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1. 发明公开

KR1020040030253A 계면활성제를 함유하는 공정액 无效
标题翻译：含有表面活性剂的加工溶液，用于在制备半导体器件时减少图案皱纹的缺陷
公开(公告)号：KR1020040030253A
公开(公告)日：2004-04-09
申请号：KR1020030055727
申请日：2003-08-12
申请人： 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
发明人： 장펭 , 킹다니엘메간 , 카르왁키유진조세프쥬니어 , 바버레슬리콕스
IPC分类号： G03F7/32
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： PURPOSE: A processing solution containing a surfactant, a method for reducing the defect in preparation of a semiconductor device by using the processing solution, a process rinsing solution containing a surfactant, and a method for reducing the defect due to pattern collapse in preparation of a semiconductor device or for preventing the collapse of pattern developed on the surface of a plurality of substrates by using the process rinsing solution are provided, to reduce the defect due to pattern collapse after developing by improving the wettability of a processing solution on the surface of a patterned photoresist layer and by reducing the capillary force affecting patterned lines. CONSTITUTION: The processing solution comprises about 10,000 ppm of at least one surfactant represented by the formula I or II, and optionally about 10-10,000 ppm of a dispersant, wherein R1 and R4 are a linear or branched C3-C10 alkyl group; R2 and R3 are H or a C1-C5 alkyl group; and m, n, p and q are a number of 0-20. The process rinsing solution comprises at least one surfactant represented by the formula III, IVa, IVb, V, VI, VII or VIII; and at least one carrier medium selected from the group consisting of an aqueous solvent and a nonaqueous solvent.
摘要翻译：目的：包含表面活性剂的处理溶液，通过使用该处理液减少制备半导体装置的缺陷的方法，含有表面活性剂的处理冲洗液，以及减少由于图案塌陷引起的缺陷的方法提供半导体装置或通过使用工艺冲洗溶液来防止在多个基板的表面上显影的图案的塌陷，以通过提高处理溶液在表面上的润湿性来减少由于显影后的图案塌陷引起的缺陷并且通过减少影响图案线的毛细管力。构成：处理溶液包含约10,000ppm的由式I或II表示的至少一种表面活性剂和任选的约10-10,000ppm的分散剂，其中R 1和R 4是直链或支链C 3 -C 10烷基; R2和R3是H或C1-C5烷基; m，n，p和q为0〜20的数。该工艺冲洗溶液包含至少一种由式III，IVa，IVb，V，VI，VII或VIII表示的表面活性剂; 和至少一种选自水溶剂和非水溶剂的载体介质。

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