523) are contacted with the electrode junction layers of different electrical characteristics. An insulating layer(510) is formed on the semiconductor layer. A third electrode(525) is formed on the insulating layer.
摘要翻译：目的：提供氮化物半导体及其制造方法，通过在电极接合层之间形成阻挡层来减少漏电流。构成：半导体层（500）包括氮化物基电极结层和布置在电极结层之间的势垒。阻挡层包括具有不同带隙能量的第一和第二阻挡层。第一电极（521）和第二电极（523）与不同电特性的电极接合层接触。绝缘层（510）形成在半导体层上。第三电极（525）形成在绝缘层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式