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61. 发明公开

KR1020060006854A 박막 형성 방법 및 박막 형성 장치 失效
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：KR1020060006854A
公开(公告)日：2006-01-19
申请号：KR1020057024820
申请日：2002-03-14
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 야마사키히데아키 , 아리마스스무 , 가와노유미코
IPC分类号： H01L21/205 , C23C16/02 , H01L21/02 , H01L21/44
CPC分类号： H01L28/65 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , C23C16/45523 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/90
摘要： A semiconductor substrate (101) is placed in a predetermined processing vessel, and oxygen gas activated by, e.g., conversion into a plasma is supplied onto an insulating film (108). The surfaces of an interlevel insulating film (106) and insulating film (108) are exposed to the activated oxygen gas. After that, a ruthenium film (109) is formed by CVD.
摘要翻译：将半导体衬底（101）放置在预定的处理容器中，并且通过例如转换成等离子体而激活的氧气被提供到绝缘膜（108）上。层间绝缘膜（106）和绝缘膜（108）的表面暴露于活性氧气。之后，通过CVD形成钌膜（109）。

62. 发明授权

KR100380598B1 콘택트 형성 방법 및 콘택트를 포함하는 장치 失效
标题翻译： 콘택트형성방법및콘택트를포함하는장치
公开(公告)号：KR100380598B1
公开(公告)日：2003-04-18
申请号：KR1020007001745
申请日：1998-08-21
申请人： 마이크론 테크놀로지, 인크.
发明人： 도안,트렁,티. , 샌드후,구테지,사인 , 프레일,킬크,디. , 샤렌,슈지트
IPC分类号： H01L21/285
CPC分类号： H01L21/76843 , C23C16/02 , C23C16/0236 , C23C16/42 , H01L21/28518 , H01L21/28556 , H01L21/76855
摘要： Methods are provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium in the contact. One method includes forming titanium by combining a titanium precursor in the presence of hydrogen, H2. Another method includes forming titanium by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. A further method includes forming titanium by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen.
摘要翻译：提供了通过化学气相沉积（CVD）在集成电路中形成接触的方法。该方法包括在触点中形成钛。一种方法包括在氢气存在下通过组合钛前体来形成钛。另一种方法包括在氢气存在下通过结合四氯化钛TiCl 4形成钛。另一种方法包括在氢气存在下通过结合四甲基二甲基氨基钛，Ti（N（CH 3）2）4来形成钛。

63. 发明公开

KR1020020083767A 선택적 에피택셜 성장 공정에서의 기판 세정 방법 无效
标题翻译：清洁选择性外来生长基质的方法
公开(公告)号：KR1020020083767A
公开(公告)日：2002-11-04
申请号：KR1020010023399
申请日：2001-04-30
申请人： 에스케이하이닉스 주식회사
发明人： 주성재
IPC分类号： H01L21/304
CPC分类号： H01L21/02046 , B08B7/0071 , C23C16/0236 , C30B25/02 , C30B29/22 , C30B33/02 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661 , Y10S134/902 , Y10S438/906
摘要： PURPOSE: A method for cleaning substrate for the selective epitaxial growth(SEG) is provided to lower the temperature without bad influence of device characteristic and protect decline of device characteristic at SEG. CONSTITUTION: A silicon substrate(1) is put on the center of bottom region in a chamber. A hot wire(20) is placed at the upper region apart from the substrate. An influx port for cleansing gas is installed on the one side of the chamber and an exhaust port(12) is installed on the bottom surface of the chamber. The hot wire is heated over 1000 and gases are decomposed to be strongly-reactive atoms near hot wire and diffused toward substrate and thus cleaning response on the substrate is activated even though the temperature of the substrate is lowered.
摘要翻译：目的：提供一种用于清洁选择性外延生长（SEG）的基板的方法，以降低温度，而不影响器件特性，并保护SEG器件特性的下降。构成：将硅衬底（1）放在腔室的底部区域的中心。热线（20）被放置在离基板的上部区域。用于清洁气体的流入口安装在腔室的一侧，排气口（12）安装在腔室的底面上。热丝被加热超过1000，气体被分解成热丝附近的强反应性原子并扩散到衬底，因此即使衬底的温度降低，衬底上的清洁响应被激活。

64. 发明公开

KR1020010092182A 벨트 장착 저온 열화학기상증착장치 및 이를 이용한탄소나노튜브의 합성 방법 失效
标题翻译：制造碳纳米管和带式热电沉积装置的方法
公开(公告)号：KR1020010092182A
公开(公告)日：2001-10-24
申请号：KR1020000014247
申请日：2000-03-21
申请人： 한화나노텍 주식회사 , 이철진
发明人： 이철진 , 유재은
IPC分类号： C23C16/54 , B82Y40/00
CPC分类号： C23C16/54 , B82Y30/00 , C01B32/164 , C23C16/0236 , C23C16/0281 , C23C16/26 , C23C16/4557 , C23C16/45576 , C23C16/46
摘要： PURPOSE: A method for producing carbon nano tube in commercial quantity is provided, which is more economical than conventional methods using quartz tube by employing a belt-type thermochemical deposition apparatus that can produce continuously carbon nano tube. CONSTITUTION: The manufacturing method of carbon nano tube comprises the steps (i) depositing a transition metal thin layer on a substrate(10) to a thickness of 20 to 50nm through thermochemical deposition or sputtering method; (ii) placing the substrate on a grate plate(1) being rotated continuously; (iii) etching the transition metal thin layer formed on the surface of the substrate to induce the growth of grains, wherein ammonia gas/hydrogen gas(80-1000sccm) is introduced to 1st reaction zone of which temperature is controlled within the temperature range of 800 to 850deg.C; (iv) introducing carbonizing gas such as acetylene gas, ethylene gas, propane gas, propane gas or methane gas to 2nd reaction zone controlled in the temperature range of 500 to 550deg.C to form carbon nano tube from the grains, wherein the carbonizing gas is fed into the 2nd reaction zone in an amount of 20 to 1000sccm.
摘要翻译：目的：提供一种商业量生产碳纳米管的方法，比通过采用可连续生产碳纳米管的带式热化学沉积设备使用石英管的常规方法更为经济。构成：碳纳米管的制造方法包括以下步骤：（i）通过热化学沉积或溅射法将过渡金属薄层沉积在基底（10）上至20至50nm的厚度; （ii）将基板放置在连续旋转的格栅板（1）上; （iii）蚀刻形成在基板表面上的过渡金属薄层，以引起晶粒生长，其中将氨气/氢气（80-1000sccm）引入到温度控制在第一反应区的温度范围内 800〜850℃ （iv）在500〜550℃的温度范围内控制的第二反应区中引入乙炔气，乙烯气，丙烷气，丙烷气或甲烷气等碳化气体，从颗粒形成碳纳米管，其中碳化气以20至1000sccm的量进料到第二反应区。

65. 发明授权

KR100276426B1 처리장치 失效
标题翻译： WAFER加工设备
公开(公告)号：KR100276426B1
公开(公告)日：2000-12-15
申请号：KR1019930017677
申请日：1993-09-03
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 다까하시노부아끼
IPC分类号： H01L21/02
CPC分类号： H01L21/67751 , C23C16/0236 , H01L21/67126 , H01L21/67167 , H01L21/6719 , H01L21/67757 , H01L21/68728 , H01L21/68792
摘要： 피처리체, 예를 들면 반도체웨이퍼를 피처리가스 분위기중에서 처리하여 그 표면에 형성된 자연산화막을 제거하는 처리실과, 이 처리실에 피처리체를 유지하는 유지수단, 예를 들면 핀을 세워 형성한 얹어놓는대과, 이 얹어놓는대의 안쪽에 원반체를 형성하고, 얹어놓는대와 이 원반체를 상대적으로 회전시킨다. 이 양자의 상대회전에 의하여 피처리체의 표면과 뒷면에 처리가스의 기류가 발생하여 전체면에 걸쳐서 균일하면서도 동시에 자연산화막의 제거처리가 이루어진다.

66. 发明公开

KR1020000062101A 기판표면의 청정화 방법 및 반도체장치의 제조방법 失效
标题翻译：清洗基板表面的方法和制造半导体器件的方法
公开(公告)号：KR1020000062101A
公开(公告)日：2000-10-25
申请号：KR1019990021100
申请日：1999-06-08
申请人： 캐논 한바이 가부시키가이샤 , 가부시키가이샤 한도타이 프로세스 겐큐쇼
发明人： 치노히로시 , 스즈키세쓰 , 마쓰모토히데야 , 오가와라쇼지
IPC分类号： H01L21/304
CPC分类号： H01L21/02046 , C23C16/0209 , C23C16/0236 , H01L21/02164 , H01L21/02271 , H01L21/02312 , H01L21/02315 , H01L21/31612 , Y10S438/906 , Y10S438/974
摘要： 본발명은산소(O)중에오존(O)을함유하는오존함유가스와테트라에틸오르토실리케이트(TEOS)와를함유하는반응가스를이용하는 CVD(Chemical Vapor Deposition)법에의한, 성막전의피성막면의청정화방법및 반도체장치의제조방법에관한것이다. 기판표면을청정화하는방법은, 오존을함유하는전처리가스(15)를상기기판(11)의표면(12)에쬐어, 상기기판상에존재하는상기파티클들(13)을산화시키며; 파티클(13)의산화물(13a)의분해온도이상에상기기판(11)을가열하여파티클들(13)을제거하는, 단계들로이루어져있다.

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