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81. 发明授权

KR100455903B1 세정건조처리장치 有权
公开(公告)号：KR100455903B1
公开(公告)日：2005-01-24
申请号：KR1019980022196
申请日：1998-06-13
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 유지카미카와
IPC分类号： H01L21/304
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A cleaning and drying apparatus includes a cleaning bath 22 for collecting cleaning liquid for wafers, a drying chamber 23 arranged above the cleaning bath 22 to dry the wafers, a shutter 36 positioned between the cleaning bath 22 and the drying chamber 23 to define them communicably, a opening and closing mechanism 54 arranged outside a processing container to open and close the shutter 36, a connecting member 58 extending through an opening formed in an outer wall of the container to connect the shutter 36 with the mechanism 54, and a liquid sealing mechanism 60 for sealing the opening with sealing liquid. Another cleaning and drying apparatus is also provided with a wafer boat 24 for arranging the wafers at intervals horizontally and carrying the wafers, the drying chamber 23 which accommodate the wafers together with the wafer boat 24 for drying the wafers, dry-gas nozzles 37 for supplying dry gas to the wafers and a moving unit for moving the wafers in relation to the nozzles 37.
摘要翻译：清洁和干燥设备包括用于收集晶片的清洁液的清洁槽22，布置在清洁槽22上方以干燥晶片的干燥室23，位于清洁槽22和干燥室23之间的挡板36，以将它们可联通地开闭机构54，其配置在处理容器的外部，开闭该开闭器36;连接部件58，其穿过形成在该容器的外壁上的开口，将开闭器36与机构54连接;液体密封部机构60用于用密封液密封开口。另一个清洗和干燥装置还设有：晶舟24，其用于水平间隔地布置晶片并且承载晶片;干燥室23，其与用于干燥晶片的晶舟24一起容纳晶片;干燥气体喷嘴37，其用于向晶片供应干燥气体，以及移动单元，用于相对于喷嘴37移动晶片。

82. 发明授权

KR100455904B1 세정처리방법및세정처리장 失效
公开(公告)号：KR100455904B1
公开(公告)日：2005-01-13
申请号：KR1019980037119
申请日：1998-09-09
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 카미카와유지 , 신도나오키 , 키타하라시게노리 , 야마사카미야코
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/08 , B24B37/013 , H01L21/67057 , H01L22/26 , Y10S134/902
摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
摘要翻译：清洁设备通常包括：清洁槽30，用于在其中存储清洁溶液以允许半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洁槽30连接到纯水供应源31的清洁溶液供应管33; 化学品储存容器34，用于在其中储存化学品; 将清洗液供给管33经由注入切断阀35与化学品收容容器34连接的药液供给管36，以及隔膜泵37，用于将来自化学品存储容器34的预定量的化学品注入流过清洁溶液供应管33的纯水中。清洁槽30中的清洁溶液的温度由例如温度传感器基于从温度传感器44输出的检测信号，控制由隔膜泵37注入的化学药品的量，使得化学品的浓度为预定浓度。因此，可以注入预定量的化学制品，以便用预定浓度的化学制品清洁晶片W.

83. 发明公开

KR1020050004226A 처리 장치와 그 방법 및 로봇 장치 有权
公开(公告)号：KR1020050004226A
公开(公告)日：2005-01-12
申请号：KR1020047019046
申请日：1997-10-23
申请人： 시바우라 메카트로닉스 가부시키가이샤
发明人： 미야사코히사아키
IPC分类号： H01L21/304
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67742 , H01L21/67748 , Y10S134/902
摘要： 본 발명은 다수의 처리부를 작은 스페이스로 설치할 수 있도록 한 처리 장치를 제공함에 있다.
상하 2단으로 배치된 다수의 처리부를 가지고, 상단 또는 하단 중 어느 한 쪽의 일단에 위치하는 처리부로부터 미처리된 피처리물을 공급한다. 이 피처리물은 상단 또는 하단 중 어느 한 쪽 처리부에서 처리되고, 이어서 다른 쪽 처리부에서 처리되어 그 다른 쪽의 일단에 위치하는 처리부에서 처리된 후 회수된다.

84. 发明授权

KR100459710B1 웨이퍼 세정 장비 失效
标题翻译： 웨이퍼세정장비
公开(公告)号：KR100459710B1
公开(公告)日：2004-12-04
申请号：KR1020020020470
申请日：2002-04-15
申请人： 삼성전자주식회사
发明人： 여인준 , 윤병문 , 김경현 , 하상록 , 남정림 , 조현호
IPC分类号： H01L21/304
CPC分类号： H01L21/67051 , B08B3/12 , Y10S134/902
摘要： Semiconductor wafer cleaning apparatus comprises: an energy concentration relieving member (200) positioned at a side portion of the wafer (100); a probe (400) extending across at least a portion of the energy concentration relieving member and a portion of the wafer; and a vibrator (500) attached to an end of the probe. An independent claim is also included for a method of cleaning a semiconductor wafer, which comprises: creating a false edge for the wafer; placing a probe over the wafer, such that at least a portion of the probe traverses the wafer; and vibrating the probe to dislodge unwanted debris from the wafer.
摘要翻译：半导体晶片清洁设备包括：位于晶片（100）的侧部的能量浓度缓解构件（200）; 探针（400），延伸穿过能量集中缓解构件的至少一部分和晶片的一部分; 和附接到探针的一端的振动器（500）。对于清洁半导体晶片的方法也包括独立权利要求，其包括：为晶片产生假边缘; 将探针放置在晶片上，使得探针的至少一部分横穿晶片; 并振动探针以从晶片去除不需要的碎屑。

85. 发明公开

KR1020040098526A 박막제거장치 및 박막제거방법 有权
标题翻译：用于消除薄膜以获得薄膜直径的装置和方法，在衬底的基底部分去除表面和控制母体的产生
公开(公告)号：KR1020040098526A
公开(公告)日：2004-11-20
申请号：KR1020040029410
申请日：2004-04-28
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 고바야시신지 , 고가노리히사
IPC分类号： H01L21/30
CPC分类号： H01L21/6708 , Y10S134/902 , Y10T156/1111 , Y10T156/1928 , Y10T156/1989
摘要： PURPOSE: An apparatus for eliminating a thin film is provided to obtain straightness of a thin film removing surface at an angled part of a substrate and control generation of mist by uniformly supplying a solvent from a thin film eliminating unit to an angled part and an edge part of a substrate without varying the supply and absorption states of the solvent while absorbing a melted material. CONSTITUTION: A substrate(M) is placed on a placement unit(22). A sub stage(20) is disposed in a position adjacent to the edge part of the substrate placed on the placement unit while the sub stage has a flat sub part(23) of almost the same plane as the surface of the substrate. A thin film removing unit injects a solvent toward the edge of the substrate placed on the placement unit while absorbing a melted material. A transfer unit(40) transfers the thin film removing unit along the edge of the substrate and the sub stage adjacent to the edge of the substrate.
摘要翻译：目的：提供一种用于消除薄膜的装置，以在基板的倾斜部分处获得薄膜去除表面的平直度，并且通过从薄膜消除单元均匀地将溶剂供应到成角度的部分和边缘来控制雾气的产生在不改变溶剂的供应和吸收状态的同时吸收熔融材料的基板的一部分。构成：将衬底（M）放置在放置单元（22）上。副台（20）设置在与放置单元的基板的边缘部分相邻的位置，而副台具有与基板的表面几乎相同的平面的子部分（23）。薄膜去除单元在吸收熔融材料的同时将溶剂注入放置在放置单元上的基板的边缘。传送单元（40）沿着基板的边缘和与基板的边缘相邻的副台传送薄膜去除单元。

86. 发明授权

KR100433330B1 기판세정방법및기판세정장치 失效
公开(公告)号：KR100433330B1
公开(公告)日：2004-10-20
申请号：KR1019960044985
申请日：1996-10-10
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 가미카와유지 , 신도나오키
IPC分类号： H01L21/304
CPC分类号： H01L21/67057 , Y10S134/902
摘要： The substrate cleaning method for performing cleaning processing on a plurality of substrates disposed such that front surfaces (Wa) of the substrates on which a circuit pattern is to be formed extend substantially in a vertical direction. This method comprises a step (a) of picking up substrates contained in a cassette (C), all together, from the cassette (C), a step (b) of making front surfaces (Wa) of adjacent substrates face each other without bringing the front surfaces (Wa) into contact with each other, while making back surfaces (Wb) of adjacent substrates face each other without bringing the back surfaces (Wb) into contact with each other, the front surfaces (Wa) of the adjacent substrates being situated with a pitch interval L1 interposed therebetween, and the pitch interval being set to be larger than a pitch interval L2 interposed between the back surfaces (Wb) of the adjacent substrates, a step (c) of dipping the plurality of substrates thus disposed, all together, into a chemical solution, and a step (d) of making the chemical solution flow between the front surfaces (Wa) of adjacent substrates of the plurality of substrates, facing each other, and between the back surfaces (Wb) of adjacent substrates of the plurality of substrates, facing each other.
摘要翻译：该基板清洁方法用于对多个基板进行清洁处理，该多个基板设置成使得其上将形成电路图案的基板的前表面（Wa）基本上在垂直方向上延伸。该方法包括从盒子（C）一起拾取盒子（C）中容纳的基底的步骤（a），使相邻基底的前表面（Wa）彼此面对的步骤（b）在使相邻基板的背面（Wb）彼此面对而不使背面（Wb）彼此接触的同时，使正面（Wa）彼此接触，相邻基板的正面（Wa）为以夹着间距L1的方式配置，间距设定得比相邻基板的背面（Wb）之间的间距L2大，将配置的多个基板浸渍的工序（c）（化合物溶液），以及使化学溶液在多个基板的相邻基板的前表面（Wa）彼此面对并在相邻的后表面（Wb）之间流动的步骤（d）的底物多个基板，彼此面对。＆lt;图像＆GT;

87. 发明授权

KR100442744B1 반도체웨이퍼의 화학적 처리방법 失效
标题翻译： 반도체웨이퍼의화학적처리방법
公开(公告)号：KR100442744B1
公开(公告)日：2004-08-02
申请号：KR1020010045184
申请日：2001-07-26
申请人： 실트로닉 아게
发明人： 부룬너로랜드
IPC分类号： H01L21/304
CPC分类号： H01L21/02049 , H01L21/02052 , Y10S134/902
摘要： A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.
摘要翻译：在存在HF并且然后存在臭氧的情况下，特别是用于清洗硅半导体晶片的化学处理半导体晶片的方法是这样的，即用含臭氧的介质处理的半导体晶片不含水溶液 HF。

88. 发明公开

KR1020040033311A ＣＯ2를 사용한 기판 세정 및/또는 처리 방법과 장치 无效
标题翻译：用于使用CO 2进行基材清洁和/或处理的方法和设备
公开(公告)号：KR1020040033311A
公开(公告)日：2004-04-21
申请号：KR1020047003686
申请日：2002-07-30
申请人： 미셀 테크놀로지즈, 인코포레이티드
发明人： 데영제임스피. , 맥클레인제임스피. , 콜마이클이. , 웜스티브엘. , 브라이나드데이비드이.
IPC分类号： H01L21/306
CPC分类号： C23G5/00 , B08B7/0021 , B81C1/00841 , B81C2201/117 , H01L21/02063 , H01L21/67051 , Y10S134/902
摘要： 본 발명의 방법 실시예들에 따르면, 미세 전자 기판 세정 방법은 압력 챔버 안에 기판을 배치하는 단계를 포함한다. 고밀도 상태의 CO
2 를 포함하는 공정 유체가 상기 기판과 접촉하도록 상기 챔버를 통해 상기 공정 유체를 순환시킨다. 상기 공정 유체를 순환시키는 단계의 적어도 일부분 동안 상기 CO
2 의 상태(phase)를 사이클 방식으로 조절한다.

89. 发明公开

KR1020040030253A 계면활성제를 함유하는 공정액 无效
标题翻译：含有表面活性剂的加工溶液，用于在制备半导体器件时减少图案皱纹的缺陷
公开(公告)号：KR1020040030253A
公开(公告)日：2004-04-09
申请号：KR1020030055727
申请日：2003-08-12
申请人： 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
发明人： 장펭 , 킹다니엘메간 , 카르왁키유진조세프쥬니어 , 바버레슬리콕스
IPC分类号： G03F7/32
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： PURPOSE: A processing solution containing a surfactant, a method for reducing the defect in preparation of a semiconductor device by using the processing solution, a process rinsing solution containing a surfactant, and a method for reducing the defect due to pattern collapse in preparation of a semiconductor device or for preventing the collapse of pattern developed on the surface of a plurality of substrates by using the process rinsing solution are provided, to reduce the defect due to pattern collapse after developing by improving the wettability of a processing solution on the surface of a patterned photoresist layer and by reducing the capillary force affecting patterned lines. CONSTITUTION: The processing solution comprises about 10,000 ppm of at least one surfactant represented by the formula I or II, and optionally about 10-10,000 ppm of a dispersant, wherein R1 and R4 are a linear or branched C3-C10 alkyl group; R2 and R3 are H or a C1-C5 alkyl group; and m, n, p and q are a number of 0-20. The process rinsing solution comprises at least one surfactant represented by the formula III, IVa, IVb, V, VI, VII or VIII; and at least one carrier medium selected from the group consisting of an aqueous solvent and a nonaqueous solvent.
摘要翻译：目的：包含表面活性剂的处理溶液，通过使用该处理液减少制备半导体装置的缺陷的方法，含有表面活性剂的处理冲洗液，以及减少由于图案塌陷引起的缺陷的方法提供半导体装置或通过使用工艺冲洗溶液来防止在多个基板的表面上显影的图案的塌陷，以通过提高处理溶液在表面上的润湿性来减少由于显影后的图案塌陷引起的缺陷并且通过减少影响图案线的毛细管力。构成：处理溶液包含约10,000ppm的由式I或II表示的至少一种表面活性剂和任选的约10-10,000ppm的分散剂，其中R 1和R 4是直链或支链C 3 -C 10烷基; R2和R3是H或C1-C5烷基; m，n，p和q为0〜20的数。该工艺冲洗溶液包含至少一种由式III，IVa，IVb，V，VI，VII或VIII表示的表面活性剂; 和至少一种选自水溶剂和非水溶剂的载体介质。

90. 发明授权

KR100406337B1 기판이송및처리시스템 有权
公开(公告)号：KR100406337B1
公开(公告)日：2004-04-03
申请号：KR1019980002510
申请日：1998-01-21
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 가네코사토시 , 가미카와유지 , 고구치아키라 , 구로다오사무 , 기타하라시게노리 , 니시다다츠야
IPC分类号： H01L21/68
CPC分类号： H01L21/67769 , H01L21/67173 , H01L21/67178 , H01L21/67757 , H01L21/67775 , H01L21/67778 , Y10S134/902
摘要： A substrate transporting and processing system generally comprises: a supply section of a carrier 1 for housing therein wafers W to be processed, in a horizontal state; a discharge section of the carrier 1; a wafer unloading arm 14 for unloading the wafers W from said carrier 1; a wafer loading arm 16 for loading the wafers W into the carrier 1; an attitude changing unit 40 for changing the attitude of the wafers W between a horizontal state and a vertical state; a processing section 3 for suitably processing the wafers W; and a wafer transport arm 56 for delivering the wafers W between the attitude changing unit 40 and the processing section 3 and for transporting the wafers W into and from the processing section. Thus, after the wafers W housed in the carrier 1 in the horizontal state are unloaded and the attitude of the wafers W is changed into the vertical state, suitable processes are carried out, and the attitude of the wafers W is changed in the horizontal state after processing, so that the wafers W can be housed in the carrier 1. Thus, it is possible to decrease the size of the whole system to improve the throughput and to improve the yield of products.
摘要翻译：基板搬运处理系统一般包括：载体1的供给部，其以水平状态收纳要处理的晶片W; 载体1的排出部分; 晶片卸载臂14，用于从所述载体1卸载晶片W; 用于将晶片W装载到载体1中的晶片装载臂16; 姿态改变单元40，用于改变晶片W在水平状态和垂直状态之间的姿态; 处理部分3，用于适当处理晶片W; 以及晶片传送臂56，用于在姿态改变单元40和处理部分3之间传送晶片W并用于将晶片W传送到处理部分和从处理部分传送。因此，在将载置在水平状态的载体1中的晶片W卸载并使晶片W的姿态变为垂直状态之后，进行适当的处理，使晶片W的姿势变为水平状态在处理之后，晶片W可以容纳在载体1中。因此，可以减小整个系统的尺寸以提高产量并提高产品的产量。＆lt;图像＆GT;

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