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    • 7. 发明公开
    • 박막 트랜지스터 표시판의 제조 방법
    • 制造薄膜晶体管显示面板的方法,特别是关于使用环境友好的清洁工艺
    • KR1020040107986A
    • 2004-12-23
    • KR1020030038713
    • 2003-06-16
    • 삼성전자주식회사
    • 장원기이진욱김유근송원유정식최동욱
    • G02F1/136
    • H01L27/12C23C16/4405H01L21/84H01L27/1214H01L27/124H01L27/1259
    • PURPOSE: A method for manufacturing a thin film transistor display panel is provided to prevent environmental pollution and reduce the manufacturing cost of cleaning gas by using environment-friendly gas. CONSTITUTION: Gate lines are formed on an insulating substrate(110). A gate insulating layer, a semiconductor layer, and an ohmic contact layer are formed on the gate lines. Before forming the gate insulating layer, the semiconductor layer, and the ohmic contact layer, an inside of a CVD(Chemical Vapor Deposition) device is cleaned by F_2. Data lines including source and drain electrodes are formed on the ohmic contact layer. A passivation film is deposited on the data lines. Pixel electrodes are formed on the passivation film, and are connected with drain electrodes through contact holes.
    • 目的:提供一种用于制造薄膜晶体管显示面板的方法,以通过使用环境友好的气体来防止环境污染并降低清洁气体的制造成本。 构成:栅极线形成在绝缘基板(110)上。 在栅极线上形成栅极绝缘层,半导体层和欧姆接触层。 在形成栅极绝缘层,半导体层和欧姆接触层之前,通过F_2清洁CVD(化学气相沉积)器件的内部。 包括源极和漏极的数据线形成在欧姆接触层上。 钝化膜沉积在数据线上。 像素电极形成在钝化膜上,并通过接触孔与漏电极连接。
    • 8. 发明公开
    • 게이트 또는 소스/드레인 전극 패턴시 사용되는 6에이족 금속식각액
    • 6A组用于栅格或源/漏极电极的蚀刻
    • KR1020010003399A
    • 2001-01-15
    • KR1019990023692
    • 1999-06-23
    • 삼성전자주식회사
    • 김진수김진수유정식
    • H01L29/786
    • PURPOSE: An etchant of 6a group is to improve an etching efficiency for a bottom metallic layer in a process for etching a double layer structured gate. CONSTITUTION: An etchant of 6a group comprises 10 to 13% by weight of Ce(NH4)x(NO3)y, wherein x exceeds zero, and y exceeds zero; 4 to 6% by weight of HClO4; and 1 to 3% by weight of CH3COOH, alternatively Ce(NH4)x(NO3)y, wherein x exceeds zero and y exceeds zero, being contained by 11 to 13% by weight, HClO4 being contained by 4 to 5% by weight, CH3COOH being contained by 1 to 2% by weight, and x is 2 and y is 6. Using the etchant, a Cr layer is selectively etched and the remaining chemical components after etching does not nearly exist, so that the Cr layer being directly etched immediately after an Al alloy layer is etched and therefrom a photoresist is stripped off, thus to eliminate a hard baking process and an ashing process.
    • 目的:6a组的蚀刻剂是在蚀刻双层结构栅极的工艺中提高底部金属层的蚀刻效率。 构成:6a族的蚀刻剂包含10至13重量%的Ce(NH 4)x(NO 3)y,其中x超过零,y超过0; 4至6重量%的HClO 4; 和1至3重量%的CH 3 COOH,或者Ce(NH 4)x(NO 3)y,其中x超过零且y超过零,含有11至13重量%,HClO 4含有4至5重量% ,CH 3 COOH为1〜2重量%,x为2,y为6.使用蚀刻剂,选择性地蚀刻Cr层,蚀刻后残留的化学成分几乎不存在,使Cr层直接 在Al合金层被蚀刻后立刻蚀刻,从而剥离光致抗蚀剂,从而消除硬烘烤过程和灰化过程。
    • 9. 发明公开
    • 기판 로딩 장치
    • 装载基板的装置
    • KR1020000032327A
    • 2000-06-15
    • KR1019980048749
    • 1998-11-13
    • 삼성전자주식회사
    • 이영식정현식유정식
    • H01L21/68
    • PURPOSE: An apparatus for loading a substrate is provided to accurately and fast align a substrate without electric control, and to prevent a damage to the substrate. CONSTITUTION: An apparatus for loading a substrate comprises rotation shafts(110) and substrate alignment tools(100). The rotation shafts(110) are serially arranged in a substrate inlet of an equipment(401) to transfer substrates with a predetermined speed in the equipment(401). Pairs of the substrate alignment tools(100) are arranged at each side of the rotation shafts(110) to guide two edges of the substrate to be put on the rotation shafts(110), so that the substrate can be aligned with the balance at a reference position of the rotation shafts(110).
    • 目的:提供一种用于装载基板的装置,用于在不进行电气控制的情况下准确且快速地对准基板,并且防止对基板的损坏。 构成:用于装载基板的装置包括旋转轴(110)和基板对准工具(100)。 旋转轴(110)串联地设置在设备(401)的基板入口中,以在设备(401)中以预定的速度传送基板。 基板对准工具(100)的一对布置在旋转轴(110)的每一侧,以引导要放置在旋转轴(110)上的基板的两个边缘,使得基板可以与天平对准 旋转轴(110)的基准位置。
    • 10. 发明公开
    • 표면 처리 방법
    • KR1019930006842A
    • 1993-04-22
    • KR1019910016278
    • 1991-09-18
    • 삼성전자주식회사
    • 유정식김창욱
    • H01L21/302
    • 반도체 장치의 제조공정중에서 웨이퍼 등의 피처리물에 관하여 워터마크(Water mark)가 발생하지 않게 표면처리를 하는 방법에 관한 것으로, 소정수의 처리조를 포함한 처리조 열에 따라 소정의 피처리물을 이송하면서 상기 피처리물을 소정의 순서로 상기 처리조중의 처리액에 담구었다가 들어올리는 단계와, 소정 회수로 순수가 담긴 처리조에 상기 피처리물을 담구었다가 들어올리는 순수세정 단계와, 순수세정한 피처리물을 건조기로 이송하여 건조하는 단계를 포함하는 상기 피처리물의 표면을 처리하는 반도체 장치의 표면처리 방법에 있어서, 상기 순수 세정단계의 마지막 세정단계에서 피처물이 순수가 담긴 처리조 내에 잠겨 있는 상태에서 순수를 배수하는 단계를 더 포함하는 것을 특징으로 한다.