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1. 发明公开

KR1020070013100A 반도체소자 제조설비 및 이를 이용한 샤웨헤드의 냉각방법 无效
标题翻译：使用相同方式制作淋浴器的半导体制造设备和冷却方法
公开(公告)号：KR1020070013100A
公开(公告)日：2007-01-30
申请号：KR1020050067463
申请日：2005-07-25
申请人： 삼성전자주식회사
发明人： 손장호 , 고현국 , 구본옥 , 서주형 , 김성만 , 김영규 , 이기종
IPC分类号： H01L21/205 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45572 , H01L21/67248
摘要： Equipment for fabricating a semiconductor device is provided to maintain a shower heat at a predetermined temperature by adjusting the flowrate of cooling fluid so that the temperature variation of the shower head varying with the position of a heater clock is controlled. While a heater block on which a wafer is placed is elevated toward a shower head to perform a predetermined process, cooling fluid is supplied to the shower head. The temperature of the shower head elevated by the heater block is measured by a temperature gauge(S20). It is determined whether the temperature value of the shower head measured by the temperature gauge is a predetermined temperature value(S30). If so, a process is continuously performed(S40). If not, the flowrate of the cooling fluid is adjusted to control the temperature of the shower head(S50).
摘要翻译：设置制造半导体器件的设备是通过调节冷却流体的流量来将喷淋热量保持在预定温度，从而控制喷淋头的温度变化随着加热器时钟的位置而变化。当其上放置晶片的加热器块朝着淋浴头升高以执行预定的处理时，将冷却流体供应到淋浴喷头。由加热器块升高的喷淋头的温度由温度计测量（S20）。确定由温度计测量的喷淋头的温度值是否为预定的温度值（S30）。如果是，则继续进行处理（S40）。如果不是，则调节冷却液的流量以控制喷淋头的温度（S50）。

2. 发明公开

KR1020070000063A 반도체 기판 가공 장치의 진공 시스템 및 이의 모니터링방법 无效
标题翻译：制造半导体基板的装置的真空系统及其监测方法
公开(公告)号：KR1020070000063A
公开(公告)日：2007-01-02
申请号：KR1020050055500
申请日：2005-06-27
申请人： 삼성전자주식회사
发明人： 고현국 , 박인선 , 길정환 , 구본옥 , 하재규 , 손장호
IPC分类号： H01L21/02
摘要： A vacuum system of a semiconductor substrate processing apparatus and a monitoring method thereof are provided to prevent a pumped material from flowing reversely into a process chamber by blocking automatically an opening/closing valve in an abnormal vacuum pump state using a control unit. A vacuum system of a semiconductor substrate processing apparatus includes a vacuum pump(120) for controlling the degree of vacuum in a process chamber, opening/closing valves(116,118,124) for opening/closing vacuum lines connected to the process chamber and the vacuum pump, a current detecting unit(130) for detecting a driving current capable of operating the vacuum pump, and a control unit. The control unit(140) controls the opening/closing valves in order to prevent the backflow in the vacuum lines.
摘要翻译：提供半导体基板处理装置的真空系统及其监视方法，以防止泵送材料通过使用控制单元在异常真空泵状态下自动阻塞打开/关闭阀而反向流入处理室。半导体基板处理装置的真空系统包括用于控制处理室中的真空度的真空泵（120），用于打开/关闭连接到处理室和真空泵的真空管线的打开/关闭阀（116,118,124）用于检测能够操作真空泵的驱动电流的电流检测单元（130）和控制单元。控制单元（140）控制打开/关闭阀，以防止真空管线中的回流。

3. 发明公开

KR1020070014868A 스퍼터링 설비 无效
标题翻译：飞溅设备
公开(公告)号：KR1020070014868A
公开(公告)日：2007-02-01
申请号：KR1020050069850
申请日：2005-07-29
申请人： 삼성전자주식회사
发明人： 김영규 , 고현국 , 구본옥 , 손장호 , 김창수
IPC分类号： H01L21/203
CPC分类号： C23C16/4411 , C23C16/4401
摘要： Sputtering equipment is provided to block the current capable of flowing along a coolant supply line by including a line adaptor made of an insulation material in the coolant supply line between a target and a chamber. A coolant supply line(132a,132b) supplies coolant to the inside of a chamber. A line adaptor(150) made of an insulation material blocks the low of current through the coolant supply line, formed in the coolant supply line. A target is installed in the upper part of the chamber. The coolant supply line supplies coolant to the inside of the target so as to cool the target.
摘要翻译：提供溅射设备以通过在目标和室之间的冷却剂供应管线中包括由绝缘材料制成的线路适配器来阻挡能够沿着冷却剂供应管线流动的电流。冷却剂供应管线（132a，132b）将冷却剂供应到室的内部。由绝缘材料制成的线路适配器（150）阻挡形成在冷却剂供应管线中的冷却剂供应管线的低电流。目标安装在腔室的上部。冷却剂供应管路将冷却剂供应到目标物体的内部，以冷却目标物。

4. 发明授权

KR102161160B1 기판의 표면 검사 방법 및 이를 수행하기 위한 장치 有权
公开(公告)号：KR102161160B1
公开(公告)日：2020-09-29
申请号：KR1020130130794
申请日：2013-10-31
申请人： 삼성전자주식회사
发明人： 강병복 , 강석민 , 구본옥 , 김경환 , 김명우 , 김인기 , 김현철 , 노성기 , 민경진 , 이은석 , 홍진석
IPC分类号： G01N21/956 , G01B11/30 , H01L21/66

5. 发明公开

KR1020070013037A 금속막 패턴을 갖는 게이트 전극 제조방법 无效
标题翻译：具有金属层图案的门电极的制造方法
公开(公告)号：KR1020070013037A
公开(公告)日：2007-01-30
申请号：KR1020050067372
申请日：2005-07-25
申请人： 삼성전자주식회사
发明人： 김성만 , 고현국 , 구본옥 , 손장호 , 서주형
IPC分类号： H01L21/336 , H01L21/24
摘要： A method for fabricating a gate electrode with a metal layer pattern is provided to form a gate electrode with an improved characteristic by interposing a metal silicon nitride layer between a polysilicon layer and a metal layer. A polysilicon layer is formed on a semiconductor substrate(1S). A metal silicide layer is formed on the polysilicon layer(3S). The metal silicide layer is nitridized by an in-situ method to form a metal silicon nitride layer(5S). A metal layer is formed on the metal silicon nitride layer(7S). The metal layer, the metal silicon nitride layer and the polysilicon layer are patterned to form a polysilicon layer pattern, a metal silicon nitride layer pattern and a metal layer pattern(9S). The metal silicon layer and the metal silicon nitride layer can be made of a tungsten silicide layer and a tungsten silicon nitride layer, respectively.
摘要翻译：提供一种制造具有金属层图案的栅电极的方法，以通过在多晶硅层和金属层之间插入金属氮化硅层来形成具有改进特性的栅电极。在半导体衬底（1S）上形成多晶硅层。在多晶硅层（3S）上形成金属硅化物层。金属硅化物层通过原位法氮化，形成金属氮化硅层（5S）。在金属氮化硅层（7S）上形成金属层。对金属层，金属氮化硅层和多晶硅层进行构图以形成多晶硅层图案，金属氮化硅层图案和金属层图案（9S）。金属硅层和金属氮化硅层可以分别由硅化钨层和氮化硅钨层构成。

6. 发明公开

KR1020150049799A 기판의 표면 검사 방법 및 이를 수행하기 위한 장치 审中-实审
标题翻译：检查基板的表面的方法和执行该基板的装置
公开(公告)号：KR1020150049799A
公开(公告)日：2015-05-08
申请号：KR1020130130794
申请日：2013-10-31
申请人： 삼성전자주식회사
发明人： 강병복 , 강석민 , 구본옥 , 김경환 , 김명우 , 김인기 , 김현철 , 노성기 , 민경진 , 이은석 , 홍진석
IPC分类号： G01N21/956 , G01B11/30 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/8851 , G01N2021/8887
摘要： 기판의표면검사방법에따르면, 공정챔버로반입되기전에기판의제 1 표면이미지를획득한다. 상기제 1 표면이미지를처리하여상기기판의공정전 표면불량을검출한다. 따라서, 기판들을별도의검사장치로이송시키지않고도모든기판들에대한표면검사가수행될수 있다.
摘要翻译：本发明提供了检查所有基板的表面的方法。根据检查基板的表面的方法，在进入处理室之前，获得基板表面的第一图像。通过在基板的处理之前处理第一表面的图像来检测基板表面上的所有缺陷。因此，不将基板转移到单独的测试装置，可以执行所有基板的表面检查。

7. 发明公开

KR1020070000609A 크라이오 펌프 无效
标题翻译：低温泵
公开(公告)号：KR1020070000609A
公开(公告)日：2007-01-03
申请号：KR1020050056095
申请日：2005-06-28
申请人： 삼성전자주식회사
发明人： 구본옥 , 고현국 , 손장호 , 김영규 , 김대길
IPC分类号： F04B37/08 , H01L21/02
摘要： A cryopump is provided to mount a plurality of low temperature arrays in a housing to carry out regeneration of adsorption substances in one of them and continue pumping work by the rest of them, thereby driving an operation chamber continuously without delay. A cryopump includes a housing(112), and at least two low temperature arrays(118) provided in the housing and having adsorption substances(120) such as active charcoal or zeolite for carrying out cyrocondensation and cryosorption for gas discharged from an operation chamber(100). A blocking plate(126) separates an inside of the housing into at least two spaces for separating the low temperature arrays from each other. A regeneration gas supply part(130) supplies regeneration gas to the spaces in the housing respectively for regenerating the adsorption substances.
摘要翻译：提供了一个低温泵，用于将多个低温阵列安装在壳体中，以便在其中一个中进行吸附物质的再生，并继续通过其中的其余部分进行泵送作业，从而连续不间断地驱动操作室。低温泵包括壳体（112）和设置在壳体中的至少两个低温阵列（118），并且具有用于对从操作室排出的气体进行缩水和低温吸附的吸附物质（120），例如活性炭或沸石 100）。阻挡板（126）将壳体的内部分成用于将低温阵列彼此分离的至少两个空间。再生气体供给部（130）分别向壳体内的空间供给再生气体，以再生吸附物质。

8. 发明公开

KR1020060105073A 가스 제공 장치 및 이를 이용한 가스 제공 방법 无效
标题翻译：用于供应气体的装置和使用该气体的方法
公开(公告)号：KR1020060105073A
公开(公告)日：2006-10-11
申请号：KR1020050027443
申请日：2005-04-01
申请人： 삼성전자주식회사
发明人： 고현국 , 조영주 , 구본옥 , 손장호
IPC分类号： H01L21/205
CPC分类号： C23C16/4408 , H01L21/67017
摘要： 오염을 방지하는 가스 제공 방법에 있어서, 기판 상에 막을 형성하기 위하여 상기 기판 상으로 가스 제공 라인을 통해 반응 가스를 제공한다. 가스 제공 라인 내에서 분해된 반응 가스를 재결합시키기 위한 결합 물질을 가스 제공 라인 내부로 제공한다. 가스 제공 라인에 잔류하는 반응 가스 또는 결합 물질을 제거하기 위한 퍼지 가스를 제공한다. 이에 따라, 가스 제공 라인 내부에 잔류하는 반응 가스들을 용이하게 제거함으로써 가스 제공 라인이 오염되는 것을 방지할 수 있다.

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