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1. 发明授权

KR101886130B1 발광소자, 발광소자 패키지 및 라이트 유닛 有权
公开(公告)号：KR101886130B1
公开(公告)日：2018-09-06
申请号：KR1020110129923
申请日：2011-12-06
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김현주 , 김소정
IPC分类号： H01L33/38 , H01L33/40 , H01L33/62
摘要： 실시예에따른발광소자는, 상부영역의폭, 중간영역의폭, 하부영역의폭이각각다르게제공된제1 도전형반도체층; 상기제1 도전형반도체층아래에배치된활성층; 상기활성층아래에배치된제2 도전형반도체층; 상기제1 도전형반도체층에전기적으로연결된전극; 상기제2 도전형반도체층에전기적으로연결된반사전극; 을포함한다.

2. 发明授权

KR101873589B1 발광소자, 발광소자 패키지 및 라이트 유닛 有权
公开(公告)号：KR101873589B1
公开(公告)日：2018-07-02
申请号：KR1020110108253
申请日：2011-10-21
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김현주 , 김소정
IPC分类号： H01L33/38 , H01L33/40 , H01L27/15 , H01L33/62
摘要： 실시예에따른발광소자는, 제1 도전형의제1 반도체층, 상기제1 도전형의제1 반도체층아래에제1 활성층, 상기제1 활성층아래에제2 도전형의제2 반도체층을포함하는제1 발광구조물; 상기제1 발광구조물아래에상기제2 반도체층과전기적으로연결된제1 반사전극; 제1 도전형의제3 반도체층, 상기제1 도전형의제3 반도체층아래에제2 활성층, 상기제2 활성층아래에제2 도전형의제4 반도체층을포함하는제2 발광구조물; 상기제2 발광구조물아래에상기제4 반도체층과전기적으로연결된제2 반사전극; 상기제1 반사전극과상기제2 반사전극아래에절연층; 상기절연층아래에전도층; 상기제1 반도체층과상기제2 반사전극에전기적으로연결된컨택부; 상기전도층과상기제1 반사전극에전기적으로연결된연결배선; 을포함한다.

3. 发明公开

KR1020140024580A 발광소자, 발광소자 패키지 및 라이트 유닛 审中-实审
标题翻译：发光装置，发光装置包和灯单元
公开(公告)号：KR1020140024580A
公开(公告)日：2014-03-03
申请号：KR1020120090679
申请日：2012-08-20
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 김현주
IPC分类号： H01L33/36 , H01L33/62 , H01L33/44
CPC分类号： H01L33/385 , H01L25/0753 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/62
摘要： A light emitting device according to one embodiment of the present invention includes: a light emitting structure which includes a first conductive semiconductor layer, an active layer arranged under the first conductive semiconductor layer, and a second conductive semiconductor layer arranged under the active layer; a first electrode which is electrically connected to the first conductive semiconductor layer; a second electrode which is electrically connected to the second conductive semiconductor layer; a channel layer which is arranged on the lower circumference of the light emitting structure; a conductive support member which is arranged under the second electrode; a first connection part which is electrically connected to the first electrode and the conductive support member; and a second connection part which is electrically connected to the second electrode.
摘要翻译：根据本发明的一个实施例的发光器件包括：发光结构，其包括第一导电半导体层，布置在第一导电半导体层下方的有源层和布置在有源层下方的第二导电半导体层; 电连接到第一导电半导体层的第一电极; 电连接到第二导电半导体层的第二电极; 布置在发光结构的下圆周上的沟道层; 布置在所述第二电极下方的导电支撑构件; 电连接到第一电极和导电支撑构件的第一连接部分; 以及电连接到第二电极的第二连接部。

4. 发明公开

KR1020130069207A 발광소자, 발광소자 패키지 및 라이트 유닛 审中-实审
标题翻译：发光装置，发光装置包和灯单元
公开(公告)号：KR1020130069207A
公开(公告)日：2013-06-26
申请号：KR1020110136824
申请日：2011-12-16
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 송다정
IPC分类号： H01L33/22 , H01L33/36
CPC分类号： H01L33/22 , F21Y2115/10 , H01L33/14 , H01L33/405 , H01L33/48
摘要： PURPOSE: A light emitting device, a light emitting device package, and a light unit are provided to improve light extraction efficiency by forming a concavo-convex structure using a PEC(Photo Electro Chemical) etching method. CONSTITUTION: A light emitting structure(10) includes a first conductive type semiconductor layer(11), an active layer(12), and a second conductive type semiconductor layer(13). A reflective electrode(17) is electrically connected to the second conductive type semiconductor layer. An electrode(80) is electrically connected to the first conductive type semiconductor layer. A PEC etching control layer(30) is arranged on the first conductive type semiconductor layer. A part of the PEC etching control layer is in contact with the upper surface of the first conductive type semiconductor layer.
摘要翻译：目的：提供一种发光器件，发光器件封装和光单元，以通过使用PEC（Photo Electro Chemical）蚀刻方法形成凹凸结构来提高光提取效率。构成：发光结构（10）包括第一导电类型半导体层（11），有源层（12）和第二导电类型半导体层（13）。反射电极（17）与第二导电型半导体层电连接。电极（80）电连接到第一导电类型半导体层。在第一导电型半导体层上配置有PEC蚀刻控制层（30）。 PEC蚀刻控制层的一部分与第一导电型半导体层的上表面接触。

5. 发明公开

KR1020130044016A 발광소자, 발광소자 패키지 및 라이트 유닛 审中-实审
标题翻译：发光装置，发光装置包和灯单元
公开(公告)号：KR1020130044016A
公开(公告)日：2013-05-02
申请号：KR1020110108253
申请日：2011-10-21
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김현주 , 김소정
IPC分类号： H01L33/36 , H01L33/62
CPC分类号： H01L33/382 , H01L27/156 , H01L33/405 , H01L33/62
摘要： PURPOSE: A light emitting device, a light emitting device package, and a light unit are provided to form a current blocking layer between a light emitting structure and an ohmic contact layer and to prevent a current concentration phenomenon in a part of an active layer. CONSTITUTION: A first light emitting structure(10) includes a first semiconductor layer(11) of a first conductivity type, a first active layer(12), and a second semiconductor layer(13) of a second conductivity type. A first reflection electrode(17) is electrically connected to the second semiconductor layer under the first light emitting structure. A second light emitting structure(20) includes a third semiconductor layer(21) of the first conductivity type, a second active region(22), and a fourth semiconductor layer(23) of the second conductivity type. A second reflection electrode(27) is electrically connected to the fourth semiconductor layer under the second light emitting structure. A first current blocking layer(18) is formed between the first light emitting structure and a first ohmic contact layer(15).
摘要翻译：目的：提供发光器件，发光器件封装和光单元，以在发光结构和欧姆接触层之间形成电流阻挡层，并且防止有源层的一部分中的电流集中现象。构成：第一发光结构（10）包括第一导电类型的第一半导体层（11），第一有源层（12）和第二导电类型的第二半导体层（13）。第一反射电极（17）在第一发光结构下电连接到第二半导体层。第二发光结构（20）包括第一导电类型的第三半导体层（21），第二有源区（22）和第二导电类型的第四半导体层（23）。第二反射电极（27）在第二发光结构下电连接到第四半导体层。第一电流阻挡层（18）形成在第一发光结构和第一欧姆接触层（15）之间。

6. 发明公开

KR1020130011484A 발광소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020130011484A
公开(公告)日：2013-01-30
申请号：KR1020110072661
申请日：2011-07-21
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 김현주
IPC分类号： H01L33/14 , H01L33/28
CPC分类号： H01L33/145 , H01L33/28
摘要： PURPOSE: A light emitting device is provided to improve the luminous efficiency of the light emitting device by reducing current concentration generating between a bearing substrate and an electrode. CONSTITUTION: An ohmic layer(150) is formed on a bearing substrate(190). A current blocking layer(145) is formed at a predetermined portion on the ohmic layer. A light emitting structure is formed on the ohmic layer and a current blocking layer. The current blocking layer includes zinc(Zn).
摘要翻译：目的：提供一种发光装置，通过减少轴承基板和电极之间产生的电流浓度来提高发光装置的发光效率。构成：在轴承衬底（190）上形成欧姆层（150）。电流阻挡层（145）形成在欧姆层上的预定部分。在欧姆层和电流阻挡层上形成发光结构。电流阻挡层包括锌（Zn）。

7. 发明公开

KR1020120037719A 발광소자 및 그 발광 소자의 제조 방법 有权
标题翻译：发光装置和用于制造发光装置的方法
公开(公告)号：KR1020120037719A
公开(公告)日：2012-04-20
申请号：KR1020100099347
申请日：2010-10-12
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 정병학
IPC分类号： H01L33/44 , H01L33/38 , H01L33/22 , H01L33/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/38
摘要： PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve stability and minimize damage in a manufacturing process. CONSTITUTION: A light emitting structure(120) includes a first conductive semiconductor layer(122), an active layer(124), and a second conductive semiconductor layer(126). A passivation layer(180) surrounds a part of the light emitting structure. A conductive support layer(170) surrounds a part of the light emitting structure and the passivation layer. A barrier layer(110) is located on a part of the first conductive semiconductor layer, the passivation layer, and the conductive support layer. A difference of work functions between the barrier layer and the first conductive semiconductor layer is 50 eV or more.
摘要翻译：目的：提供一种发光器件及其制造方法，以提高制造工艺中的稳定性和最小化损伤。构成：发光结构（120）包括第一导电半导体层（122），有源层（124）和第二导电半导体层（126）。钝化层（180）围绕发光结构的一部分。导电支撑层（170）围绕发光结构的一部分和钝化层。阻挡层（110）位于第一导电半导体层，钝化层和导电支撑层的一部分上。阻挡层和第一导电半导体层之间的功函的差为50eV以上。

8. 发明授权

KR102140278B1 발광 소자 有权
公开(公告)号：KR102140278B1
公开(公告)日：2020-07-31
申请号：KR1020140046794
申请日：2014-04-18
申请人： 엘지이노텍 주식회사
发明人： 염웅선 , 김소정 , 김현주 , 박경욱 , 추성호
IPC分类号： H01L33/14 , H01L33/36

9. 发明授权

KR101946919B1 발광소자 有权
公开(公告)号：KR101946919B1
公开(公告)日：2019-02-12
申请号：KR1020120090679
申请日：2012-08-20
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 김현주
IPC分类号： H01L33/38 , H01L33/40 , H01L33/44 , H01L33/62 , H01L25/075

10. 发明授权

KR101873556B1 발광소자 및 그 제조방법 有权
公开(公告)号：KR101873556B1
公开(公告)日：2018-07-02
申请号：KR1020100114041
申请日：2010-11-16
申请人： 엘지이노텍 주식회사
发明人： 정환희 , 김소정 , 김현주
IPC分类号： H01L33/20 , H01L33/38 , H01L33/14 , H01L33/10 , H01L33/44 , H01L33/22 , H01L33/00
摘要： 실시예에따른발광소자는복수의보조전극층과반사층을가지고, 상기보조전극층및 반사층을고정하는채널층을포함하여상기보조전극층이외로전류확산을방지하며, 전극층의박리를방지할수 있다. 또한, 실시예에따른발광소자제조방법은 PR 리프트오프공정을최소화하여발광소자의신뢰성저하를방지할수 있다.

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