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1. 实用新型

KR2019970025782U 화학기상 증착용 가스 공급 장치 无效
标题翻译：化学气相沉积气体供应装置
公开(公告)号：KR2019970025782U
公开(公告)日：1997-06-20
申请号：KR2019950036262
申请日：1995-11-28
申请人： 삼성전자주식회사
发明人： 최두환 , 류시원
IPC分类号： H01L21/205
摘要： 반도체웨이퍼의표면에박막으로적층될화학물질의잔량을확인하기용이하도록하는화학기상증착용가스공급장치가개시되어있다. 본고안에따른화학기상증착용가스공급장치는리모트가스박스를구비하는화학기상증착용가스공급장치에있어서, 리모터가스박스내부에구비된 TEOS 앰플의화합물양을육안으로확인할수 있도록리모트가스박스의외벽이투명체로구성됨을특징으로한다. 따라서, 리모트가스박스의뚜껑을수시로개폐하지않아도작업중에 TEOS의잔량을확인할수 있으며, 이에따라공정작업시시간적손실을줄일수 있는효과가있다.

2. 发明公开

KR1020040043932A 게이트 밸브 无效
标题翻译：闸阀
公开(公告)号：KR1020040043932A
公开(公告)日：2004-05-27
申请号：KR1020020072398
申请日：2002-11-20
申请人： 삼성전자주식회사
发明人： 류시원
IPC分类号： H01L21/02
摘要： PURPOSE: A gate valve is provided to performing an assembling process and a disassembling process without moving a module in a process for exchanging the gate valve by improving a shape of a valve housing. CONSTITUTION: A gate valve includes a valve housing, a blade, and a gate valve in order to isolate a transfer module from a process chamber. The valve housing(110) is installed between the transfer module(200) and a process module to form a transfer path of a wafer. The blade(130) is coupled to the valve housing in order to interrupt the transfer path of the wafer. The gate valve(100) is formed with a driving unit for driving the blade. The valve housing includes a first side(114) coupled to the transfer module, a second side(116) coupled to the process module, and a third side in which the driving unit is installed.
摘要翻译：目的：提供一种闸阀，以通过改善阀壳的形状来进行组装过程和拆卸过程，而不需要在更换闸阀的过程中移动模块。构成：闸阀包括阀壳体，叶片和闸阀，以便将转移模块与处理室隔离开来。阀壳体（110）安装在转移模块（200）和处理模块之间以形成晶片的转移路径。刀片（130）联接到阀壳体以便中断晶片的传送路径。闸阀（100）形成有用于驱动叶片的驱动单元。阀壳体包括联接到转移模块的第一侧面（114），联接到过程模块的第二侧面（116）和安装驱动单元的第三侧面。

3. 发明公开

KR1020080077857A 소정 온도의 냉각수를 보충하기 위한 공급부를 구비하는반도체 제조 설비 및 이를 이용한 냉각수 공급 방법 无效
标题翻译：制造具有供应部分的半导体的装置，用于补充具有预定温度的冷却剂和使用其的供应冷却剂的方法
公开(公告)号：KR1020080077857A
公开(公告)日：2008-08-26
申请号：KR1020070017586
申请日：2007-02-21
申请人： 삼성전자주식회사
发明人： 최용호 , 이광명 , 류시원 , 이인주
IPC分类号： H01L21/02
摘要： Epuipment of fabricating semiconductors having a supply unit for supplying coolant and a method of supplying the coolant using the same are provided to control easily temperature of a chamber and wafers by performing the cooling using the coolant with a predetermined temperature. Equipment of fabricating semiconductors includes a coolant circulation unit and a coolant supply unit(140). The coolant circulation unit circulates coolant in a wafer processing device. The coolant supply unit, which supplies the coolant to the coolant circulation unit, includes a storing unit(142) and a detection unit(150). The storing unit stores the coolant. The detection unit measures temperature of the coolant supplied from the storing unit.
摘要翻译：提供具有用于供应冷却剂的供应单元的制造半导体的设备以及使用其供给冷却剂的方法，以通过使用具有预定温度的冷却剂进行冷却来容易地控制室和晶片的温度。制造半导体的设备包括冷却剂循环单元和冷却剂供应单元（140）。冷却剂循环单元将冷却剂循环在晶片处理装置中。向冷却剂循环单元供应冷却剂的冷却剂供给单元包括存储单元（142）和检测单元（150）。存储单元存储冷却剂。检测单元测量从储存单元供应的冷却剂的温度。

4. 发明公开

KR1020040015602A 반도체 제조 장치 无效
标题翻译：半导体制造设备
公开(公告)号：KR1020040015602A
公开(公告)日：2004-02-19
申请号：KR1020020047886
申请日：2002-08-13
申请人： 삼성전자주식회사
发明人： 류시원 , 김종우 , 조정훈 , 김영일 , 이상욱
IPC分类号： H01L21/205
摘要： PURPOSE: A semiconductor manufacturing apparatus is provided to be capable of preventing process gas from flowing into a heater by installing a ceramic ring at the outer portion of a quartz plate. CONSTITUTION: A semiconductor manufacturing apparatus is provided with a process chamber(100) and a chuck(200) installed at the predetermined inner portion of the process chamber. At this time, the chuck includes a quartz plate(220), a susceptor(210) located at the upper portion of the plate for forming a closed space and loading a substrate, and a heater(240) located at the closed space for heating the substrate. The semiconductor manufacturing apparatus further includes a gas jetting part for jetting process gas to the substrate. Preferably, a ceramic ring(280) is installed along the peripheral portion of the chuck between the plate and the susceptor for preventing the inflow of the process gas.
摘要翻译：目的：提供一种半导体制造装置，其能够通过在石英板的外部设置陶瓷环来防止工艺气体流入加热器。构成：半导体制造装置设置有处理室（100）和安装在处理室的预定内部的卡盘（200）。此时，卡盘包括石英板（220），位于板的上部的基座（210），用于形成封闭空间并加载基板;以及加热器（240），位于封闭空间处用于加热底物。半导体制造装置还包括用于向处理基板喷射处理气体的气体喷射部。优选地，陶瓷环（280）沿着卡盘的周边部分安装在板和基座之间，以防止工艺气体的流入。

5. 发明公开

KR1020040043026A 리프팅 장치 无效
标题翻译：提升装置
公开(公告)号：KR1020040043026A
公开(公告)日：2004-05-22
申请号：KR1020020071018
申请日：2002-11-15
申请人： 삼성전자주식회사
发明人： 홍형식 , 금경수 , 박충훈 , 조정훈 , 류시원
IPC分类号： H01L21/68
摘要： PURPOSE: A lifting apparatus is provided to be capable of restraining the generation of a popping phenomenon and stably loading and unloading a semiconductor substrate. CONSTITUTION: A lifting apparatus includes a socket(110) connected to the lower portion of the first hole. At this time, the socket has the second hole having the same pivot as the first hole. The lifting apparatus further includes a bellows(120) connected with the lower portion of the socket and a lift pin(130). The lift pin includes a load integrated along the pivot of the second hole and bellows for loading and unloading a process object part by the motion of the bellows, and a head formed at the upper portion of the load for supporting the process object part. A path is formed between the second hole and the lift pin for exhausting the gas of the bellows while the bellows is shrunk. Preferably, a groove and the third hole are used as the path.
摘要翻译：目的：提供一种能够抑制产生爆裂现象并稳定地加载和卸载半导体衬底的提升装置。构成：提升装置包括连接到第一孔的下部的插座（110）。此时，插座具有与第一孔相同的枢轴的第二孔。提升装置还包括与插座的下部连接的波纹管（120）和升降销（130）。提升销包括沿着第二孔和波纹管的枢轴一体化的负载，用于通过波纹管的运动装载和卸载处理对象部分，以及形成在用于支撑处理对象部分的负载的上部的头部。在波纹管收缩时，在第二孔和提升销之间形成有用于排出波纹管的气体的路径。优选地，使用槽和第三孔作为路径。

6. 发明公开

KR1020040039792A 반도체 제조설비용 프로세스챔버 无效
标题翻译：半导体制造设备的工艺室
公开(公告)号：KR1020040039792A
公开(公告)日：2004-05-12
申请号：KR1020020067978
申请日：2002-11-04
申请人： 삼성전자주식회사
发明人： 김영일 , 백세웅 , 이상옥 , 류시원
IPC分类号： H01L21/205
摘要： PURPOSE: A process chamber for semiconductor fabricating equipment is provided to prevent a lift pin from being broken by a wafer transfer arm by installing the lift pin having a gas exhaust hole inside a process chamber and by exhausting the gas inside a bellows to the outside along the gas exhaust hole of the lift pin when the lift pin is transferred upward to load a wafer. CONSTITUTION: An insertion hole(194) is formed in the center of a pin supporting socket(193) that penetrates a heater and a susceptor(182). The lift pin(191) vertically moves as a heater supporter moves vertically and places the wafer on the susceptor, inserted into the insertion hole. One side end of the bellows(196) is inserted into the lower portion of the pin supporting socket. The bellows contracts and expands as the heater supporter moves vertically, sealed from the outside. A supporting cap(198) is inserted into the other side end of the bellows to seal the bellows, vertically transferring the lift pin as the heater supporter moves vertically. A gas exhaust unit exhausts the inner gas of the bellows to the outside as the bellows contracts.
摘要翻译：目的：提供一种用于半导体制造设备的处理室，以通过将具有排气孔的提升销安装在处理室内并通过将波纹管内的气体排出到外部来防止升降销被晶片传送臂破坏当提升销向上传送以装载晶片时，升降销的排气孔。构成：穿过加热器和基座（182）的销支撑插座（193）的中心形成插入孔（194）。提升销（191）随着加热器支撑件垂直移动而垂直移动，并将晶片放置在基座上，插入插入孔中。波纹管（196）的一侧端插入销支撑插座的下部。当加热器支架垂直移动时，波纹管收缩并膨胀，从外部密封。支撑帽（198）插入波纹管的另一侧端部以密封波纹管，当加热器支撑件垂直移动时垂直传送升降销。当波纹管收缩时，排气单元将波纹管的内部气体排出到外部。

7. 发明公开

KR1020040022649A 반도체 소자 제조용 웨이퍼 처리 시스템 无效
标题翻译：用于制造半导体器件的抛光工艺系统
公开(公告)号：KR1020040022649A
公开(公告)日：2004-03-16
申请号：KR1020020054261
申请日：2002-09-09
申请人： 삼성전자주식회사
发明人： 류시원
IPC分类号： H01L21/205
摘要： PURPOSE: A wafer process system for fabricating a semiconductor device is provided to prevent wafer damage or a process defect by precisely detecting whether a wafer exists or whether the wafer is in its normal position when the wafer is transferred in a buffer chamber. CONSTITUTION: A process module(110) includes a reaction chamber for performing a predetermined process on a wafer. A loadlock chamber(130) transfers the state of the wafer from atmospheric pressure to vacuum, and viceversa. A wafer handler(122) is installed in the buffer chamber(120) to transfer the wafer. An end effector(124) is connected to the wafer handler through an arm assembly(123). A pair of sensors are installed at both sides of the end effector in the buffer chamber to detect whether the wafer exists on the end effector or whether the wafer is in its normal state.
摘要翻译：目的：提供一种用于制造半导体器件的晶片处理系统，以通过精确检测晶片是否存在或当晶片在缓冲室中转移时晶片是否处于其正常位置来防止晶片损坏或工艺缺陷。构成：处理模块（110）包括用于在晶片上执行预定处理的反应室。负载锁定室（130）将晶片的状态从大气压转移到真空，反之亦然。晶片处理器（122）安装在缓冲室（120）中以转移晶片。端部执行器（124）通过臂组件（123）连接到晶片处理器。一对传感器安装在缓冲室中末端执行器的两侧，以检测晶片是否存在于末端执行器上，还是晶片是否处于正常状态。

8. 发明公开

KR1020030075736A 반도체 기판을 가열하기 위한 장치 无效
标题翻译：加热半导体基板的装置
公开(公告)号：KR1020030075736A
公开(公告)日：2003-09-26
申请号：KR1020020015095
申请日：2002-03-20
申请人： 삼성전자주식회사
发明人： 이태원 , 홍형식 , 성순환 , 윤명식 , 류시원
IPC分类号： H01L21/324
摘要： PURPOSE: An apparatus for heating a semiconductor substrate is provided to be capable of preventing process gas from being flowed into a space for installing a heater by using a sealing structure. CONSTITUTION: An apparatus(200) for heating a semiconductor substrate is provided with an insulating plate(208) having the first concave portion defined by the first protrusion part(208a), a heating plate(210) having the second concave portion defined by the second protrusion part, installed at the upper portion of the insulating plate for supporting and heating a semiconductor substrate, an insulating ring(218) for fixing the heating plate, a heater installed at the space(214) defined by the first and second concave portion for heating the semiconductor substrate, and the first sealing part(216) for preventing process gas from being flowed into the space.
摘要翻译：目的：提供一种用于加热半导体衬底的装置，以能够防止工艺气体通过使用密封结构流入用于安装加热器的空间。构成：用于加热半导体衬底的装置（200）设置有绝缘板（208），该绝缘板具有由第一突出部分（208a）限定的第一凹部，加热板（210），其具有由第二突起部，安装在用于支撑和加热半导体基板的绝缘板的上部，用于固定加热板的绝缘环（218），安装在由第一和第二凹部限定的空间（214）的加热器用于加热半导体衬底，以及用于防止工艺气体流入空间的第一密封部分（216）。

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