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    • 2. 发明公开
    • 인쇄회로기판의 제조방법
    • 制造印刷电路板的方法
    • KR1020130046723A
    • 2013-05-08
    • KR1020110111266
    • 2011-10-28
    • 삼성전기주식회사
    • 방정윤이동준조성민문정수김정석이은혜테루야키시모지김치성
    • H05K3/28H05K3/18
    • PURPOSE: A manufacturing method of a printed circuit board having an NSMD(Non Solder Mask Defined) type is provided to remove a catalyst adhering to a film layer by coating and removing the film layer, thereby preventing a blurring phenomenon caused by the catalyst remaining on a substrate in processing a surface. CONSTITUTION: A base substrate is coated with a first film layer on which a first circuit pattern forming area is opened(S100). A first plating layer is formed in the base substrate coated with the first film layer(S102). The base substrate in which the first plating layer is formed is coated with a second film layer of which a second circuit pattern forming area is opened(S103). A circuit pattern is formed by forming a second plating layer in the first and second circuit pattern forming area(S105). The second film layer, the first plating layer and the first film layer are sequentially removed(S106,S107,S108). [Reference numerals] (AA) Start; (BB) End; (S100) Coat a first film layer on a base substrate; (S101) Open a first circuit pattern forming area by removing a part of the first film layer; (S102a) Adsorb a catalyst; (S102b) Form a first plating layer by plating metal; (S103) Coat a second film layer; (S104) Open a second circuit pattern forming area by removing a part of the second film layer; (S105) Form a second plating layer on first and second circuit patterns; (S106) Remove the second film layer; (S107) Etch the first plating layer; (S108) Remove the first film layer; (S109) Coat solder resist which part is removed; (S110) Process a surface
    • 目的:提供具有NSMD(非焊接掩模定义)型的印刷电路板的制造方法,通过涂布和除去膜层来除去附着在膜层上的催化剂,从而防止由催化剂残留引起的模糊现象 处理表面的基板。 构成:基底衬底涂有第一电路图形形成区域打开的第一膜层(S100)。 在涂覆有第一膜层的基底基板中形成第一镀层(S102)。 其上形成有第一镀层的基底涂覆有打开第二电路图案形成区域的第二膜层(S103)。 通过在第一和第二电路图案形成区域中形成第二镀层形成电路图案(S105)。 依次去除第二膜层,第一镀层和第一膜层(S106,S107,S108)。 (附图标记)(AA)开始; (BB)结束; (S100)在基底基板上涂覆第一膜层; (S101)通过去除第一膜层的一部分来打开第一电路图案形成区域; (S102a)吸附催化剂; (S102b)通过电镀金属形成第一镀层; (S103)涂覆第二膜层; (S104)通过去除第二膜层的一部分来打开第二电路图案形成区域; (S105)在第一和第二电路图案上形成第二镀层; (S106)取出第二膜层; (S107)蚀刻第一镀层; (S108)拆下第一层膜; (S109)去除部分的涂覆阻焊剂; (S110)处理表面
    • 6. 发明公开
    • 니켈-철-인 3원계 합금
    • 镍 - 磷 - 磷合金
    • KR1020000007192A
    • 2000-02-07
    • KR1019980026389
    • 1998-07-01
    • 삼성전기주식회사
    • 손희영김치성최영식
    • C22C38/08
    • PURPOSE: A Ni-Fe-P alloy is provided for a thin film material which has the high resistivity and saturated magnetic flux density and can be applied to the magnetic layer material of an inductive portion of the merged MR head or the core material of a thin film inductor or a thin film transformer. CONSTITUTION: The Ni-Fe-P alloy comprises nickel in a range of 6-17 percent by weight, iron in a range of 73-87 percent by weight, and phosphorus in a range of 7-20 percent by weight. The alloy has a resistivity more than 100 microOhm centimeter and a saturated magnetic flux density more than 1.4 T.
    • 目的:提供具有高电阻率和饱和磁通密度的薄膜材料的Ni-Fe-P合金,并且可以将其应用于合并的MR头的感应部分的磁性层材料或者 薄膜电感器或薄膜变压器。 构成:Ni-Fe-P合金包含6-17重量%的镍,73-87重量%的铁,和7-20重量%的磷。 该合金的电阻率大于100微欧姆厘米,饱和磁通密度大于1.4T。