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    • 3. 发明公开
    • Elliptic filter
    • ELLIPTIC过滤器
    • KR20120016505A
    • 2012-02-24
    • KR20100078930
    • 2010-08-16
    • SNU R& DB FOUNDATION
    • SEO KWANG SEOKJEON NAM CHEOL
    • H01P7/08
    • H01P7/08H01P1/2088H01P1/2135H01P7/065
    • PURPOSE: An elliptic filter is provided to improve performance of the filter by freely forming positive coupling and negative coupling and to miniaturize the size of a resonance. CONSTITUTION: A first line(22) is composed of an internal metal pattern having predetermined width and length. A second line(32) is composed of a top metal pattern having the predetermined width and length. The first line and the second line are perpendicularly overlapped and coupled. A substrate, a first dielectric layer(20), and a second dielectric layer(30) are successively laminated. The first line is connected to earth through via hole formed in the first dielectric layer. The second line is connected to the earth through via hole formed in the first dielectric layer and the second dielectric layer.
    • 目的:提供椭圆滤波器,通过自由形成正耦合和负耦合并使谐振的尺寸小型化来提高滤波器的性能。 构成:第一线(22)由具有预定宽度和长度的内部金属图案组成。 第二线(32)由具有预定宽度和长度的顶部金属图案构成。 第一行和第二行垂直重叠并耦合。 依次层叠基板,第一电介质层(20)和第二电介质层(30)。 第一线通过形成在第一介电层中的通孔与地相连。 第二线路通过形成在第一介电层和第二电介质层中的通孔连接到地面。
    • 5. 发明授权
    • Nand flash memory array having 3d star structure and fabrication method thereof
    • 具有3D星形结构的NAND闪存存储阵列及其制造方法
    • KR101103607B1
    • 2012-01-09
    • KR20100134312
    • 2010-12-24
    • SNU R& DB FOUNDATION
    • PARK BYUNG GOOKKIM YOON
    • H01L27/115H01L21/8247
    • H01L27/2463H01L21/265H01L21/823871H01L27/0688H01L27/2481
    • PURPOSE: An NAND flash memory which includes a three-dimensional star structure capable of selecting a layer and a manufacturing method thereof are provided to independently select each string laminated in a layer selection line, thereby horizontally increasing the desired number of bit lines. CONSTITUTION: An active line is arranged with two or more semiconductor layers(22,24,26,28). A bit line(BLs) is electrically connected to the semiconductor layer with one line. A plurality of layer selection lines(LSL1,LSL2,LSL3) is arranged with the same number as the number of the semiconductor layers. A word line(WLs) is arranged by being separated from the layer selection lines. A ground selection line(GSL) is arranged by being separated from the word lines. A common source line(CSL) is electrically connected to the active lines.
    • 目的:提供一种包括能够选择层的三维星形结构的NAND闪存及其制造方法,以独立地选择层叠在层选择线中的每个串,从而水平增加所需数量的位线。 构成:有源线被布置有两个或多个半导体层(22,24,26,28)。 位线(BL)用一行电连接到半导体层。 多个层选择线(LSL1,LSL2,LSL3)被排列成与半导体层的数量相同的数目。 通过与层选择线分离来布置字线(WL)。 通过与字线分离来布置接地选择线(GSL)。 公共源极线(CSL)与有源线电连接。
    • 7. 发明公开
    • Apparatus and method for writing data
    • 用于写数据的装置和方法
    • KR20120019115A
    • 2012-03-06
    • KR20100082278
    • 2010-08-25
    • SNU R& DB FOUNDATION
    • CHOE SUG BONGMOON KYOUNG WOONGKIM KAB JIN
    • G11C11/15G11C11/16
    • G11C11/161G11C11/1675
    • PURPOSE: A data writing apparatus and a writing method thereof are provided to arrange a magnetic domain wall and a magnetic domain, thereby preventing magnetic domain wall merging phenomena. CONSTITUTION: A first wire(921) and a second wire(923) are diagonally arranged with respect to a width direction of a magnetic wire device. The first wire and the second wire are arranged in a longitudinal direction of the magnetic wire device with a fixed distance. A current applier(930) applies current in the first wire and the second wire with opposite current flow directions. The first wire and the second wire are arranged at an angle of 45 degrees from the magnetic wire device.
    • 目的:提供数据写入装置及其写入方法以布置磁畴壁和磁畴,从而防止磁畴壁融合现象。 构成:第一线(921)和第二线(923)相对于磁线装置的宽度方向对角地布置。 第一线和第二线以固定距离布置在磁线装置的纵向方向上。 当前的施加器(930)在第一导线和第二导线中以相反的电流流动方向施加电流。 第一线和第二线与磁线装置成45度角配置。